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FODM3012R2

Onsemi

FODM3012R2 by Onsemi

FODM3012R2 by Onsemi is a single TRIAC output optocoupler with a max on-state voltage of 3V and forward current of 0.06A. It operates b/w -40 to 100 °C, has an isolation voltage of 3750V, and is ideal for applications requiring optocoupler trigger device outputs in surface mount configurations.

Median Price

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4

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1k+

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PC Components Company LLC

USA . 7,649 parts In-Stock

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Bristol Electronics

USA . 2,500 parts In-Stock

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Vyrian

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Digiode

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Northwest PG Solutions

USA . 2,276 parts In-Stock

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Andel Nordic

Denmark . 5,815 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 9,686 parts In-Stock

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Problanco Electronics

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A-Z Elektronik GmbH

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TANS Electronics

Latvia . 4,684 parts In-Stock

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Alle Elektronik GmbH

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SupplyDigital Components

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Corphita

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Kulean Microsystems

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Lixinc

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Native Components

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UHIMA Technologies

Türkiye . 319 parts In-Stock

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Corohmni

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Overview

Experience the superior quality and reliability of Onsemi with the FODM3012R2 Optocoupler Trigger Device. Ideal for a wide range of applications, this TRIAC OUTPUT OPTOCOUPLER offers customers peace of mind with its high isolation voltage of 3750 V and maximum operating temperature of 100 °C. With a maximum forward current of 0.06 A and a compact surface mount design, this product provides exceptional value and performance for your projects. Trust in Onsemi for cutting-edge technology and unmatched innovation in optoelectronics.

Feature Benefit Bullets

Maximum On State Voltage: 3 V

Low on state voltage allows for efficient power usage and helps in reducing energy consumption.

Configuration: SINGLE

Single configuration simplifies the setup and usage of the optocoupler trigger device.

Maximum Forward Current: 0.06 A

With a maximum forward current of 0.06 A, this optocoupler can handle moderate current loads effectively.

Optoelectronic Type: TRIAC OUTPUT OPTOCOUPLER

Triac output optocoupler provides reliable triggering and isolation capabilities for connected devices.

Maximum Operating Temperature: 100 °C

High maximum operating temperature ensures the device can perform reliably under various environmental conditions.

Minimum Operating Temperature: -40 °C

Low minimum operating temperature allows the device to function in cold environments without issues.

Maximum Input Trigger Current: 0.005 A

Low input trigger current requirement ensures the device can be easily activated by connected circuits.

Repetitive Off-state Voltage (Peak): 250 V

High off-state voltage tolerance ensures the device can safely handle voltage spikes and fluctuations.

Packing Method: TR, 13 INCH

TR packing method provides protection and easy handling of the optocoupler during storage and transportation.

Maximum Reverse Leakage Current: 0.0001 A

Very low reverse leakage current minimizes power loss and improves overall efficiency.

Maximum Isolation Voltage: 3750 V

High isolation voltage ensures safety and protection for connected devices by preventing electrical feedback.

Mounting Feature: SURFACE MOUNT

Surface mount option allows for easy and convenient installation on circuit boards, saving space and time.

Maximum On State Current: 0.07 A

High on state current capability allows the optocoupler to reliably switch and control heavy loads.

Technical Specifications

Optocoupler Trigger Device Outputs FODM3012R2 attributes and parameters. Explore more Optocoupler Trigger Device Outputs devices from Onsemi

Specs

Additional Features:

UL APPROVED

Configuration:

SINGLE

Maximum Forward Current:

.06 A

Maximum Input Trigger Current:

.005 A

Maximum Isolation Voltage:

3750 V

Mounting Feature:

No. of Elements:

1

Maximum On State Current:

.07 A

Maximum On State Voltage:

3 V

Maximum Operating Temperature:

100 Cel

Minimum Operating Temperature:

-40 Cel

Optoelectronic Type:

Packing Method:

TR, 13 INCH

Repetitive Off-state Voltage (Peak):

250 V

Maximum Reverse Leakage Current:

.0001 A

Trade Compliance

FODM3012R2 Optoelectronics trade compliance attributes, and parameters.

HTS

8541.40.80.00

SB

8541.40.80.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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