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MBR7030WTG

Onsemi

MBR7030WTG by Onsemi

MBR7030WTG by Onsemi is a Schottky rectifier diode with 2 elements, common cathode configuration, and max output current of 35A. It operates b/w -55°C to 175°C, ideal for power applications requiring a max forward voltage of 0.52V. The package style is flange mount with matte tin terminal finish.

Median Price

$5.380

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

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Farnell

UK . 279 parts In-Stock

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$2.710

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279

$2.710

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Rochester

USA . 279 parts In-Stock

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$4.660

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$4.170

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$3.920

279

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$3.920

DigiKey

USA . 279 parts In-Stock

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$6.430

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$6.430

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Verical

USA . 205 parts In-Stock

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$6.100

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Digiode

USA . 709 parts In-Stock

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$2.574

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709

$2.574

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Nova Conductors

Japan . 300 parts In-Stock

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$5.679

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300

$5.679

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Bristol Electronics

USA . 30 parts In-Stock

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$9.740

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$4.870

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30

$9.740

$4.870

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Vyrian

USA . 5,504 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 30 parts In-Stock

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Dan-Mar Components

USA . 30 parts In-Stock

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 3,371 parts In-Stock

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$0.140

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3,371

$0.140

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Semicontronic

India . 279 parts In-Stock

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$2.300

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$2.242

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$2.231

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279

$2.300

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$2.231

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Ampacity Inc.

Singapore . 244 parts In-Stock

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$2.300

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244

$2.300

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Corphita

USA . 183 parts In-Stock

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$2.439

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$2.439

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Continental Prestige Electronics

USA . 478 parts In-Stock

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$2.710

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478

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Corohmni

South Africa . 92 parts In-Stock

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$2.710

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Advanced Electronics

New Zealand . 350 parts In-Stock

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$5.144

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$4.887

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$4.887

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350

$5.144

$4.887

$4.887

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Component Stockers USA

USA . 684 parts In-Stock

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$5.520

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$5.190

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684

$5.520

$5.190

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AZTECH Wire

Italy . 677 parts In-Stock

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$13.867

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Microchip USA

USA . 3,638 parts In-Stock

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$14.588

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Lixinc

USA . 15,558 parts In-Stock

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A-Z Elektronik GmbH

Germany . 6,921 parts In-Stock

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Problanco Electronics

Mexico . 5,441 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 3,692 parts In-Stock

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Argo Parts USA

USA . 2,698 parts In-Stock

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Kulean Microsystems

USA . 2,194 parts In-Stock

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TANS Electronics

Latvia . 2,105 parts In-Stock

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Netroflash

USA . 2,000 parts In-Stock

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$5.565

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$5.395

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$5.281

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SupplyDigital Components

Austria . 827 parts In-Stock

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Perfect Parts

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UHIMA Technologies

Türkiye . 216 parts In-Stock

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Kepictronics

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GreenTree Electronics

Israel . 64 parts In-Stock

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Overview

Unlock the power of your devices with the MBR7030WTG diode by Onsemi. Manufactured with precision and expertise, this diode offers superior quality and reliability for a wide range of power applications. With its common cathode configuration and Schottky technology, this diode provides efficient power management with a maximum output current of 35A. Whether you're looking to improve the performance of your electronics or enhance their overall lifespan, the MBR7030WTG is the perfect solution. Trust Onsemi to deliver top-notch products that elevate your technological experience.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diodes, ensuring long-term reliability.

Config: COMMON CATHODE, 2 ELEMENTS

Allows for efficient connection and operation of diodes in a circuit.

Maximum Operating Temperature: 175 °C

Can withstand high temperatures, making it suitable for power applications.

Diode Type: RECTIFIER DIODE

Specifically designed for rectification purposes, ensuring optimal performance.

Maximum Forward Voltage (VF): 0.52 V

Low forward voltage drop minimizes power loss and improves efficiency.

Maximum Output Current: 35 A

Capable of handling high output currents, suitable for power applications.

Technology: SCHOTTKY

Schottky diodes have fast switching speeds and low forward voltage, ideal for power applications.

Maximum Repetitive Peak Reverse Voltage: 30 V

Can handle reverse voltages up to 30V, suitable for various applications.

Maximum Non Repetitive Peak Forward Current: 500 A

Capable of handling high peak currents without damage, ensuring reliability under varying loads.

Technical Specifications

Diodes & Rectifiers MBR7030WTG attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Application:

POWER

Case Connection:

CATHODE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.52 V

JEDEC-95 Code:

TO-247AC

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

500 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

35 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

30 V

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

MBR7030WTG Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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