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MAX809SQ120T1G

Onsemi

MAX809SQ120T1G by Onsemi

MAX809SQ120T1G by Onsemi is a Power Management IC with 3.3V nominal voltage, 1/5.5V power supplies range, and -40 to 105°C operating temperature. It is used in industrial applications for power supply support circuits due to its small outline package and CMOS technology.

Median Price

$0.263

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 21 parts In-Stock

1+ parts

$0.263

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21

$0.263

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Vyrian

USA . 4,652 parts In-Stock

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4,652

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Digiode

USA . 2,478 parts In-Stock

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2,478

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 316 parts In-Stock

1+ parts

$0.257

100+ parts

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316

$0.257

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Continental Prestige Electronics

USA . 2,307 parts In-Stock

1+ parts

$0.263

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$0.257

2,307

$0.263

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$0.257

Argo Parts USA

USA . 2,289 parts In-Stock

1+ parts

$0.263

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$0.255

2,289

$0.263

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$0.255

Netroflash

USA . 100 parts In-Stock

1+ parts

$0.263

100+ parts

$0.257

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100

$0.263

$0.257

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Semicontronic

India . 351 parts In-Stock

1+ parts

$4.500

100+ parts

$4.388

1k+ parts

$4.365

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351

$4.500

$4.388

$4.365

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Ampacity Inc.

Singapore . 1,152 parts In-Stock

1+ parts

$5.500

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1,152

$5.500

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AZTECH Wire

Italy . 280 parts In-Stock

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$11.700

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280

$11.700

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Aztec Data Supply Inc.

USA . 1,185 parts In-Stock

1+ parts

$20.870

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$20.870

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Kulean Microsystems

USA . 8,295 parts In-Stock

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8,295

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SupplyDigital Components

Austria . 5,534 parts In-Stock

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5,534

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Problanco Electronics

Mexico . 4,793 parts In-Stock

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4,793

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TANS Electronics

Latvia . 3,678 parts In-Stock

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3,678

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Corphita

USA . 2,412 parts In-Stock

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2,412

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UHIMA Technologies

Türkiye . 894 parts In-Stock

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894

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Microchip USA

USA . 433 parts In-Stock

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433

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Overview

Discover the power of the MAX809SQ120T1G by Onsemi, a top-quality Power Management IC that offers unparalleled performance and reliability. Manufactured by Onsemi, a trusted leader in the industry, this product is perfect for a wide range of applications. With a small outline and very thin profile, this IC is ideal for industrial use and operates flawlessly in temperatures ranging from -40°C to 105°C. Don't compromise on quality - choose Onsemi's MAX809SQ120T1G for your power supply support circuit needs and experience the difference in performance and efficiency.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the internal components of the Power Management IC, ensuring longevity and reliability.

Surface Mount: YES

The surface mount capability allows for easy and efficient assembly onto circuit boards, making it ideal for mass production and integration into various electronic devices.

Nominal Supply Voltage (Vsup): 3.3 V

The nominal supply voltage of 3.3V is a common standard in many electronic systems, ensuring compatibility and ease of integration with existing components.

Maximum Operating Temperature: 105 °C

The high maximum operating temperature of 105°C indicates that this Power Management IC can withstand elevated temperatures without compromising its performance or reliability.

Technology: CMOS

The CMOS technology used in this IC offers low power consumption and high noise immunity, making it energy-efficient and reliable for various power management applications.

Technical Specifications

Power Management ICs MAX809SQ120T1G attributes and parameters. Explore more Power Management ICs devices from Onsemi

Specs

Additional Features:

RESET THRESHOLD VOLTAGE IS 1.2V

Adjustable Threshold:

NO

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Length:

2.1 mm

Moisture Sensitivity Level (MSL):

1

No. of Channels:

1

No. of Functions:

1

No. of Terminals:

3

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SOT-323

Package Shape:

Package Style (Meter):

SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH

Peak Reflow Temperature (C):

260

Power Supplies (V):

1/5.5

Qualification:

Not Qualified

Maximum Seated Height:

1 mm

Sub-Category:

Power Management Circuits

Maximum Supply Current (Isup):

.0025 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.2 V

Nominal Supply Voltage (Vsup):

3.3 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Nominal Threshold Voltage (V):

+1.2V

Maximum Time At Peak Reflow Temperature (s):

30

Width (mm):

1.24 mm

Trade Compliance

MAX809SQ120T1G Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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