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FFSPF0865A

Onsemi

FFSPF0865A by Onsemi

FFSPF0865A by Onsemi is a single rectifier diode with 650V peak reverse voltage and 8A output current. It features a max power dissipation of 39W, operating temperature range from -55 to 175 °C, and uses silicon carbide technology for efficiency applications.

Median Price

$3.456

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 905 parts In-Stock

1+ parts

$4.900

100+ parts

$2.313

1k+ parts

$1.913

10k+ parts

-

905

$4.900

$2.313

$1.913

-

Chip1Stop

Japan . 584 parts In-Stock

1+ parts

$12.400

100+ parts

$5.120

1k+ parts

$3.920

10k+ parts

-

584

$12.400

$5.120

$3.920

-

Rochester

USA . 10,113 parts In-Stock

1+ parts

-

100+ parts

$1.800

1k+ parts

$1.610

10k+ parts

$1.510

10,113

-

$1.800

$1.610

$1.510

Verical

USA . 4,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$2.013

10k+ parts

-

4,000

-

-

$2.013

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 551 parts In-Stock

1+ parts

$1.881

100+ parts

-

1k+ parts

-

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551

$1.881

-

-

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Vyrian

USA . 6,483 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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6,483

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 1,954 parts In-Stock

1+ parts

$1.782

100+ parts

-

1k+ parts

-

10k+ parts

-

1,954

$1.782

-

-

-

Corohmni

South Africa . 298 parts In-Stock

1+ parts

$1.980

100+ parts

-

1k+ parts

-

10k+ parts

-

298

$1.980

-

-

-

Component Stockers USA

USA . 11,983 parts In-Stock

1+ parts

$2.050

100+ parts

$1.920

1k+ parts

$1.740

10k+ parts

-

11,983

$2.050

$1.920

$1.740

-

Microchip USA

USA . 5,311 parts In-Stock

1+ parts

$12.350

100+ parts

-

1k+ parts

-

10k+ parts

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5,311

$12.350

-

-

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SupplyDigital Components

Austria . 7,388 parts In-Stock

1+ parts

-

100+ parts

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7,388

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TANS Electronics

Latvia . 7,011 parts In-Stock

1+ parts

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7,011

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-

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Problanco Electronics

Mexico . 6,706 parts In-Stock

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6,706

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-

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Perfect Parts

USA . 6,533 parts In-Stock

1+ parts

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6,533

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-

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Kulean Microsystems

USA . 3,847 parts In-Stock

1+ parts

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3,847

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Northwest PG Solutions

USA . 1,757 parts In-Stock

1+ parts

-

100+ parts

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1,757

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UHIMA Technologies

Türkiye . 915 parts In-Stock

1+ parts

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915

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Authorized Procurement Solutions

USA . 584 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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10k+ parts

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584

-

-

-

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Native Components

USA . 133 parts In-Stock

1+ parts

-

100+ parts

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133

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Overview

Experience unmatched quality and reliability with the FFSPF0865A by Onsemi. As a leading manufacturer in the industry of diodes & rectifiers, Onsemi ensures top-notch performance and durability in every product. Ideal for efficiency applications, this single rectifier diode offers a maximum output current of 8A and a maximum reverse voltage of 650V. With a package style of flange mount and terminal finish of matte tin, this diode is designed for easy installation and long-lasting functionality. Trust Onsemi to deliver superior technology and value in every product, making the FFSPF0865A the perfect choice for your power management needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used in the package body makes the diode durable and resistant to environmental factors, ensuring long-term reliability in various operating conditions.

Maximum Reverse Current: 200 uA

The low maximum reverse current ensures minimal power loss when the diode is in reverse bias, contributing to overall energy efficiency.

Maximum Operating Temperature: 175 °C

The high maximum operating temperature allows the diode to function reliably in demanding environments without overheating, ensuring stable performance.

Maximum Power Dissipation: 39 W

With a high maximum power dissipation rating, this diode can handle significant power levels without getting damaged, making it suitable for applications requiring high power handling capabilities.

Diode Type: RECTIFIER DIODE

Being a rectifier diode, this product is designed specifically for converting alternating current (AC) to direct current (DC), making it ideal for power supply applications.

Diode Element Material: SILICON CARBIDE

The use of silicon carbide as the diode element material provides high efficiency and fast switching speeds, making this diode suitable for high-frequency applications where performance is critical.

Technical Specifications

Diodes & Rectifiers FFSPF0865A attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

HIGH RELIABILITY, PD-CASE

Application:

EFFICIENCY

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON CARBIDE

Diode Type:

Maximum Forward Voltage (VF):

1.75 V

JEDEC-95 Code:

TO-220AC

JESD-30 Code:

R-PSFM-T2

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

640 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

8 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Power Dissipation:

39 W

Maximum Repetitive Peak Reverse Voltage:

650 V

Maximum Reverse Current:

200 uA

Surface Mount:

NO

Technology:

AVALANCHE

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

FFSPF0865A Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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