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MAX708RCUA-TG

Onsemi

MAX708RCUA-TG by Onsemi

MAX708RCUA-TG by Onsemi is a Power Management IC with 8 terminals, operating b/w -40 to 85 °C. It has a Nominal Voltage of 3.3V and supports Power Supplies at 1.2/5V. This IC is ideal for industrial applications requiring power supply support circuits in a small outline package style.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 2,476 parts In-Stock

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Digiode

USA . 865 parts In-Stock

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865

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Advanced Electronics

New Zealand . 100 parts In-Stock

1+ parts

$12.954

100+ parts

$11.788

1k+ parts

$10.622

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100

$12.954

$11.788

$10.622

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AZTECH Wire

Italy . 434 parts In-Stock

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$19.760

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434

$19.760

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QUARKTWIN TECHNOLOGY LTD

USA . 11,215 parts In-Stock

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Authorized Procurement Solutions

USA . 10,000 parts In-Stock

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SupplyDigital Components

Austria . 6,843 parts In-Stock

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Microchip USA

USA . 4,702 parts In-Stock

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Kepictronics

USA . 4,000 parts In-Stock

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TANS Electronics

Latvia . 2,511 parts In-Stock

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RC Electronics

USA . 1,000 parts In-Stock

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UHIMA Technologies

Türkiye . 781 parts In-Stock

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Kulean Microsystems

USA . 702 parts In-Stock

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Corohmni

South Africa . 486 parts In-Stock

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Problanco Electronics

Mexico . 81 parts In-Stock

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Corphita

USA . 74 parts In-Stock

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Overview

Discover the power of reliable performance with the MAX708RCUA-TG by Onsemi. As a trusted manufacturer in the industry of Power Management ICs, Onsemi is committed to delivering top-notch quality products that exceed expectations. This small outline, thin profile IC offers a wide range of applications and is suitable for industrial-grade settings. With a nominal supply voltage of 3.3V, this power supply support circuit provides customers with the ultimate peace of mind. Experience the superior benefits and value that the MAX708RCUA-TG brings to your projects today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is lightweight and durable, making the product suitable for various applications while ensuring reliability.

Surface Mount: YES

This feature allows for easy and convenient installation on PCBs, saving space and facilitating automated assembly processes.

Nominal Supply Voltage (Vsup): 3.3 V

The standardized voltage level ensures compatibility with a wide range of devices and power sources.

No. of Terminals: 8

Having a sufficient number of terminals allows for versatile connections and potential configurations in power management setups.

Maximum Operating Temperature: 85 °C

The high operating temperature range ensures reliable performance even in challenging environments or under heavy load conditions.

Minimum Operating Temperature: -40 °C

The ability to function in low-temperature conditions expands the product's usability in various climates or industrial settings.

Terminal Finish: MATTE TIN

The matte tin finish provides good solderability and corrosion resistance, ensuring secure connections and long-term reliability.

Minimum Supply Voltage (Vsup): 1 V

The low minimum supply voltage requirement enables efficient power management in systems with varying power sources or limited energy capacity.

Temperature Grade: INDUSTRIAL

The industrial-grade temperature rating ensures the product's performance and durability in harsh operating conditions typically found in industrial environments.

Maximum Supply Current (Isup): 0.028 mA

The low supply current requirement helps in reducing power consumption and heat generation, contributing to energy efficiency and prolonged device lifespan.

Technical Specifications

Power Management ICs MAX708RCUA-TG attributes and parameters. Explore more Power Management ICs devices from Onsemi

Specs

Adjustable Threshold:

NO

JESD-30 Code:

S-PDSO-G8

JESD-609 Code:

e3

Length:

3 mm

Moisture Sensitivity Level (MSL):

1

No. of Channels:

1

No. of Functions:

1

No. of Terminals:

8

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP8,.19

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Peak Reflow Temperature (C):

260

Power Supplies (V):

1.2/5

Qualification:

Not Qualified

Maximum Seated Height:

1.1 mm

Sub-Category:

Power Management Circuits

Maximum Supply Current (Isup):

.028 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1 V

Nominal Supply Voltage (Vsup):

3.3 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Nominal Threshold Voltage (V):

+2.63V

Maximum Time At Peak Reflow Temperature (s):

30

Width (mm):

3 mm

Trade Compliance

MAX708RCUA-TG Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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