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FQL40N50F

Onsemi

FQL40N50F by Onsemi

FQL40N50F by Onsemi is a N-CHANNEL Power FET with 500V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 160A and EAS of 1800mJ, with 0.11 ohm RDS(ON). Operating in ENHANCEMENT MODE, it has a max power dissipation of 460W at 150°C.

Median Price

$7.310

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 99 parts In-Stock

1+ parts

$6.020

100+ parts

$5.660

1k+ parts

$5.120

10k+ parts

-

99

$6.020

$5.660

$5.120

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Mouser Electronics

USA . 115 parts In-Stock

1+ parts

$9.920

100+ parts

$7.090

1k+ parts

$6.240

10k+ parts

$5.150

115

$9.920

$7.090

$6.240

$5.150

DigiKey

USA . 375 parts In-Stock

1+ parts

-

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1k+ parts

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375

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Flip Electronics (Authorized)

USA . 375 parts In-Stock

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375

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Farnell

UK . 99 parts In-Stock

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-

100+ parts

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$7.546

10k+ parts

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99

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$7.546

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Verical

USA . 99 parts In-Stock

1+ parts

-

100+ parts

$7.075

1k+ parts

$6.400

10k+ parts

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99

-

$7.075

$6.400

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,079 parts In-Stock

1+ parts

$5.719

100+ parts

-

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3,079

$5.719

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Vyrian

USA . 2,530 parts In-Stock

1+ parts

$6.020

100+ parts

-

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2,530

$6.020

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Flip Electronics

USA . 375 parts In-Stock

1+ parts

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1k+ parts

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375

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 1,237 parts In-Stock

1+ parts

$5.418

100+ parts

-

1k+ parts

-

10k+ parts

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1,237

$5.418

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Corohmni

South Africa . 214 parts In-Stock

1+ parts

$6.020

100+ parts

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214

$6.020

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Component Stockers USA

USA . 76 parts In-Stock

1+ parts

$6.070

100+ parts

-

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76

$6.070

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Native Components

USA . 308 parts In-Stock

1+ parts

$6.310

100+ parts

-

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308

$6.310

-

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Microchip USA

USA . 461 parts In-Stock

1+ parts

$14.490

100+ parts

$14.380

1k+ parts

$14.380

10k+ parts

$14.280

461

$14.490

$14.380

$14.380

$14.280

A-Z Elektronik GmbH

Germany . 8,453 parts In-Stock

1+ parts

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8,453

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RC Electronics

USA . 8,100 parts In-Stock

1+ parts

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100+ parts

$6.000

1k+ parts

$5.660

10k+ parts

$5.540

8,100

-

$6.000

$5.660

$5.540

TANS Electronics

Latvia . 4,124 parts In-Stock

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SupplyDigital Components

Austria . 3,926 parts In-Stock

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3,926

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Kulean Microsystems

USA . 2,792 parts In-Stock

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2,792

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Authorized Procurement Solutions

USA . 2,000 parts In-Stock

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2,000

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Alle Elektronik GmbH

Germany . 1,735 parts In-Stock

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1,735

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Northwest PG Solutions

USA . 1,289 parts In-Stock

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$6.184

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1,289

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$6.184

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Problanco Electronics

Mexico . 1,226 parts In-Stock

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1,226

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UHIMA Technologies

Türkiye . 864 parts In-Stock

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864

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Perfect Parts

USA . 786 parts In-Stock

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786

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Kepictronics

USA . 375 parts In-Stock

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375

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Supply Digital

USA . 120 parts In-Stock

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120

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Continental Prestige Electronics

USA . 99 parts In-Stock

1+ parts

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100+ parts

$5.820

1k+ parts

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99

-

$5.820

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Overview

Upgrade your power management system with the FQL40N50F by Onsemi. This high-quality N-channel Power FET offers reliable switching performance, making it ideal for a variety of applications. With a maximum drain current of 40A and a breakdown voltage of 500V, this transistor is designed to handle high-power loads with ease. Trust in Onsemi's reputation for excellence in semiconductor technology and experience the value and efficiency that the FQL40N50F brings to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good protection and insulation for the transistor, ensuring durability and reliability.

Polarity or Channel Type: N-CHANNEL

N-channel FETs typically have lower on-resistance and faster switching speeds compared to P-channel FETs, making them suitable for high-performance applications.

Minimum DS Breakdown Voltage: 500 V

With a high breakdown voltage, this FET can be used in high voltage applications without risk of damage.

Transistor Application: SWITCHING

Designed specifically for switching applications, this FET is optimized for fast and efficient switching operation.

Maximum Power Dissipation (Abs): 460 W

With high power dissipation capabilities, this FET can handle significant power levels without overheating.

Maximum Operating Temperature: 150 °C

The FET can operate at high temperatures, making it suitable for applications where heat dissipation is a concern.

Technical Specifications

Power Field Effect Transistors (FET) FQL40N50F attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Onsemi

Specs

Avalanche Energy Rating (EAS):

1800 mJ

Minimum DS Breakdown Voltage:

500 V

Maximum Drain Current (Abs) (ID):

40 A

Maximum Drain Current (ID):

40 A

Maximum Drain-Source On Resistance:

.11 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-264AA

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

160 A

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

FQL40N50F Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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