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MC33178DMR2

Onsemi

MC33178DMR2 by Onsemi

MC33178DMR2 by Onsemi is an Op Amp with 4000uV Max Input Offset Voltage, 110dB CMRR, and 1.6mA Max Supply Current. Ideal for industrial applications requiring high voltage gain, low bias current, and micropower operation in a compact package.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

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Chip Stock

USA . 66,000 parts In-Stock

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Vyrian

USA . 2,441 parts In-Stock

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Digiode

USA . 1,802 parts In-Stock

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Nova Conductors

Japan . 50 parts In-Stock

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50

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Ampacity Inc.

Singapore . 1,473 parts In-Stock

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$3.410

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$3.410

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AZTECH Wire

Italy . 792 parts In-Stock

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$6.652

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792

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Argo Parts USA

USA . 4,748 parts In-Stock

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TANS Electronics

Latvia . 4,345 parts In-Stock

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Continental Prestige Electronics

USA . 4,184 parts In-Stock

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Kulean Microsystems

USA . 3,826 parts In-Stock

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SupplyDigital Components

Austria . 1,896 parts In-Stock

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Corphita

USA . 1,015 parts In-Stock

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UHIMA Technologies

Türkiye . 913 parts In-Stock

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Microchip USA

USA . 448 parts In-Stock

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Corohmni

South Africa . 397 parts In-Stock

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Bastille Electronics

Australia . 300 parts In-Stock

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Problanco Electronics

Mexico . 45 parts In-Stock

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Overview

Experience top-notch performance and reliability with the MC33178DMR2 operational amplifier by Onsemi. As a leader in the industry, Onsemi ensures superior quality and precision engineering in all their products. Ideal for a wide range of applications, this op amp offers unmatched value with its low input offset voltage, minimal bias current, and high common mode rejection ratio. Elevate your designs with the MC33178DMR2 and experience the benefits of enhanced signal processing and exceptional stability. Trust Onsemi for quality solutions that exceed expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and reliability for long-term use.

Maximum Input Offset Voltage: 4000 uV

Allows for accurate and precise signal processing.

Surface Mount: YES

Enables easy integration onto PCBs for compact designs.

Nominal Common Mode Reject Ratio: 110 dB

Ensures effective rejection of common mode noise for cleaner output signals.

Nominal Supply Voltage / Vsup (V): 15

Provides stable operating voltage for consistent performance.

Minimum Slew Rate: 1.2 V/us

Allows for fast response to input signal changes.

Frequency Compensation: YES

Ensures stability and prevents oscillations in the circuit.

Minimum Voltage Gain: 25000

Offers high voltage gain for amplification of weak signals.

Technology: BIPOLAR

Suitable for a wide range of applications with low noise and high bandwidth.

Maximum Supply Current: 1.6 mA

Operates efficiently with low power consumption.

Technical Specifications

Operational Amplifiers (Op Amps) MC33178DMR2 attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Onsemi

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

BIPOLAR

Power Supply:

±2.5/±15 V

Total Functions:

2

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

No

Low-Offset:

No

Micropower:

Yes

Wideband:

No

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

3 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

110 dB

Input Offset Voltage Limit:

4000 uV

Minimum Voltage Gain:

25000

Minimum Slew Rate:

1.2 V/us

Nominal Slew Rate:

2 V/us

Peak Bias Current:

600 nA

Maximum Bias Current (IIB) @25 °C:

500 nA

Operational Characteristics

Nominal Supply Voltage:

15 V

Maximum Supply Voltage:

18 V

Maximum Negative Supply Voltage:

-15 V

Minimum Negative Supply Voltage:

-18 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

85 °C (185 °F)

Maximum Supply Current:

1.6 mA

Physical Characteristics

Length:

0.118 in (3 mm)

Width:

0.118 in (3 mm)

Maximum Seated Height:

0.043 in (1.1 mm)

Total Terminals:

8

Terminal Pitch:

0.026 in (0.65 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Tin/Lead

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

S-PDSO-G8

JESD-609 Code:

e0

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

Package Shape:

Package Style:

Small Outline, Thin Profile, Shrink Pitch

Package Equivalence Code:

TSSOP8,.19

Trade Compliance

MC33178DMR2 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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