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FFSP10120A

Onsemi

FFSP10120A by Onsemi

FFSP10120A by Onsemi is a single Schottky rectifier diode with a max output current of 10A and max repetitive peak reverse voltage of 1200V. It operates efficiently in temperatures ranging from -55 to 175°C, making it suitable for high-power applications requiring up to 168W power dissipation. The diode's silicon carbide element material and matte tin terminal finish ensure reliable performance in various electronic circuits.

Median Price

$5.815

Lifecycle Status

Suppliers In-Stock

12

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 649 parts In-Stock

1+ parts

$7.450

100+ parts

$3.686

1k+ parts

$3.120

10k+ parts

-

649

$7.450

$3.686

$3.120

-

Mouser Electronics

USA . 100 parts In-Stock

1+ parts

$7.450

100+ parts

$3.610

1k+ parts

-

10k+ parts

-

100

$7.450

$3.610

-

-

Chip1Stop

Japan . 580 parts In-Stock

1+ parts

$21.300

100+ parts

$9.450

1k+ parts

$7.150

10k+ parts

-

580

$21.300

$9.450

$7.150

-

Rochester

USA . 2,603 parts In-Stock

1+ parts

-

100+ parts

$3.130

1k+ parts

$2.800

10k+ parts

$2.630

2,603

-

$3.130

$2.800

$2.630

Verical

USA . 2,603 parts In-Stock

1+ parts

-

100+ parts

$3.913

1k+ parts

$3.500

10k+ parts

$3.288

2,603

-

$3.913

$3.500

$3.288

Future Electronics

Canada . 800 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$4.180

10k+ parts

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800

-

-

$4.180

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,484 parts In-Stock

1+ parts

$3.296

100+ parts

-

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-

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2,484

$3.296

-

-

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Vyrian

USA . 2,472 parts In-Stock

1+ parts

$3.470

100+ parts

-

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-

10k+ parts

-

2,472

$3.470

-

-

-

Bristol Electronics

USA . 30 parts In-Stock

1+ parts

$6.720

100+ parts

$3.360

1k+ parts

-

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30

$6.720

$3.360

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-

NAC Semi

USA . 1,600 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$8.360

10k+ parts

$7.600

1,600

-

-

$8.360

$7.600

IBS Electronics

USA . 800 parts In-Stock

1+ parts

-

100+ parts

$6.914

1k+ parts

$5.862

10k+ parts

-

800

-

$6.914

$5.862

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Microfarads

USA . 28 parts In-Stock

1+ parts

-

100+ parts

-

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28

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Distributors (Availability)

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Corphita

USA . 1,847 parts In-Stock

1+ parts

$3.123

100+ parts

-

1k+ parts

-

10k+ parts

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1,847

$3.123

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-

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Corohmni

South Africa . 366 parts In-Stock

1+ parts

$3.470

100+ parts

-

1k+ parts

-

10k+ parts

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366

$3.470

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Microchip USA

USA . 2,932 parts In-Stock

1+ parts

$19.740

100+ parts

$19.460

1k+ parts

$19.320

10k+ parts

$19.180

2,932

$19.740

$19.460

$19.320

$19.180

Native Components

USA . 286 parts In-Stock

1+ parts

$61.780

100+ parts

-

1k+ parts

-

10k+ parts

$59.309

286

$61.780

-

-

$59.309

Northwest PG Solutions

USA . 575 parts In-Stock

1+ parts

$67.958

100+ parts

-

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575

$67.958

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Perfect Parts

USA . 6,427 parts In-Stock

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6,427

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TANS Electronics

Latvia . 6,134 parts In-Stock

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6,134

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Problanco Electronics

Mexico . 5,818 parts In-Stock

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5,818

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SupplyDigital Components

Austria . 5,341 parts In-Stock

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5,341

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Kulean Microsystems

USA . 3,933 parts In-Stock

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3,933

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Lixinc

USA . 1,105 parts In-Stock

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1,105

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Eastek

USA . 700 parts In-Stock

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700

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GreenTree Electronics

Israel . 683 parts In-Stock

1+ parts

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683

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UHIMA Technologies

Türkiye . 217 parts In-Stock

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217

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Overview

Looking for a reliable and efficient solution for your power needs? Look no further than the FFSP10120A by Onsemi. As a leader in the industry, Onsemi delivers top-quality diodes and rectifiers that are perfect for applications requiring high efficiency. With a maximum output current of 10A and a maximum repetitive peak reverse voltage of 1200V, this Schottky diode is sure to meet your power requirements with ease. Trust Onsemi for superior performance and value in every product they offer.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection to the diode, making it long-lasting and suitable for various environments.

Maximum Reverse Current: 200 uA

Low reverse current ensures efficiency and prevents unnecessary power loss in the circuit.

Maximum Operating Temperature: 175 °C

With a high maximum operating temperature, this diode can withstand heat without compromising its performance.

Maximum Power Dissipation: 168 W

High power dissipation capability allows the diode to handle large amounts of power without overheating.

Diode Type: RECTIFIER DIODE

As a rectifier diode, this product efficiently converts AC to DC, making it suitable for various electronic applications.

Technology: SCHOTTKY

Schottky diodes have fast switching speeds and low forward voltage drop, ideal for high-frequency applications requiring efficiency.

Maximum Repetitive Peak Reverse Voltage: 1200 V

High reverse voltage rating provides protection against voltage spikes and ensures the diode's reliability in demanding conditions.

Diode Element Material: SILICON CARBIDE

Silicon carbide offers superior thermal conductivity and can handle higher operating temperatures, making the diode more robust and efficient.

Technical Specifications

Diodes & Rectifiers FFSP10120A attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

HIGH RELIABILITY, PD-CASE

Application:

EFFICIENCY

Config:

SINGLE

Diode Element Material:

SILICON CARBIDE

Diode Type:

Maximum Forward Voltage (VF):

1.75 V

JEDEC-95 Code:

TO-220AC

JESD-30 Code:

R-PSFM-T2

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

90 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

10 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Power Dissipation:

168 W

Maximum Repetitive Peak Reverse Voltage:

1200 V

Maximum Reverse Current:

200 uA

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

FFSP10120A Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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