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MC33174PG

Onsemi

MC33174PG by Onsemi

MC33174PG by Onsemi is a quad operational amplifier with 4 functions. It offers a max input offset voltage of 6500 uV and a min slew rate of 1.6 V/us. Ideal for industrial applications requiring micropower amplification in temperature ranges from -40 to 85 °C.

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1k+

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Chip Stock

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USA . 8,284 parts In-Stock

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AZTECH Wire

Italy . 887 parts In-Stock

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A-Z Elektronik GmbH

Germany . 4,965 parts In-Stock

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Kepictronics

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TANS Electronics

Latvia . 1,565 parts In-Stock

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SupplyDigital Components

Austria . 1,527 parts In-Stock

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UHIMA Technologies

Türkiye . 939 parts In-Stock

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Problanco Electronics

Mexico . 930 parts In-Stock

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Microchip USA

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Corohmni

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Overview

Unleash the power of precision with the MC33174PG operational amplifier by Onsemi. Designed for maximum performance and reliability, this top-of-the-line component is perfect for a wide range of applications in industries such as automotive, industrial, and consumer electronics. With its superior quality and advanced technology, Onsemi ensures that every product delivers unmatched value, efficiency, and accuracy. Elevate your projects to new heights with the MC33174PG and experience the difference that only Onsemi can provide.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is lightweight, durable, and cost-effective, making the product easy to handle and suitable for various applications.

Maximum Input Offset Voltage: 6500 uV

With a low offset voltage, this operational amplifier ensures accurate and precise signal amplification without introducing significant errors.

Nominal Common Mode Reject Ratio: 90 dB

High common mode rejection ratio indicates that the op amp can effectively reject noise and interference from the input signal, resulting in cleaner output signals.

Nominal Supply Voltage / Vsup (V): 15

This nominal supply voltage allows for reliable operation and compatibility with a wide range of systems and circuits.

Minimum Slew Rate: 1.6 V/us

The fast slew rate enables the op amp to respond quickly to changes in input signals, making it suitable for applications that require rapid signal processing.

Nominal Unity Gain Bandwidth: 1800 kHz

With a high unity gain bandwidth, this op amp can maintain stable performance over a wide range of frequencies, making it versatile for various signal processing tasks.

Technology: BIPOLAR

Bipolar technology offers low noise, high input impedance, and good linearity, making this op amp a reliable choice for precision amplification applications.

Technical Specifications

Operational Amplifiers (Op Amps) MC33174PG attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Onsemi

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

BIPOLAR

Power Supply:

5/±15 V

Total Functions:

4

Sub-Category:

Operational Amplifiers

Frequency Compensation:

Yes

Low-Offset:

No

Micropower:

Yes

Performance Specifications

Nominal Unity Gain Bandwidth:

1.8 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

90 dB

Input Offset Voltage Limit:

6500 uV

Minimum Voltage Gain:

25000

Minimum Slew Rate:

1.6 V/us

Nominal Slew Rate:

2.1 V/us

Peak Bias Current:

200 nA

Maximum Bias Current (IIB) @25 °C:

100 nA

Operational Characteristics

Nominal Supply Voltage:

15 V

Maximum Supply Voltage:

22 V

Maximum Negative Supply Voltage:

-15 V

Minimum Negative Supply Voltage:

-22 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

85 °C (185 °F)

Peak Reflow Temperature:

260 °C (500 °F)

Reflow Peak Time Limit:

40 s

Maximum Supply Current:

1.2 mA

Physical Characteristics

Length:

0.743 in (18.86 mm)

Width:

0.3 in (7.62 mm)

Maximum Seated Height:

0.185 in (4.69 mm)

Total Terminals:

14

Terminal Pitch:

0.1 in (2.54 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Tin

Package Body Material:

Plastic/Epoxy

Surface Mount:

No

Manufacturing and Reliability

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDIP-T14

JESD-609 Code:

e3

Packaging and Shipping

Packing Method:

Rail

Package Code:

DIP

Package Shape:

Package Style:

In Line

Package Equivalence Code:

DIP14,.3

Trade Compliance

MC33174PG Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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