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MC33272APG

Onsemi

MC33272APG by Onsemi

MC33272APG by Onsemi is a dual operational amplifier with 1800uV max input offset voltage, 100dB CMRR, and 8V/us min slew rate. Widely used in industrial applications due to its 15V nominal voltage, -40 to 85 °C operating temperature range, and BIPOLAR technology.

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1k+

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Chip Stock

USA . 67,000 parts In-Stock

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AZTECH Wire

Italy . 659 parts In-Stock

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Authorized Procurement Solutions

USA . 10,000 parts In-Stock

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TANS Electronics

Latvia . 8,322 parts In-Stock

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Kulean Microsystems

USA . 3,548 parts In-Stock

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Problanco Electronics

Mexico . 2,578 parts In-Stock

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Corphita

USA . 2,138 parts In-Stock

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SupplyDigital Components

Austria . 1,247 parts In-Stock

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UHIMA Technologies

Türkiye . 688 parts In-Stock

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Microchip USA

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Corohmni

South Africa . 336 parts In-Stock

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Overview

Discover the unmatched performance and reliability of the MC33272APG operational amplifier by Onsemi. Made with high-quality materials and cutting-edge technology, this product offers exceptional precision and efficiency in a wide range of applications. Whether you're designing audio equipment, control systems, or measurement instruments, this op amp delivers unparalleled value, superior functionality, and unbeatable results. Trust Onsemi to provide you with the tools you need to elevate your projects to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides good insulation and durability for the operational amplifier, making it suitable for a wide range of applications.

Maximum Input Offset Voltage: 1800 uV

Low input offset voltage ensures accurate and precise signal processing, making this operational amplifier reliable for various precision applications.

Maximum Average Bias Current (IIB): 0.8 uA

Low bias current helps in minimizing power consumption and ensures stable operation of the operational amplifier in different circuit configurations.

Nominal Common Mode Reject Ratio: 100 dB

High common-mode rejection ratio indicates the operational amplifier's ability to suppress noise and interference from the common-mode signals, resulting in clean output signals.

Nominal Supply Voltage (Vsup): 15 V

Operating at a nominal supply voltage of 15V allows for compatibility with a wide range of power supplies and ensures stable performance of the operational amplifier.

Minimum Slew Rate: 8 V/us

Fast slew rate enables the operational amplifier to respond quickly to input signal changes, making it suitable for applications requiring high-speed signal processing.

Nominal Unity Gain Bandwidth: 5500 kHz

High unity gain bandwidth ensures that the operational amplifier can accurately amplify signals across a wide frequency range, making it versatile for various audio and signal processing applications.

Technical Specifications

Operational Amplifiers (Op Amps) MC33272APG attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Onsemi

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

BIPOLAR

Power Supply:

±1.5/±18/3/36 V

Total Functions:

2

Sub-Category:

Operational Amplifiers

Frequency Compensation:

Yes

Low-Offset:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

5.5 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

100 dB

Input Offset Voltage Limit:

1800 uV

Minimum Voltage Gain:

19950

Minimum Slew Rate:

8 V/us

Nominal Slew Rate:

10 V/us

Peak Bias Current:

800 nA

Maximum Bias Current (IIB) @25 °C:

650 nA

Operational Characteristics

Nominal Supply Voltage:

15 V

Maximum Supply Voltage:

18 V

Maximum Negative Supply Voltage:

-15 V

Minimum Negative Supply Voltage:

-18 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

85 °C (185 °F)

Peak Reflow Temperature:

260 °C (500 °F)

Reflow Peak Time Limit:

40 s

Maximum Supply Current:

6 mA

Physical Characteristics

Length:

0.385 in (9.78 mm)

Width:

0.3 in (7.62 mm)

Maximum Seated Height:

0.175 in (4.45 mm)

Total Terminals:

8

Terminal Pitch:

0.1 in (2.54 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Tin

Package Body Material:

Plastic/Epoxy

Surface Mount:

No

Manufacturing and Reliability

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDIP-T8

JESD-609 Code:

e3

Packaging and Shipping

Packing Method:

Rail

Package Code:

DIP

Package Shape:

Package Style:

In Line

Package Equivalence Code:

DIP8,.3

Trade Compliance

MC33272APG Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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