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FODM3062R2V

Onsemi

FODM3062R2V by Onsemi

FODM3062R2V by Onsemi is a single TRIAC output optocoupler with a max on-state voltage of 3V and forward current of 0.06A. It operates b/w -40 °C to 100°C, has an isolation voltage of 3750V, and is ideal for optocoupler trigger device outputs in various applications.

Median Price

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Lifecycle Status

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2

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1k+

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Digiode

USA . 2,466 parts In-Stock

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Native Components

USA . 395 parts In-Stock

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Northwest PG Solutions

USA . 1,660 parts In-Stock

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TANS Electronics

Latvia . 6,570 parts In-Stock

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Kulean Microsystems

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SupplyDigital Components

Austria . 2,155 parts In-Stock

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Supply Digital

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Corphita

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Problanco Electronics

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Corohmni

South Africa . 416 parts In-Stock

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UHIMA Technologies

Türkiye . 88 parts In-Stock

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Overview

Upgrade your electronics with the FODM3062R2V by Onsemi, a top-tier Optocoupler Trigger Device Output that offers unparalleled quality and reliability. Manufactured by industry leader Onsemi, this product is designed to meet the highest standards for performance and durability. Ideal for a wide range of applications, this optoelectronic device provides seamless integration and superior functionality. Experience the value and benefits of the FODM3062R2V, from its high isolation voltage to its efficient operation temperature range. Trust Onsemi to deliver cutting-edge technology that exceeds expectations.

Feature Benefit Bullets

Maximum On State Voltage: 3 V

Low voltage requirement makes it compatible with a wide range of systems and applications.

Configuration: SINGLE

Simplified setup and operation with a single configuration option.

Maximum Forward Current: 0.06 A

Able to handle moderate current loads effectively.

Optoelectronic Type: TRIAC OUTPUT OPTOCOUPLER

Specifically designed for applications requiring a TRIAC output optocoupler.

Maximum Operating Temperature: 100 °C

Can operate reliably even in high-temperature environments.

Minimum Operating Temperature: -40 °C

Can operate in extreme cold conditions without issues.

Maximum Input Trigger Current: 0.01 A

Efficiently triggered with low input current.

Repetitive Off-state Voltage (Peak): 600 V

Can handle high off-state voltage spikes repeatedly.

Packing Method: TR

Compact and easy to handle packaging for convenience in storage and installation.

Maximum Reverse Leakage Current: 0.0001 A

Minimal leakage current ensures efficient performance.

Minimum Peak Off-state Voltage: 600 V

High off-state voltage tolerance for enhanced safety and reliability.

Maximum Isolation Voltage: 3750 V

Provides high level of isolation for added protection in circuits.

Mounting Feature: SURFACE MOUNT

Easy to mount on surfaces for quick and secure installation.

Maximum On State Current: 0.07 A

Capable of handling peak current without issues.

Technical Specifications

Optocoupler Trigger Device Outputs FODM3062R2V attributes and parameters. Explore more Optocoupler Trigger Device Outputs devices from Onsemi

Specs

Additional Features:

UL APPROVED, VDE APPROVED

Configuration:

SINGLE

Maximum Forward Current:

.06 A

Maximum Input Trigger Current:

.01 A

Maximum Isolation Voltage:

3750 V

Mounting Feature:

No. of Elements:

1

Maximum On State Current:

.07 A

Maximum On State Voltage:

3 V

Maximum Operating Temperature:

100 Cel

Minimum Operating Temperature:

-40 Cel

Optoelectronic Type:

Packing Method:

TR

Minimum Peak Off-state Voltage:

600 V

Repetitive Off-state Voltage (Peak):

600 V

Maximum Reverse Leakage Current:

.0001 A

Trade Compliance

FODM3062R2V Optoelectronics trade compliance attributes, and parameters.

HTS

8541.40.80.00

SB

8541.40.80.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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