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MBR7030WT

Onsemi

MBR7030WT by Onsemi

MBR7030WT by Onsemi is a Schottky rectifier diode with 2 elements, common cathode configuration, and max output current of 35A. It is designed for power applications with a peak repetitive reverse voltage of 30V and operating temperature range from -55 °C to 175°C.

Median Price

$2.969

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 3,760 parts In-Stock

1+ parts

-

100+ parts

$2.800

1k+ parts

$2.510

10k+ parts

$2.360

3,760

-

$2.800

$2.510

$2.360

Verical

USA . 3,760 parts In-Stock

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$3.138

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3,760

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-

$3.138

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Distributors (In-Stock)

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Digiode

USA . 391 parts In-Stock

1+ parts

$2.974

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391

$2.974

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Vyrian

USA . 5,071 parts In-Stock

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Manotoh

Italy . 100 parts In-Stock

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100

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Electronics Depot

USA . 20 parts In-Stock

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20

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ComSIT Distribution GmbH

Germany . 17 parts In-Stock

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Q Components

USA . 14 parts In-Stock

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Distributors (Availability)

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Advanced Electronics

New Zealand . 50 parts In-Stock

1+ parts

$0.038

100+ parts

$0.035

1k+ parts

$0.031

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-

50

$0.038

$0.035

$0.031

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Corphita

USA . 385 parts In-Stock

1+ parts

$2.817

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385

$2.817

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Corohmni

South Africa . 353 parts In-Stock

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$3.130

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$3.130

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AZTECH Wire

Italy . 431 parts In-Stock

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$17.830

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431

$17.830

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Microchip USA

USA . 6,912 parts In-Stock

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$19.565

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Kulean Microsystems

USA . 7,349 parts In-Stock

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SupplyDigital Components

Austria . 4,507 parts In-Stock

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Continental Prestige Electronics

USA . 3,760 parts In-Stock

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$3.010

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3,760

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$3.010

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Problanco Electronics

Mexico . 2,010 parts In-Stock

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TANS Electronics

Latvia . 1,543 parts In-Stock

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UHIMA Technologies

Türkiye . 823 parts In-Stock

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823

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Overview

Discover the power of the MBR7030WT by Onsemi, a top-quality diode & rectifier that offers exceptional performance and reliability. Manufactured by Onsemi, a trusted leader in the industry, this product is designed for power applications with a maximum output current of 35A. With a common cathode configuration and two elements, this diode provides efficient energy conversion while ensuring high durability. Whether you are looking to enhance your power systems or improve overall efficiency, the MBR7030WT delivers unmatched value and benefits for all your needs. Elevate your projects with this cutting-edge technology today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material offers good durability and protection for the diode, making it reliable for long-term use.

Config: COMMON CATHODE, 2 ELEMENTS

Common cathode configuration allows for easier circuit design and integration, while 2 elements provide more flexibility and efficiency in power applications.

Maximum Operating Temperature: 175 °C

With a high maximum operating temperature, this diode can handle demanding power applications without overheating or performance degradation.

Technology: SCHOTTKY

Schottky diodes offer fast switching speeds and low forward voltage drop, improving overall efficiency and performance of the circuit.

Maximum Output Current: 35 A

High maximum output current rating ensures that the diode can effectively handle large power loads without the risk of damage or failure.

Technical Specifications

Diodes & Rectifiers MBR7030WT attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Application:

POWER

Case Connection:

CATHODE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.52 V

JEDEC-95 Code:

TO-247AC

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

Maximum Non Repetitive Peak Forward Current:

500 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

35 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

235

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

30 V

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

MBR7030WT Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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