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MC33502DR2G

Onsemi

MC33502DR2G by Onsemi

MC33502DR2G by Onsemi is a dual operational amplifier with 7000uV max input offset voltage and 75dB CMRR. Ideal for industrial applications, it operates at -40 to 105 °C, has a unity gain bandwidth of 5MHz, and low bias current of 0.01uA.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

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Chip Stock

USA . 18,000 parts In-Stock

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Vyrian

USA . 10,323 parts In-Stock

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Zilex Electronics Inc.

Canada . 1,743 parts In-Stock

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Digiode

USA . 1,690 parts In-Stock

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AZTECH Wire

Italy . 657 parts In-Stock

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$12.070

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657

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QUARKTWIN TECHNOLOGY LTD

USA . 8,647 parts In-Stock

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A-Z Elektronik GmbH

Germany . 7,428 parts In-Stock

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Kulean Microsystems

USA . 6,772 parts In-Stock

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Metaverse IC Inc.

Canada . 6,000 parts In-Stock

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Microchip USA

USA . 4,935 parts In-Stock

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SupplyDigital Components

Austria . 3,241 parts In-Stock

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Problanco Electronics

Mexico . 1,153 parts In-Stock

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Kepictronics

USA . 550 parts In-Stock

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Corohmni

South Africa . 344 parts In-Stock

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Corphita

USA . 318 parts In-Stock

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TANS Electronics

Latvia . 312 parts In-Stock

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UHIMA Technologies

Türkiye . 47 parts In-Stock

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Overview

Enhance your electronic designs with the MC33502DR2G operational amplifier by Onsemi. Designed with precision and reliability in mind, this high-quality component offers exceptional performance for a wide range of applications. Whether you're working on audio amplification, sensor interfaces, or signal conditioning, this amplifier delivers superior functionality and efficiency. Trust Onsemi's expertise and innovation to bring value and benefits to your projects, with the MC33502DR2G leading the way in quality and performance. Elevate your designs today with this top-of-the-line operational amplifier.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and reliability for the operational amplifier, making it suitable for a wide range of applications.

Maximum Input Offset Voltage: 7000 uV

The low input offset voltage ensures accurate and precise signal processing in the operational amplifier.

Surface Mount: YES

The surface mount capability allows for easy and efficient PCB assembly, saving time and effort during production.

Nominal Common Mode Reject Ratio: 75 dB

The high common mode rejection ratio ensures that the amplifier can effectively reject common mode noise, resulting in clean and accurate signal output.

Technology: BIPOLAR

The bipolar technology used in this operational amplifier provides high performance and stability, making it a reliable choice for various electronic applications.

Technical Specifications

Operational Amplifiers (Op Amps) MC33502DR2G attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Onsemi

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

BIPOLAR

Power Supply:

5 V

Total Functions:

2

Sub-Category:

Operational Amplifiers

Frequency Compensation:

Yes

Low-Bias:

Yes

Low-Offset:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

5 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

75 dB

Input Offset Voltage Limit:

7000 uV

Minimum Voltage Gain:

5000

Nominal Slew Rate:

3 V/us

Peak Bias Current:

10 nA

Operational Characteristics

Nominal Supply Voltage:

5 V

Maximum Supply Voltage:

7 V

Minimum Negative Supply Voltage:

0 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

105 °C (221 °F)

Peak Reflow Temperature:

260 °C (500 °F)

Reflow Peak Time Limit:

40 s

Maximum Supply Current:

5 mA

Physical Characteristics

Length:

0.193 in (4.9 mm)

Width:

0.154 in (3.9 mm)

Maximum Seated Height:

0.069 in (1.75 mm)

Total Terminals:

8

Terminal Pitch:

0.05 in (1.27 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Tin

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e3

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

SOP

Package Shape:

Package Style:

Small Outline

Package Equivalence Code:

SOP8,.25

Trade Compliance

MC33502DR2G Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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