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MC3303PG

Onsemi

MC3303PG by Onsemi

MC3303PG by Onsemi is a quad operational amplifier with 14 terminals. It has a max supply voltage of 36V and operates in industrial temperature range (-40 to 85 °C). With a unity gain bandwidth of 1000 kHz, it is ideal for applications requiring high voltage amplification and precise signal processing.

Median Price

$0.296

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 10 parts In-Stock

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$0.296

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Chip Stock

USA . 25,000 parts In-Stock

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Vyrian

USA . 4,812 parts In-Stock

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Digiode

USA . 1,079 parts In-Stock

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Euro-Tech

UK . 595 parts In-Stock

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595

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Distributors (Availability)

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Continental Prestige Electronics

USA . 6,974 parts In-Stock

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$0.296

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$0.290

6,974

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$0.290

Argo Parts USA

USA . 2,561 parts In-Stock

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$0.296

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$0.287

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Netroflash

USA . 500 parts In-Stock

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$0.296

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$0.290

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$0.296

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Ampacity Inc.

Singapore . 1,441 parts In-Stock

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$3.410

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AZTECH Wire

Italy . 781 parts In-Stock

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$6.946

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Component Stockers USA

USA . 529 parts In-Stock

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$99.990

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Kulean Microsystems

USA . 8,365 parts In-Stock

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Microchip USA

USA . 6,629 parts In-Stock

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TANS Electronics

Latvia . 6,314 parts In-Stock

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Kepictronics

USA . 5,425 parts In-Stock

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SupplyDigital Components

Austria . 3,287 parts In-Stock

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Problanco Electronics

Mexico . 2,841 parts In-Stock

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Corphita

USA . 543 parts In-Stock

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Corohmni

South Africa . 417 parts In-Stock

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UHIMA Technologies

Türkiye . 252 parts In-Stock

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Overview

Enhance your electronic designs with the MC3303PG operational amplifier by Onsemi. Crafted with precision and reliability, this high-quality component offers unparalleled performance in various applications. From audio amplification to signal conditioning, this versatile op amp provides superior functionality and efficiency. Trust in Onsemi's reputation for excellence and elevate your projects with the MC3303PG, delivering value, benefits, and advantages that exceed expectations. Experience innovation at its finest with the MC3303PG by Onsemi.

Feature Benefit Bullets

Package Body Material PLASTIC/EPOXY

Provides durability and protection for the internal components of the operational amplifier.

Maximum Input Offset Voltage 10000 uV

Ensures low offset voltage for accurate signal processing.

Maximum Average Bias Current (IIB) -1 uA

Low bias current helps in minimizing power consumption and signal distortion.

Nominal Common Mode Reject Ratio 90 dB

High common mode rejection ratio indicates good ability to reject noise and interference.

Nominal Supply Voltage / Vsup (V) 14

Ideal supply voltage for optimum performance of the operational amplifier.

Maximum Operating Temperature 85 °C

Wide operating temperature range suitable for various environmental conditions.

Nominal Unity Gain Bandwidth 1000 kHz

High unity gain bandwidth indicates good frequency response for signal amplification.

Amplifier Type OPERATIONAL AMPLIFIER

Designed specifically for amplifying and processing signals accurately and efficiently.

Technical Specifications

Operational Amplifiers (Op Amps) MC3303PG attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Onsemi

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

BIPOLAR

Power Supply:

±1.5/±18/3/36 V

Total Functions:

4

Sub-Category:

Operational Amplifiers

Frequency Compensation:

Yes

Low-Offset:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

1 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

90 dB

Input Offset Voltage Limit:

10000 uV

Minimum Voltage Gain:

10000

Nominal Slew Rate:

0.6 V/us

Peak Bias Current:

-1 uA

Maximum Bias Current (IIB) @25 °C:

500 nA

Operational Characteristics

Nominal Supply Voltage:

14 V

Maximum Supply Voltage:

36 V

Maximum Negative Supply Voltage:

0 V

Minimum Negative Supply Voltage:

0 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

85 °C (185 °F)

Peak Reflow Temperature:

260 °C (500 °F)

Reflow Peak Time Limit:

40 s

Maximum Supply Current:

7 mA

Physical Characteristics

Length:

0.728 in (18.48 mm)

Width:

0.3 in (7.62 mm)

Maximum Seated Height:

0.185 in (4.69 mm)

Total Terminals:

14

Terminal Pitch:

0.1 in (2.54 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Tin

Package Body Material:

Plastic/Epoxy

Surface Mount:

No

Manufacturing and Reliability

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDIP-T14

JESD-609 Code:

e3

Packaging and Shipping

Packing Method:

Rail

Package Code:

DIP

Package Shape:

Package Style:

In Line

Package Equivalence Code:

SOP14,.25

Trade Compliance

MC3303PG Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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