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FFSP20120A

Onsemi

FFSP20120A by Onsemi

FFSP20120A by Onsemi is a single Schottky rectifier diode with a max output current of 20A and a max repetitive peak reverse voltage of 1200V. It operates efficiently in temperatures ranging from -55°C to 175°C, making it suitable for high-power applications requiring up to 340W power dissipation. The diode's silicon carbide element material and matte tin terminal finish ensure reliable performance in various electronic systems.

Median Price

$6.818

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip1Stop

Japan . 31 parts In-Stock

1+ parts

$6.818

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-

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31

$6.818

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DigiKey

USA . 448 parts In-Stock

1+ parts

$11.610

100+ parts

$6.054

1k+ parts

$5.598

10k+ parts

-

448

$11.610

$6.054

$5.598

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Mouser Electronics

USA . 29 parts In-Stock

1+ parts

$11.610

100+ parts

$6.490

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29

$11.610

$6.490

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Verical

USA . 14,400 parts In-Stock

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$5.633

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14,400

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$5.633

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Arrow

USA . 6,400 parts In-Stock

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$5.689

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6,400

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$5.689

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Avnet

USA . 800 parts In-Stock

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$17.677

10k+ parts

$16.586

800

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$17.677

$16.586

Rochester

USA . 1 parts In-Stock

1+ parts

-

100+ parts

$5.610

1k+ parts

$5.020

10k+ parts

$4.720

1

-

$5.610

$5.020

$4.720

Distributors (In-Stock)

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Digiode

USA . 2,519 parts In-Stock

1+ parts

$5.909

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2,519

$5.909

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Vyrian

USA . 2,184 parts In-Stock

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$6.220

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2,184

$6.220

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Flip Electronics

USA . 8,000 parts In-Stock

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8,000

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NAC Semi

USA . 800 parts In-Stock

1+ parts

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100+ parts

$14.640

1k+ parts

$13.180

10k+ parts

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800

-

$14.640

$13.180

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 720 parts In-Stock

1+ parts

$1.154

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720

$1.154

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Northwest PG Solutions

USA . 534 parts In-Stock

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$1.269

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534

$1.269

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Corphita

USA . 1,998 parts In-Stock

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$5.598

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1,998

$5.598

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Corohmni

South Africa . 83 parts In-Stock

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$6.220

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83

$6.220

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Component Stockers USA

USA . 5,315 parts In-Stock

1+ parts

$7.400

100+ parts

$7.410

1k+ parts

$8.640

10k+ parts

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5,315

$7.400

$7.410

$8.640

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Microchip USA

USA . 2,985 parts In-Stock

1+ parts

$34.750

100+ parts

$34.250

1k+ parts

$34.000

10k+ parts

$33.760

2,985

$34.750

$34.250

$34.000

$33.760

QUARKTWIN TECHNOLOGY LTD

USA . 9,364 parts In-Stock

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Problanco Electronics

Mexico . 7,358 parts In-Stock

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TANS Electronics

Latvia . 6,228 parts In-Stock

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Kulean Microsystems

USA . 4,506 parts In-Stock

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Perfect Parts

USA . 3,231 parts In-Stock

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SupplyDigital Components

Austria . 2,658 parts In-Stock

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Supply Digital

USA . 808 parts In-Stock

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GreenTree Electronics

Israel . 545 parts In-Stock

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Authorized Procurement Solutions

USA . 445 parts In-Stock

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445

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UHIMA Technologies

Türkiye . 374 parts In-Stock

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374

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Overview

Unlock the power of efficiency with the FFSP20120A by Onsemi. This high-quality Schottky rectifier diode offers reliable performance and durability, making it the ideal choice for a wide range of applications. From industrial to automotive settings, this product delivers maximum output current of 20A and a maximum repetitive peak reverse voltage of 1200V. Trust in Onsemi's expertise in diodes and rectifiers to provide you with a solution that combines value, benefits, and advantages all in one package.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diode, making it suitable for various applications.

Maximum Reverse Current: 200 uA

Ensures minimal leakage current, enhancing efficiency and performance of the diode.

Package Shape: RECTANGULAR

Allows for easy installation and mounting in electronic circuits.

Maximum Operating Temperature: 175 °C

Can withstand high temperature environments, increasing the versatility of the diode.

Maximum Power Dissipation: 340 W

Capable of handling high power levels, making it suitable for demanding applications.

Diode Type: RECTIFIER DIODE

Designed specifically for rectification purposes, ensuring reliable and efficient conversion of AC to DC.

Technology: SCHOTTKY

Utilizes Schottky technology for lower voltage drops and faster switching, improving overall performance.

Maximum Repetitive Peak Reverse Voltage: 1200 V

Withstands high reverse voltages, making it ideal for rectification and voltage regulation.

Diode Element Material: SILICON CARBIDE

Provides high thermal conductivity and efficiency, enhancing the durability and reliability of the diode.

Technical Specifications

Diodes & Rectifiers FFSP20120A attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

HIGH RELIABILITY, PD-CASE

Application:

EFFICIENCY

Config:

SINGLE

Diode Element Material:

SILICON CARBIDE

Diode Type:

Maximum Forward Voltage (VF):

1.75 V

JEDEC-95 Code:

TO-220AC

JESD-30 Code:

R-PSFM-T2

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

135 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

20 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Power Dissipation:

340 W

Maximum Repetitive Peak Reverse Voltage:

1200 V

Maximum Reverse Current:

200 uA

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

FFSP20120A Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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