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LV47009P

Onsemi

LV47009P by Onsemi

LV47009P by Onsemi is a video amplifier with 25 terminals, offering 41W nominal output power and 26dB gain. With a harmonic distortion of 0.03%, it operates in industrial temperature grades from -40 to 85 °C. Ideal for audio and video applications requiring high-quality signal amplification.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 2,149 parts In-Stock

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Digiode

USA . 883 parts In-Stock

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883

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TANS Electronics

Latvia . 6,904 parts In-Stock

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Kulean Microsystems

USA . 6,315 parts In-Stock

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SupplyDigital Components

Austria . 3,329 parts In-Stock

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Problanco Electronics

Mexico . 3,132 parts In-Stock

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Corphita

USA . 901 parts In-Stock

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Corohmni

South Africa . 364 parts In-Stock

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UHIMA Technologies

Türkiye . 135 parts In-Stock

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Overview

Enhance your audio and video experience with the LV47009P by Onsemi, a top-quality video amplifier designed to deliver crystal-clear sound and sharp visuals. As a trusted manufacturer in the industry, Onsemi ensures reliable performance and durability in all their products. Ideal for a wide range of applications, this amplifier offers unmatched value and benefits to customers looking for high-quality audio and video solutions. Upgrade your entertainment system today with the LV47009P and enjoy immersive sound and vibrant images like never before.

Feature Benefit Bullets

Package Shape: RECTANGULAR

The rectangular shape of the package allows for easy mounting and integration into a variety of devices and systems.

General IC Type: VIDEO AMPLIFIER

Being a video amplifier specifically designed for video applications, it ensures high-quality and distortion-free video signal amplification.

Harmonic Distortion: 0.03%

With low harmonic distortion of only 0.03%, this amplifier delivers clear and accurate amplification without introducing unwanted noise or distortion.

No. of Terminals: 25

The ample number of terminals allows for easy connectivity and integration with other components and systems.

Package Style (Meter): FLANGE MOUNT

The flange mount package style provides stability and ease of mounting in various applications and environments.

Maximum Operating Temperature: 85 °C

The high maximum operating temperature of 85 °C ensures reliable performance even in demanding environments.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature of -40 °C allows for operation in a wide range of temperature conditions.

Terminal Position: ZIG-ZAG

The zig-zag terminal position offers efficient PCB layout and routing, resulting in better signal integrity and performance.

Nominal Output Power: 41 W

With a nominal output power of 41 watts, this amplifier can deliver sufficient power for various audio and video applications.

Minimum Supply Voltage (Vsup): 8 V

The low minimum supply voltage requirement of 8 volts enables operation in low-power scenarios and helps in conserving energy.

Temperature Grade: INDUSTRIAL

Designed for industrial applications, this amplifier can withstand harsh operating conditions and ensure long-term reliability.

Nominal Bandwidth: 0.02 kHz

With a nominal bandwidth of 0.02 kHz, this amplifier can accurately reproduce high-frequency signals with clarity and fidelity.

Terminal Form: THROUGH-HOLE

The through-hole terminal form simplifies the soldering and assembly process, making installation and maintenance easier.

Gain: 26 dB

The gain of 26 dB ensures adequate signal amplification for high-fidelity audio and video reproduction.

Maximum Supply Voltage (Vsup): 16 V

The high maximum supply voltage of 16 volts allows for flexibility in powering the amplifier and ensures compatibility with a wide range of power sources.

Technical Specifications

Audio & Video Amplifiers LV47009P attributes and parameters. Explore more Audio & Video Amplifiers devices from Onsemi

Specs

Nominal Bandwidth:

.02 kHz

General IC Type:

Gain:

26 dB

Harmonic Distortion:

.03 %

JESD-30 Code:

R-XZFM-T25

No. of Channels:

1

No. of Functions:

1

No. of Terminals:

25

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Nominal Output Power:

41 W

Package Body Material:

UNSPECIFIED

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Qualification:

Not Qualified

Maximum Supply Voltage (Vsup):

16 V

Minimum Supply Voltage (Vsup):

8 V

Surface Mount:

NO

Temperature Grade:

Terminal Form:

Terminal Position:

ZIG-ZAG

Trade Compliance

LV47009P General Purpose ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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