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MC33174DTBG

Onsemi

MC33174DTBG by Onsemi

MC33174DTBG by Onsemi is a quad operational amplifier with 4 functions. It has a max input offset voltage of 6500 uV and a min slew rate of 1.6 V/us. Ideal for industrial applications requiring high voltage gain and low bias current, this op amp operates at temperatures ranging from -40 to 85 °C.

Median Price

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Lifecycle Status

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4

In-Stock Inventory

1k+

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Chip Stock

USA . 50,000 parts In-Stock

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Vyrian

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Digiode

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Nova Conductors

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Ampacity Inc.

Singapore . 531 parts In-Stock

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$1.410

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531

$1.410

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Semicontronic

India . 704 parts In-Stock

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$4.410

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$4.300

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$4.278

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704

$4.410

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Aztec Data Supply Inc.

USA . 583 parts In-Stock

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$5.122

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AZTECH Wire

Italy . 754 parts In-Stock

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TANS Electronics

Latvia . 7,476 parts In-Stock

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SupplyDigital Components

Austria . 6,244 parts In-Stock

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Continental Prestige Electronics

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Microchip USA

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Argo Parts USA

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Kulean Microsystems

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Problanco Electronics

Mexico . 2,008 parts In-Stock

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UHIMA Technologies

Türkiye . 972 parts In-Stock

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Corphita

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Bastille Electronics

Australia . 450 parts In-Stock

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South Africa . 122 parts In-Stock

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Overview

Discover the unparalleled quality and reliability of the MC33174DTBG operational amplifier by Onsemi. Designed with cutting-edge technology, this product offers exceptional performance in a wide range of applications. With its compact design and advanced features, this op amp provides customers with unmatched value and benefits. Trust Onsemi to deliver superior products that meet your needs and exceed your expectations. Elevate your projects with the MC33174DTBG and experience the difference today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good protection for internal components and is lightweight, making the product durable and easy to handle.

Maximum Input Offset Voltage: 6500 uV

Low input offset voltage ensures accurate output signal and minimizes errors in the amplifier's performance.

Surface Mount: YES

Allows for easy installation on circuit boards, saving space and reducing assembly time.

Nominal Common Mode Reject Ratio: 90 dB

High common mode rejection ratio helps in rejecting noise and interference, resulting in a clean output signal.

Minimum Slew Rate: 1.6 V/us

High slew rate indicates fast response time, making this Op Amp suitable for applications requiring quick signal processing.

Nominal Unity Gain Bandwidth: 1800 kHz

High unity gain bandwidth ensures stable performance at different gain settings and frequencies.

Technology: BIPOLAR

Bipolar technology offers precise amplification and low noise, making this Op Amp ideal for precision applications.

Technical Specifications

Operational Amplifiers (Op Amps) MC33174DTBG attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Onsemi

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

BIPOLAR

Power Supply:

5/±15 V

Total Functions:

4

Sub-Category:

Operational Amplifiers

Frequency Compensation:

Yes

Low-Offset:

No

Micropower:

Yes

Performance Specifications

Nominal Unity Gain Bandwidth:

1.8 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

90 dB

Input Offset Voltage Limit:

6500 uV

Minimum Voltage Gain:

25000

Minimum Slew Rate:

1.6 V/us

Nominal Slew Rate:

2.1 V/us

Peak Bias Current:

200 nA

Maximum Bias Current (IIB) @25 °C:

100 nA

Operational Characteristics

Nominal Supply Voltage:

15 V

Maximum Supply Voltage:

22 V

Maximum Negative Supply Voltage:

-15 V

Minimum Negative Supply Voltage:

-22 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

85 °C (185 °F)

Peak Reflow Temperature:

260 °C (500 °F)

Reflow Peak Time Limit:

40 s

Maximum Supply Current:

1.2 mA

Physical Characteristics

Length:

0.197 in (5 mm)

Width:

0.173 in (4.4 mm)

Maximum Seated Height:

0.047 in (1.2 mm)

Total Terminals:

14

Terminal Pitch:

0.026 in (0.65 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel/Palladium/Gold

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G14

JESD-609 Code:

e4

Packaging and Shipping

Packing Method:

Rail

Package Code:

Package Shape:

Package Style:

Small Outline, Thin Profile, Shrink Pitch

Package Equivalence Code:

TSSOP14,.25

Trade Compliance

MC33174DTBG Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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