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FOD817C

Onsemi

FOD817C by Onsemi

FOD817C by Onsemi is a single optocoupler with a max forward current of 0.05A and min operating temperature of -55°C. With a collector-emitter breakdown voltage of 70V, it's ideal for applications requiring high isolation voltage up to 5000V, such as industrial control systems and power supplies.

Median Price

$0.116

Lifecycle Status

Suppliers In-Stock

28

In-Stock Inventory

1k+

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Newark

USA . 7,281 parts In-Stock

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Adafruit Industries

USA . 70 parts In-Stock

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Arrow

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Verical

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Master Electronics

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Farnell

UK . 2,957 parts In-Stock

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Element14

Singapore . 2,957 parts In-Stock

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Avnet

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UK . 1,840 parts In-Stock

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Rochester

USA . 1,220 parts In-Stock

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Chip1Stop

Japan . 388 parts In-Stock

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Distributors (In-Stock)

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Digiode

USA . 2,254 parts In-Stock

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Nova Conductors

Japan . 10 parts In-Stock

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TME

Poland . 1,359 parts In-Stock

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Chip Stock

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NAC Semi

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LWI Electronics Inc

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IBS Electronics

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Vyrian

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ComSIT Distribution GmbH

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Flip Electronics

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ACDS - Activité Composants Distribution Service

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PC Components Company LLC

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Bristol Electronics

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Extreme Components

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Cyclops Electronics Ltd

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Prism Electronics

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Ampacity Inc.

Singapore . 3,727 parts In-Stock

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Corphita

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Corohmni

South Africa . 379 parts In-Stock

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Aranea Global

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Continental Prestige Electronics

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Argo Parts USA

USA . 698 parts In-Stock

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Semicontronic

India . 3,572 parts In-Stock

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Advanced Electronics

New Zealand . 70 parts In-Stock

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Aztec Data Supply Inc.

USA . 75 parts In-Stock

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Andel Nordic

Denmark . 4,867 parts In-Stock

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$9.064

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Metaverse IC Inc.

Canada . 35,000 parts In-Stock

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Perfect Parts

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Lixinc

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Infinite Electronics LLP (Excess)

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Problanco Electronics

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Authorized Procurement Solutions

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Eastek

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GreenTree Electronics

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Glotronic Ltd.

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SupplyDigital Components

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Kulean Microsystems

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Kepictronics

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Cyclops Electronics Ltd (Excess)

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Supply Digital

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UHIMA Technologies

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Robosynatics

Brazil . 300 parts In-Stock

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Lucentia Tech

USA . 300 parts In-Stock

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Component Stockers USA

USA . 204 parts In-Stock

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Overview

Unlock the next level of precision and reliability with the FOD817C by Onsemi, a leading manufacturer in the industry. This optocoupler transistor output offers unparalleled quality and performance, making it ideal for a wide range of applications. From industrial automation to medical equipment, this product ensures seamless operation and maximum efficiency. Experience the value and benefits of superior design and engineering with the FOD817C, providing customers with a competitive edge in their projects. Trust in Onsemi to deliver excellence every time.

Feature Benefit Bullets

Configuration: SINGLE

This optocoupler with a single configuration is ideal for applications requiring a single output signal.

Maximum Forward Current: 0.05 A

With a high maximum forward current, this optocoupler can handle a variety of loads effectively.

Optoelectronic Type: TRANSISTOR OUTPUT OPTOCOUPLER

Being a transistor output optocoupler, it provides fast response times and high output current capabilities.

Maximum Operating Temperature: 110 °C

With a high maximum operating temperature, this product can withstand harsh environmental conditions.

Minimum Operating Temperature: -55 °C

The low minimum operating temperature ensures reliable performance in cold environments.

Terminal Finish: Matte Tin (Sn) - annealed

The matte tin finish provides excellent solderability and long-term reliability.

Maximum Power Dissipation: 0.15 W

This optocoupler can handle high power dissipation, making it suitable for demanding applications.

Minimum Current Transfer Ratio: 200 %

With a high minimum current transfer ratio, this product ensures accurate signal transmission.

Maximum Dark Current: 100 nA

The low maximum dark current minimizes leakage current and improves signal integrity.

Packing Method: TUBE

The tube packaging method ensures safe transportation and storage of the optocoupler.

Maximum Response Time: 0.000018 s

With an ultra-fast maximum response time, this optocoupler is suitable for high-speed applications.

Minimum Collector-emitter Breakdown Voltage: 70 V

The high minimum breakdown voltage provides protection against voltage spikes.

Nominal Current Transfer Ratio: 200 %

The nominal current transfer ratio ensures consistent signal amplification and transmission.

Maximum Isolation Voltage: 5000 V

With a high isolation voltage, this optocoupler provides reliable electrical isolation between input and output.

Mounting Feature: THROUGH HOLE MOUNT

The through-hole mounting feature makes installation easy and secure.

Maximum Forward Voltage: 1.4 V

The low maximum forward voltage minimizes power loss and increases efficiency.

Maximum On State Current: 0.05 A

With a high maximum on-state current, this optocoupler can handle continuous output loads effectively.

Technical Specifications

Optocoupler Transistor Outputs FOD817C attributes and parameters. Explore more Optocoupler Transistor Outputs devices from Onsemi

Specs

Additional Features:

UL APPROVED

Minimum Collector-emitter Breakdown Voltage:

70 V

Configuration:

SINGLE

Minimum Current Transfer Ratio:

200 %

Nominal Current Transfer Ratio:

200 %

Maximum Dark Current:

100 nA

Maximum Forward Current:

.05 A

Maximum Forward Voltage:

1.4 V

Maximum Isolation Voltage:

5000 V

JESD-609 Code:

e3

Mounting Feature:

No. of Elements:

1

Maximum On State Current:

.05 A

Maximum Operating Temperature:

110 Cel

Minimum Operating Temperature:

-55 Cel

Optoelectronic Type:

Packing Method:

TUBE

Maximum Power Dissipation:

.15 W

Maximum Response Time:

.000018 s

Sub-Category:

Optocoupler - Transistor Outputs

Terminal Finish:

Trade Compliance

FOD817C Optoelectronics trade compliance attributes, and parameters.

HTS

8541.40.80.00

SB

8541.40.80.00

NSN

5962-01-653-7658, 5962016537658

NIIN

016537658

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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