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MC33204DTBR2

Onsemi

MC33204DTBR2 by Onsemi

MC33204DTBR2 by Onsemi is a 4-function Op Amp with 13000uV Max Input Offset Voltage, 0.25uA Max Average Bias Current, and 90dB Nominal CMRR. Ideal for industrial applications requiring high voltage gain, it operates at -40 to 105 °C with a supply voltage of 5V.

Median Price

$2.640

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (In-Stock)

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American Microsemiconductor Inc.

USA . 2,343 parts In-Stock

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$2.640

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Vyrian

USA . 5,757 parts In-Stock

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Chip Stock

USA . 5,700 parts In-Stock

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Digiode

USA . 2,100 parts In-Stock

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Semi Source

USA . 395 parts In-Stock

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395

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Component Sense

UK . 144 parts In-Stock

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Corohmni

South Africa . 341 parts In-Stock

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$2.640

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341

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AZTECH Wire

Italy . 1,051 parts In-Stock

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$10.410

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Kepictronics

USA . 10,000 parts In-Stock

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Problanco Electronics

Mexico . 7,571 parts In-Stock

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A-Z Elektronik GmbH

Germany . 6,245 parts In-Stock

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TANS Electronics

Latvia . 4,497 parts In-Stock

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Microchip USA

USA . 3,224 parts In-Stock

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SupplyDigital Components

Austria . 3,190 parts In-Stock

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Corphita

USA . 2,115 parts In-Stock

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Kulean Microsystems

USA . 1,348 parts In-Stock

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UHIMA Technologies

Türkiye . 185 parts In-Stock

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Overview

Elevate your electronics projects with the MC33204DTBR2 by Onsemi. Crafted with precision and quality, this operational amplifier boasts exceptional performance in a wide range of applications. From audio equipment to industrial machinery, this versatile device offers unparalleled value, delivering reliable and efficient operation. With advanced technology and a compact design, the MC33204DTBR2 is the perfect choice for amplifying signals with precision and clarity. Upgrade your designs today with this top-tier component from Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides good protection for the internal components of the operational amplifier, ensuring durability and reliability in various operating conditions.

Maximum Input Offset Voltage: 13000 uV

Low input offset voltage ensures minimal errors in signal processing, making this operational amplifier suitable for precision applications.

Maximum Average Bias Current (IIB): 0.25 uA

Low bias current helps in reducing power consumption and improves the accuracy of the amplifier's output signal.

Surface Mount: YES

Surface mount capability allows for easy and efficient PCB assembly, saving time and effort during production.

Nominal Common Mode Reject Ratio: 90 dB

High common mode rejection ratio helps in minimizing noise and interference from the input signal, resulting in a clean and accurate output.

Nominal Supply Voltage / Vsup (V): 5

Standard supply voltage of 5V makes this operational amplifier compatible with a wide range of applications and power sources.

Frequency Compensation: YES

Frequency compensation ensures stability and prevents oscillations, making this operational amplifier reliable in dynamic and changing environments.

Minimum Voltage Gain: 25000

High voltage gain amplifies weak input signals effectively, ensuring high signal to noise ratio and accurate signal processing.

Technology: BIPOLAR

Bipolar technology offers low noise performance and high precision, making this operational amplifier suitable for audio and instrumentation applications.

Architecture: VOLTAGE-FEEDBACK

Voltage-feedback architecture provides excellent linearity and stability, ensuring consistent performance over a wide range of operating conditions.

Technical Specifications

Operational Amplifiers (Op Amps) MC33204DTBR2 attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Onsemi

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

BIPOLAR

Power Supply:

5 V

Total Functions:

4

Sub-Category:

Operational Amplifiers

Frequency Compensation:

Yes

Low-Offset:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

2.2 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

90 dB

Input Offset Voltage Limit:

13000 uV

Minimum Voltage Gain:

25000

Minimum Slew Rate:

0.5 V/us

Nominal Slew Rate:

1 V/us

Peak Bias Current:

250 nA

Maximum Bias Current (IIB) @25 °C:

200 nA

Operational Characteristics

Nominal Supply Voltage:

5 V

Maximum Supply Voltage:

13 V

Maximum Negative Supply Voltage:

0 V

Minimum Negative Supply Voltage:

0 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

105 °C (221 °F)

Peak Reflow Temperature:

260 °C (500 °F)

Maximum Supply Current:

4.5 mA

Physical Characteristics

Length:

0.197 in (5 mm)

Width:

0.173 in (4.4 mm)

Maximum Seated Height:

0.047 in (1.2 mm)

Total Terminals:

14

Terminal Pitch:

0.026 in (0.65 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel Palladium Gold

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G14

JESD-609 Code:

e4

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

Package Shape:

Package Style:

Small Outline, Thin Profile, Shrink Pitch

Package Equivalence Code:

TSSOP14,.25

Trade Compliance

MC33204DTBR2 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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