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MBR2515LG

Onsemi

MBR2515LG by Onsemi

The Onsemi MBR2515LG is a Schottky rectifier diode with a max forward voltage of 0.38V and output current of 12.5A. It operates b/w -65 °C to 100°C, ideal for efficiency applications. The diode has a package style of flange mount and features a matte tin terminal finish for cathode connection.

Median Price

$1.315

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 29 parts In-Stock

1+ parts

-

100+ parts

$1.190

1k+ parts

$1.060

10k+ parts

$1.000

29

-

$1.190

$1.060

$1.000

Farnell

UK . 27 parts In-Stock

1+ parts

-

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$1.440

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27

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$1.440

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Distributors (In-Stock)

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Digiode

USA . 523 parts In-Stock

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$1.264

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523

$1.264

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Vyrian

USA . 7,658 parts In-Stock

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IBS Electronics

USA . 1,400 parts In-Stock

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$1.543

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$1.487

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$1.459

1,400

-

$1.543

$1.487

$1.459

NAC Semi

USA . 1,100 parts In-Stock

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-

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$2.200

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$2.000

1,100

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$2.200

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$2.000

LIBRA Elektronik GmbH

Germany . 419 parts In-Stock

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Connector Distribution Corp

USA . 30 parts In-Stock

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Right Parts Inc.

USA . 30 parts In-Stock

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30

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ComSIT Distribution GmbH

Germany . 2 parts In-Stock

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Distributors (Availability)

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Corphita

USA . 1,122 parts In-Stock

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$1.197

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$1.197

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Corohmni

South Africa . 146 parts In-Stock

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$1.330

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146

$1.330

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Component Stockers USA

USA . 2,241 parts In-Stock

1+ parts

$1.520

100+ parts

$1.440

1k+ parts

$1.400

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2,241

$1.520

$1.440

$1.400

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AZTECH Wire

Italy . 474 parts In-Stock

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$21.800

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474

$21.800

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Kepictronics

USA . 15,000 parts In-Stock

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Problanco Electronics

Mexico . 7,211 parts In-Stock

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SupplyDigital Components

Austria . 3,957 parts In-Stock

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TANS Electronics

Latvia . 3,449 parts In-Stock

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Perfect Parts

USA . 2,027 parts In-Stock

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UHIMA Technologies

Türkiye . 651 parts In-Stock

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Kulean Microsystems

USA . 583 parts In-Stock

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Microchip USA

USA . 311 parts In-Stock

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Overview

Discover the exceptional quality and efficiency of the MBR2515LG by Onsemi, a leading manufacturer in the industry. This Schottky rectifier diode offers unmatched performance and reliability, making it ideal for a wide range of applications. With a maximum output current of 12.5A and a low forward voltage of only 0.38V, this diode ensures optimal energy efficiency. Whether you're looking to enhance power supply designs or improve circuit efficiency, the MBR2515LG is the perfect solution. Experience the value and benefits that this high-quality diode brings to your projects today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material ensures durability and protection for the diode, making it a reliable choice for long-term use.

Maximum Operating Temperature: 100 °C

With a high maximum operating temperature of 100 °C, this diode can withstand high temperature environments, increasing its versatility and applicability.

Diode Type: RECTIFIER DIODE

Being a rectifier diode means that this product is specifically designed for converting AC to DC, making it ideal for efficiency applications.

Technology: SCHOTTKY

The Schottky technology used in this diode results in lower forward voltage drop and faster switching speeds, enhancing its performance and efficiency.

Maximum Output Current: 12.5 A

With a high maximum output current of 12.5 A, this diode can handle heavy loads and provide reliable power conversion, suitable for various industrial and commercial applications.

Technical Specifications

Diodes & Rectifiers MBR2515LG attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

LOW POWER LOSS

Application:

EFFICIENCY

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.38 V

JEDEC-95 Code:

TO-220AC

JESD-30 Code:

R-PSFM-T2

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

150 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

100 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

12.5 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

15 V

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

MBR2515LG Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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