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MC33204PG

Onsemi

MC33204PG by Onsemi

MC33204PG by Onsemi is a quad operational amplifier with 4 functions, featuring a max input offset voltage of 13000 uV and a nominal common mode reject ratio of 90 dB. With a min slew rate of 0.5 V/us, it is ideal for industrial applications requiring precise signal amplification in temperature-sensitive environments.

Median Price

$0.486

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

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Chip1Stop

Japan . 3 parts In-Stock

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$0.332

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$0.332

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Rochester

USA . 1,336 parts In-Stock

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$0.640

100+ parts

$0.630

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$0.610

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$0.640

$0.630

$0.610

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Arrow

USA . 6,026 parts In-Stock

1+ parts

$0.720

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$0.366

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$0.256

10k+ parts

$0.238

6,026

$0.720

$0.366

$0.256

$0.238

Verical

USA . 6,026 parts In-Stock

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$0.238

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$0.238

Distributors (In-Stock)

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Digiode

USA . 1,313 parts In-Stock

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$0.315

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$0.315

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Chip Stock

USA . 62,000 parts In-Stock

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Vyrian

USA . 13,054 parts In-Stock

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ComSIT Distribution GmbH

Germany . 50 parts In-Stock

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LittleDiode

UK . 8 parts In-Stock

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Corohmni

South Africa . 347 parts In-Stock

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$0.238

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347

$0.238

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Corphita

USA . 868 parts In-Stock

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$0.299

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868

$0.299

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AZTECH Wire

Italy . 181 parts In-Stock

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$14.300

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TANS Electronics

Latvia . 8,392 parts In-Stock

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SupplyDigital Components

Austria . 4,430 parts In-Stock

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Kepictronics

USA . 2,675 parts In-Stock

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Kulean Microsystems

USA . 740 parts In-Stock

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UHIMA Technologies

Türkiye . 433 parts In-Stock

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Problanco Electronics

Mexico . 324 parts In-Stock

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Microchip USA

USA . 324 parts In-Stock

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Overview

Enhance your electronic designs with the MC33204PG operational amplifier by Onsemi. Renowned for its quality and reliability, Onsemi has crafted this versatile component to excel in a variety of applications. From precision instrumentation to audio amplification, this op amp offers unmatched performance and efficiency. With low bias current and high voltage gain, customers can trust in the value and benefits this product brings to their projects. Take your designs to the next level with the MC33204PG and experience the advantages of Onsemi's expertise in operational amplifiers.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is cost-effective and durable, making the product reliable for long-term use.

Maximum Input Offset Voltage: 13000 uV

Low input offset voltage ensures accurate signal processing and minimal errors in the output.

Nominal Common Mode Reject Ratio: 90 dB

High common mode rejection ratio helps in rejecting noise and interference, resulting in a clean output signal.

Nominal Supply Voltage / Vsup (V): 5

Operates at a standard 5V supply voltage, making it compatible with common power sources.

Minimum Slew Rate: 0.5 V/us

Fast slew rate allows for quick response to input signals, essential for dynamic signal processing applications.

Maximum Supply Voltage Limit: 13 V

Can handle higher supply voltages, providing flexibility in different circuit configurations.

Technology: BIPOLAR

Bipolar technology offers low noise performance and high precision, suitable for demanding applications.

Nominal Unity Gain Bandwidth: 2200 kHz

High unity gain bandwidth ensures stable operation at various gain settings, making it versatile for different applications.

Max Operating Temperature: 105 °C

Withstands high temperatures, ideal for industrial environments where heat can be a concern.

Technical Specifications

Operational Amplifiers (Op Amps) MC33204PG attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Onsemi

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

BIPOLAR

Power Supply:

5 V

Total Functions:

4

Sub-Category:

Operational Amplifiers

Frequency Compensation:

Yes

Low-Offset:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

2.2 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

90 dB

Input Offset Voltage Limit:

13000 uV

Minimum Voltage Gain:

25000

Minimum Slew Rate:

0.5 V/us

Nominal Slew Rate:

1 V/us

Peak Bias Current:

250 nA

Maximum Bias Current (IIB) @25 °C:

200 nA

Operational Characteristics

Nominal Supply Voltage:

5 V

Maximum Supply Voltage:

13 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

105 °C (221 °F)

Peak Reflow Temperature:

260 °C (500 °F)

Maximum Supply Current:

4.5 mA

Physical Characteristics

Length:

0.743 in (18.86 mm)

Width:

0.3 in (7.62 mm)

Maximum Seated Height:

0.185 in (4.69 mm)

Total Terminals:

14

Terminal Pitch:

0.1 in (2.54 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Tin

Package Body Material:

Plastic/Epoxy

Surface Mount:

No

Manufacturing and Reliability

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDIP-T14

JESD-609 Code:

e3

Packaging and Shipping

Packing Method:

Rail

Package Code:

DIP

Package Shape:

Package Style:

In Line

Package Equivalence Code:

DIP14,.3

Trade Compliance

MC33204PG Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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