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LM2904ADMR2

Onsemi

LM2904ADMR2 by Onsemi

LM2904ADMR2 by Onsemi is a dual operational amplifier with 7000uV max input offset voltage and 70dB nominal CMRR. It operates at -40 to 105 °C, with Vsup of +-1.5/+-13/3/26 V, making it ideal for industrial applications requiring high voltage gain and low bias current. The package is small outline, thin profile, with gull wing terminals for surface mount assembly.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

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Chip Stock

USA . 25,000 parts In-Stock

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Vyrian

USA . 6,785 parts In-Stock

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Digiode

USA . 1,210 parts In-Stock

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Nova Conductors

Japan . 500 parts In-Stock

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Ampacity Inc.

Singapore . 1,016 parts In-Stock

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$6.410

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AZTECH Wire

Italy . 763 parts In-Stock

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$19.515

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Kulean Microsystems

USA . 6,859 parts In-Stock

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Problanco Electronics

Mexico . 5,431 parts In-Stock

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TANS Electronics

Latvia . 4,020 parts In-Stock

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Corphita

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SupplyDigital Components

Austria . 520 parts In-Stock

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UHIMA Technologies

Türkiye . 508 parts In-Stock

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Corohmni

South Africa . 485 parts In-Stock

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Microchip USA

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Aranea Global

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Overview

Enhance your electronic designs with the LM2904ADMR2 operational amplifier by Onsemi. With a commitment to quality, Onsemi delivers reliable components that excel in various applications. This versatile op amp offers customers value with its high performance and precision. Whether you're designing audio equipment, signal processing circuits, or control systems, the LM2904ADMR2 provides the efficiency and accuracy you need for your projects. Trust Onsemi's expertise and choose the LM2904ADMR2 for your next design challenge.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides durability and resistance to environmental factors, making the product suitable for various operating conditions.

Maximum Input Offset Voltage: 7000 uV

Low input offset voltage ensures accurate and precise signal processing, making the product ideal for applications requiring high precision.

Maximum Average Bias Current (IIB): -0.25 uA

Low average bias current ensures minimal power consumption and improved efficiency of the product.

Surface Mount: YES

Surface mount design allows for easy and convenient installation on PCBs, saving space and reducing assembly time.

Nominal Common Mode Reject Ratio: 70 dB

High common mode reject ratio ensures effective rejection of common-mode signals, resulting in cleaner output signals.

Nominal Supply Voltage / Vsup (V): 5

Nominal supply voltage of 5V makes the product compatible with a wide range of systems and power sources.

No. of Terminals: 8

8 terminals provide versatile connectivity options and allow for easy integration into circuit designs.

Maximum Operating Temperature: 105 °C

High operating temperature range allows the product to function reliably in harsh environmental conditions.

Frequency Compensation: YES

Frequency compensation ensures stability and accuracy in frequency response, making the product suitable for applications requiring precise signal processing.

Amplifier Type: OPERATIONAL AMPLIFIER

Operational amplifier design provides high gain and low noise operation, making the product ideal for amplification and signal conditioning applications.

Technical Specifications

Operational Amplifiers (Op Amps) LM2904ADMR2 attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Onsemi

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

BIPOLAR

Power Supply:

±1.5/±13/3/26 V

Total Functions:

2

Sub-Category:

Operational Amplifiers

Frequency Compensation:

Yes

Low-Offset:

No

Performance Specifications

Nominal Common Mode Rejection Ratio (CMRR ):

70 dB

Input Offset Voltage Limit:

7000 uV

Minimum Voltage Gain:

15000

Peak Bias Current:

-250 nA

Maximum Bias Current (IIB) @25 °C:

100 nA

Operational Characteristics

Nominal Supply Voltage:

5 V

Maximum Supply Voltage:

32 V

Maximum Negative Supply Voltage:

0 V

Minimum Negative Supply Voltage:

0 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

105 °C (221 °F)

Peak Reflow Temperature:

235 °C (455 °F)

Reflow Peak Time Limit:

30 s

Maximum Supply Current:

3 mA

Physical Characteristics

Length:

0.118 in (3 mm)

Width:

0.118 in (3 mm)

Maximum Seated Height:

0.043 in (1.1 mm)

Total Terminals:

8

Terminal Pitch:

0.026 in (0.65 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Tin/Lead

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

S-PDSO-G8

JESD-609 Code:

e0

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

Package Shape:

Package Style:

Small Outline, Thin Profile, Shrink Pitch

Package Equivalence Code:

TSSOP8,.19

Trade Compliance

LM2904ADMR2 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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