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FFPF30UA60S

Onsemi

FFPF30UA60S by Onsemi

FFPF30UA60S by Onsemi is a single rectifier diode with a max output current of 30A and max repetitive peak reverse voltage of 600V. It features an ultra-fast recovery time of 0.09us, making it ideal for applications requiring high-speed switching capabilities. The diode's technology is avalanche-based, with a package style of flange mount suitable for isolated case connections.

Median Price

$0.749

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 50 parts In-Stock

1+ parts

-

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$0.749

1k+ parts

$0.622

10k+ parts

$0.554

50

-

$0.749

$0.622

$0.554

Distributors (In-Stock)

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Nova Conductors

Japan . 38 parts In-Stock

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$0.495

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38

$0.495

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Digiode

USA . 2,733 parts In-Stock

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$0.583

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Cyclops Electronics Ltd

UK . 29,940 parts In-Stock

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Chip Stock

USA . 20,500 parts In-Stock

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Flip Electronics

USA . 16,000 parts In-Stock

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Vyrian

USA . 6,389 parts In-Stock

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Martec Srl

Italy . 5,849 parts In-Stock

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LWI Electronics Inc

India . 380 parts In-Stock

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 1,266 parts In-Stock

1+ parts

$0.160

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$0.160

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Corohmni

South Africa . 84 parts In-Stock

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$0.485

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84

$0.485

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Continental Prestige Electronics

USA . 4,009 parts In-Stock

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$0.495

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$0.485

4,009

$0.495

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$0.485

Argo Parts USA

USA . 1,581 parts In-Stock

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$0.495

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$0.480

1,581

$0.495

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$0.480

Ampacity Inc.

Singapore . 50 parts In-Stock

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$0.520

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$0.520

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Semicontronic

India . 50 parts In-Stock

1+ parts

$0.520

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$0.507

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$0.504

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50

$0.520

$0.507

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Corphita

USA . 974 parts In-Stock

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$0.553

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974

$0.553

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Advanced Electronics

New Zealand . 60 parts In-Stock

1+ parts

$0.794

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$0.730

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$0.684

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60

$0.794

$0.730

$0.684

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Microchip USA

USA . 205 parts In-Stock

1+ parts

$9.040

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$8.980

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$8.950

10k+ parts

$8.920

205

$9.040

$8.980

$8.950

$8.920

AZTECH Wire

Italy . 420 parts In-Stock

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$9.362

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Perfect Parts

USA . 140,515 parts In-Stock

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RC Electronics

USA . 79,189 parts In-Stock

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TANS Electronics

Latvia . 7,898 parts In-Stock

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Kulean Microsystems

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Glotronic Ltd.

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SupplyDigital Components

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Lixinc

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Infinite Electronics LLP (Excess)

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Problanco Electronics

Mexico . 1,851 parts In-Stock

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Supply Digital

USA . 1,617 parts In-Stock

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UHIMA Technologies

Türkiye . 823 parts In-Stock

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Authorized Procurement Solutions

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GreenTree Electronics

Israel . 170 parts In-Stock

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Overview

Experience ultra-fast recovery and high-quality performance with the FFPF30UA60S by Onsemi. As a leading manufacturer in the industry of Diodes & Rectifiers, Onsemi ensures top-notch reliability and efficiency in all their products. The FFPF30UA60S is perfect for applications requiring quick response times and precision, making it ideal for a wide range of electronics projects. Trust in Onsemi to deliver exceptional value and superior benefits with the FFPF30UA60S, providing customers with the advantages they need to succeed in their ventures.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides durability and protection, making it suitable for various applications.

Maximum Reverse Recovery Time: 0.09 us

The ultra fast reverse recovery time ensures efficient operation and quick response of the diode.

Application: ULTRA FAST RECOVERY

Designed for ultra fast recovery applications, making it ideal for high speed circuits and systems.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this diode can withstand elevated temperatures without compromising performance.

Maximum Forward Voltage (VF): 2 V

The low forward voltage drop helps minimize power loss and improves efficiency in the circuit.

Technical Specifications

Diodes & Rectifiers FFPF30UA60S attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE, HIGH RELIABILITY

Application:

ULTRA FAST RECOVERY

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

2 V

JEDEC-95 Code:

TO-220AC

JESD-30 Code:

R-PSFM-T2

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

180 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

30 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

600 V

Maximum Reverse Recovery Time:

.09 us

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Technology:

AVALANCHE

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

FFPF30UA60S Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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