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MBRF20L80CTG

Onsemi

MBRF20L80CTG by Onsemi

MBRF20L80CTG by Onsemi is a Schottky rectifier diode with 2 elements, common cathode configuration, and max output current of 10A. It operates b/w -20 °C to 150°C, ideal for efficiency applications. The diode has a peak repetitive reverse voltage of 80V and forward voltage of 0.44V, making it suitable for various electronic circuits.

Median Price

$0.647

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 8,295 parts In-Stock

1+ parts

-

100+ parts

$0.647

1k+ parts

$0.537

10k+ parts

$0.479

8,295

-

$0.647

$0.537

$0.479

Avnet

USA . 8,295 parts In-Stock

1+ parts

-

100+ parts

$0.570

1k+ parts

$0.540

10k+ parts

$0.490

8,295

-

$0.570

$0.540

$0.490

Verical

USA . 7,900 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.672

10k+ parts

$0.599

7,900

-

-

$0.672

$0.599

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 887 parts In-Stock

1+ parts

$0.504

100+ parts

-

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-

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887

$0.504

-

-

-

Vyrian

USA . 5,338 parts In-Stock

1+ parts

-

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5,338

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Distributors (Availability)

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Ampacity Inc.

Singapore . 7,824 parts In-Stock

1+ parts

$0.451

100+ parts

-

1k+ parts

-

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7,824

$0.451

-

-

-

Corphita

USA . 821 parts In-Stock

1+ parts

$0.478

100+ parts

-

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-

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-

821

$0.478

-

-

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Corohmni

South Africa . 390 parts In-Stock

1+ parts

$0.531

100+ parts

-

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390

$0.531

-

-

-

Microchip USA

USA . 239 parts In-Stock

1+ parts

$3.315

100+ parts

-

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239

$3.315

-

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AZTECH Wire

Italy . 759 parts In-Stock

1+ parts

$14.600

100+ parts

-

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759

$14.600

-

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Continental Prestige Electronics

USA . 8,295 parts In-Stock

1+ parts

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100+ parts

$0.512

1k+ parts

-

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8,295

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$0.512

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-

Kulean Microsystems

USA . 8,154 parts In-Stock

1+ parts

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8,154

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TANS Electronics

Latvia . 6,466 parts In-Stock

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6,466

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SupplyDigital Components

Austria . 5,462 parts In-Stock

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5,462

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Kepictronics

USA . 3,106 parts In-Stock

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3,106

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Authorized Procurement Solutions

USA . 2,500 parts In-Stock

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2,500

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Problanco Electronics

Mexico . 1,553 parts In-Stock

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1,553

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Perfect Parts

USA . 734 parts In-Stock

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734

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UHIMA Technologies

Türkiye . 531 parts In-Stock

1+ parts

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531

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-

-

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Overview

Experience efficiency like never before with the MBRF20L80CTG by Onsemi. This high-quality diode rectifier offers superior performance, thanks to Onsemi's reputation for excellence in manufacturing. Commonly used for efficiency applications, this product boasts a maximum output current of 10A and a maximum repetitive peak reverse voltage of 80V. With its Schottky technology and low forward voltage, customers can expect reliable and consistent results every time. Upgrade your systems today with the MBRF20L80CTG and experience the benefits of top-notch quality and performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material provides durability and protects the diodes from external elements, ensuring a longer lifespan.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature of 150 °C, this product can withstand elevated temperatures, making it suitable for a wide range of applications.

Diode Type: RECTIFIER DIODE

Rectifier diodes are specifically designed for converting alternating current (AC) to direct current (DC), making this product ideal for efficiency applications.

Maximum Output Current: 10 A

The high maximum output current of 10 A enables this product to handle high power loads efficiently.

Technology: SCHOTTKY

Schottky diodes have lower forward voltage drop and faster switching speeds compared to standard silicon diodes, improving overall efficiency and performance.

Technical Specifications

Diodes & Rectifiers MBRF20L80CTG attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

LOW POWER LOSS

Application:

EFFICIENCY

Case Connection:

ISOLATED

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.44 V

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

175 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-20 Cel

Maximum Output Current:

10 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

80 V

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Trade Compliance

MBRF20L80CTG Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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