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MBRF30L45CTG

Onsemi

MBRF30L45CTG by Onsemi

MBRF30L45CTG by Onsemi is a Schottky rectifier diode with 2 elements, common cathode configuration, and max output current of 15A. It operates b/w -55 to 150 °C, ideal for efficiency applications. The diode has a max repetitive peak reverse voltage of 45V and can handle non-repetitive peak forward current up to 190A.

Median Price

$0.920

Lifecycle Status

Suppliers In-Stock

12

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 233 parts In-Stock

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$0.398

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233

$0.398

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Chip1Stop

Japan . 233 parts In-Stock

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$0.991

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233

$0.991

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Mouser Electronics

USA . 300 parts In-Stock

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$1.420

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$0.957

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300

$1.420

$0.957

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DigiKey

USA . 98 parts In-Stock

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$2.450

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$1.192

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Verical

USA . 233 parts In-Stock

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$0.398

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233

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Flip Electronics (Authorized)

USA . 210 parts In-Stock

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Rochester

USA . 44 parts In-Stock

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$0.849

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$0.705

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$0.628

44

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$0.849

$0.705

$0.628

Distributors (In-Stock)

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Digiode

USA . 2,424 parts In-Stock

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$0.660

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Vyrian

USA . 7,417 parts In-Stock

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Flip Electronics

USA . 210 parts In-Stock

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Bristol Electronics

USA . 133 parts In-Stock

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$1.125

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Microfarads

USA . 126 parts In-Stock

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Corphita

USA . 1,546 parts In-Stock

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$0.626

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$0.626

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Corohmni

South Africa . 300 parts In-Stock

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$0.695

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$0.695

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Benley Electronics

USA . 7 parts In-Stock

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$1.000

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7

$1.000

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Microchip USA

USA . 2,470 parts In-Stock

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$10.140

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Kepictronics

USA . 10,000 parts In-Stock

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Kulean Microsystems

USA . 7,610 parts In-Stock

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SupplyDigital Components

Austria . 7,380 parts In-Stock

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Problanco Electronics

Mexico . 5,247 parts In-Stock

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TANS Electronics

Latvia . 4,858 parts In-Stock

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Perfect Parts

USA . 3,534 parts In-Stock

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UHIMA Technologies

Türkiye . 249 parts In-Stock

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GreenTree Electronics

Israel . 200 parts In-Stock

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Overview

Discover the Onsemi MBRF30L45CTG, a high-quality, efficient solution in the Diodes & Rectifiers category. With its common cathode configuration and Schottky technology, this rectifier diode offers customers unparalleled performance and reliability. Ideal for applications requiring high efficiency, this product from Onsemi provides a maximum output current of 15A and a maximum repetitive peak reverse voltage of 45V. Trust Onsemi's expertise and innovation to deliver exceptional value and benefits to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used for the package body provides durability and protection for the diode, ensuring a longer lifespan.

Config: COMMON CATHODE, 2 ELEMENTS

Common cathode configuration with 2 elements allows for efficient current flow and better performance in circuit designs.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature of 150 °C, this diode can withstand demanding operating conditions without failure.

Diode Type: RECTIFIER DIODE

Rectifier diodes are designed for converting AC to DC current efficiently, making this product suitable for various power supply applications.

Technology: SCHOTTKY

Schottky diodes have lower forward voltage drop and faster switching times, improving efficiency and reducing power loss in the circuit.

Technical Specifications

Diodes & Rectifiers MBRF30L45CTG attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

LOW POWER LOSS

Application:

EFFICIENCY

Case Connection:

ISOLATED

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

190 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

15 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

45 V

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

MBRF30L45CTG Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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