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FOD817A

Onsemi

FOD817A by Onsemi

FOD817A by Onsemi is a single optocoupler with a max forward current of 0.05A and min CTR of 80%. It operates b/w -55°C to 110°C, has an isolation voltage of 5000V, and is ideal for applications requiring fast response times in through-hole mounting configurations.

Median Price

$0.266

Lifecycle Status

Suppliers In-Stock

32

In-Stock Inventory

1k+

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Arrow

USA . 24,786 parts In-Stock

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Newark

USA . 2,705 parts In-Stock

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DigiKey

USA . 7,774 parts In-Stock

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Adafruit Industries

USA . 44 parts In-Stock

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Verical

USA . 18,956 parts In-Stock

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Flip Electronics (Authorized)

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Element14

Singapore . 2,900 parts In-Stock

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Chip1Stop

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Digiode

USA . 1,634 parts In-Stock

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Nova Conductors

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Forefront Electronics and Design

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Chip Stock

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Infinite Electronics LLP

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NAC Semi

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Lantek

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IBS Electronics

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Cyclops Electronics Ltd

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Component Sense

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DF Sales Co.

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DF Sales Co.

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PC Components Company LLC

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Bristol Electronics

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ComSIT Distribution GmbH

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ACDS - Activité Composants Distribution Service

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Semicontronic

India . 11,822 parts In-Stock

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Ampacity Inc.

Singapore . 11,758 parts In-Stock

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Corohmni

South Africa . 94 parts In-Stock

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Corphita

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Argo Parts USA

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Netroflash

USA . 1,000 parts In-Stock

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Aztec Data Supply Inc.

USA . 823 parts In-Stock

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Continental Prestige Electronics

USA . 13,470 parts In-Stock

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Advanced Electronics

New Zealand . 44 parts In-Stock

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Infinite Electronics LLP (Excess)

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CPlus Electronics

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Authorized Procurement Solutions

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SupplyDigital Components

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Problanco Electronics

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Kulean Microsystems

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Futuretech Components

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Supply Digital

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Robosynatics

Brazil . 900 parts In-Stock

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Lucentia Tech

USA . 900 parts In-Stock

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S.R.D Solutions

India . 493 parts In-Stock

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Cyclops Electronics Ltd (Excess)

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UHIMA Technologies

Türkiye . 249 parts In-Stock

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Glotronic Ltd.

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Overview

Enhance the reliability and performance of your electronic designs with the FOD817A optocoupler transistor output by Onsemi. With a high minimum current transfer ratio of 80% and maximum isolation voltage of 5000V, this single configuration component ensures seamless communication between different circuits while maintaining strict electrical separation. Ideal for applications requiring precise signal transfer, such as industrial automation and power supply control, the FOD817A offers unmatched value and efficiency. Trust Onsemi's reputation for quality and innovation to elevate your projects to the next level.

Feature Benefit Bullets

Configuration: SINGLE

Simplifies installation and space requirements.

Maximum Forward Current: 0.05 A

Capable of handling high current loads.

Optoelectronic Type: TRANSISTOR OUTPUT OPTOCOUPLER

Offers reliable electrical isolation.

Maximum Operating Temperature: 110 °C

Suitable for a wide range of environments.

Minimum Operating Temperature: -55 °C

Ensures functionality in extreme cold conditions.

Terminal Finish: Matte Tin (Sn) - annealed

Provides corrosion resistance for longevity.

Maximum Power Dissipation: 0.15 W

Efficiently manages heat dissipation.

Minimum Current Transfer Ratio: 80%

Ensures accurate and reliable signal transmission.

Maximum Dark Current: 100 nA

Minimizes power consumption in idle state.

Packing Method: TUBE

Facilitates easy storage and organization.

Maximum Response Time: 0.000018 s

Enables quick signal transmission.

Minimum Collector-emitter Breakdown Voltage: 70 V

Offers protection against voltage spikes.

Nominal Current Transfer Ratio: 80%

Maintains stable signal transfer under varying conditions.

Maximum Isolation Voltage: 5000 V

Provides high level of electrical insulation.

Mounting Feature: THROUGH HOLE MOUNT

Allows for secure and stable installation.

Maximum Forward Voltage: 1.4 V

Efficiently converts input signal to output.

Maximum On State Current: 0.05 A

Capable of handling high current flow.

Technical Specifications

Optocoupler Transistor Outputs FOD817A attributes and parameters. Explore more Optocoupler Transistor Outputs devices from Onsemi

Specs

Additional Features:

UL APPROVED

Minimum Collector-emitter Breakdown Voltage:

70 V

Configuration:

SINGLE

Minimum Current Transfer Ratio:

80 %

Nominal Current Transfer Ratio:

80 %

Maximum Dark Current:

100 nA

Maximum Forward Current:

.05 A

Maximum Forward Voltage:

1.4 V

Maximum Isolation Voltage:

5000 V

JESD-609 Code:

e3

Mounting Feature:

No. of Elements:

1

Maximum On State Current:

.05 A

Maximum Operating Temperature:

110 Cel

Minimum Operating Temperature:

-55 Cel

Optoelectronic Type:

Packing Method:

TUBE

Maximum Power Dissipation:

.15 W

Maximum Response Time:

.000018 s

Sub-Category:

Optocoupler - Transistor Outputs

Terminal Finish:

Trade Compliance

FOD817A Optoelectronics trade compliance attributes, and parameters.

HTS

8541.40.80.00

SB

8541.40.80.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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