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MBR2535CTLG

Onsemi

MBR2535CTLG by Onsemi

MBR2535CTLG by Onsemi is a Schottky rectifier diode with common cathode configuration and 35V max reverse voltage. It has a max output current of 12.5A and forward voltage of 0.47V, making it ideal for high-efficiency applications. The diode operates b/w -65°C to 150°C temperature range and features a flange mount package style for easy installation.

Median Price

$1.165

Lifecycle Status

Suppliers In-Stock

18

In-Stock Inventory

1k+

Distributors (Authorized)

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Chip1Stop

Japan . 2 parts In-Stock

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$0.856

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$0.856

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Rochester

USA . 31,492 parts In-Stock

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$1.000

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$0.980

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$0.960

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31,492

$1.000

$0.980

$0.960

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DigiKey

USA . 55 parts In-Stock

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$1.330

100+ parts

$1.144

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$0.986

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$0.973

55

$1.330

$1.144

$0.986

$0.973

Mouser Electronics

USA . 478 parts In-Stock

1+ parts

$3.140

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$1.420

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$1.120

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478

$3.140

$1.420

$1.120

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Verical

USA . 1,300 parts In-Stock

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$0.980

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1,300

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$0.980

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Arrow

USA . 100 parts In-Stock

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$1.443

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$1.002

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100

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$1.443

$1.002

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Distributors (In-Stock)

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Digiode

USA . 227 parts In-Stock

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$0.950

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Nova Conductors

Japan . 550 parts In-Stock

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$1.198

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$1.198

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Forefront Electronics and Design

USA . 100 parts In-Stock

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$1.590

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100

$1.590

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Component Electronics Inc.

Canada . 11 parts In-Stock

1+ parts

$1.920

100+ parts

$1.440

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$1.250

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11

$1.920

$1.440

$1.250

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Vyrian

USA . 3,062 parts In-Stock

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Flip Electronics

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NAC Semi

USA . 850 parts In-Stock

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$1.410

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$1.410

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ComSIT Distribution GmbH

Germany . 600 parts In-Stock

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600

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Bristol Electronics

USA . 372 parts In-Stock

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Flex Direct, LLC

USA . 372 parts In-Stock

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Rebound Electronics

UK . 200 parts In-Stock

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LWI Electronics Inc

India . 10 parts In-Stock

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10

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Aztec Data Supply Inc.

USA . 128 parts In-Stock

1+ parts

$0.192

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128

$0.192

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Ampacity Inc.

Singapore . 366 parts In-Stock

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$0.730

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366

$0.730

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Corphita

USA . 1,941 parts In-Stock

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$0.900

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$0.900

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Corohmni

South Africa . 400 parts In-Stock

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$1.080

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$1.080

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Aranea Global

USA . 2,000 parts In-Stock

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$1.174

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$1.127

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$1.174

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Argo Parts USA

USA . 4,696 parts In-Stock

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$1.198

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Continental Prestige Electronics

USA . 254 parts In-Stock

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$1.174

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Microchip USA

USA . 8,963 parts In-Stock

1+ parts

$15.800

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$15.700

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$15.650

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$15.600

8,963

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$15.600

Perfect Parts

USA . 23,485 parts In-Stock

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Lixinc

USA . 17,536 parts In-Stock

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Kepictronics

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S.R.D Solutions

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TANS Electronics

Latvia . 7,907 parts In-Stock

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Kulean Microsystems

USA . 6,857 parts In-Stock

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Problanco Electronics

Mexico . 5,090 parts In-Stock

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SupplyDigital Components

Austria . 3,885 parts In-Stock

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GreenTree Electronics

Israel . 1,169 parts In-Stock

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Cyclops Electronics Ltd (Excess)

UK . 379 parts In-Stock

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UHIMA Technologies

Türkiye . 137 parts In-Stock

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Overview

Unlock the power of efficiency with the MBR2535CTLG by Onsemi. This high-quality diode offers superior performance and reliability, thanks to its innovative technology and design. Ideal for a wide range of applications, this rectifier diode provides seamless functionality and exceptional value for customers looking to optimize their systems. Trust in Onsemi's expertise and choose the MBR2535CTLG for all your efficiency needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic and epoxy materials are known for their durability and reliability, making this product suitable for long-term use.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this diode can withstand high levels of heat without compromising its performance.

Maximum Output Current: 12.5 A

With a maximum output current of 12.5 A, this diode can handle high levels of electricity, making it suitable for various applications.

Technology: SCHOTTKY

Schottky diodes are known for their low forward voltage drop and fast switching speeds, making this product efficient and reliable.

Maximum Repetitive Peak Reverse Voltage: 35 V

The high maximum repetitive peak reverse voltage of 35 V ensures that this diode can handle reverse voltages without getting damaged.

Technical Specifications

Diodes & Rectifiers MBR2535CTLG attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

LOW POWER LOSS

Application:

EFFICIENCY

Case Connection:

CATHODE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.47 V

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

150 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

12.5 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

35 V

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

MBR2535CTLG Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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