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FFPF30UP20STU

Onsemi

FFPF30UP20STU by Onsemi

FFPF30UP20STU by Onsemi is a single rectifier diode with a max output current of 30A and max repetitive peak reverse voltage of 200V. It features an ultra-fast soft recovery power application, operating b/w -65°C to 150°C. The diode has a package style of flange mount and a max reverse recovery time of 0.05us, making it ideal for high-power applications.

Median Price

$1.428

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

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Flip Electronics (Authorized)

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Nova Conductors

Japan . 100 parts In-Stock

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$1.428

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Vyrian

USA . 7,151 parts In-Stock

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Digiode

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Bristol Electronics

USA . 21 parts In-Stock

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LWI Electronics Inc

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 307 parts In-Stock

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$0.040

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307

$0.040

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Advanced Electronics

New Zealand . 70 parts In-Stock

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$0.061

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$0.058

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$0.058

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$0.061

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Corohmni

South Africa . 495 parts In-Stock

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$1.399

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Argo Parts USA

USA . 4,305 parts In-Stock

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Continental Prestige Electronics

USA . 3,566 parts In-Stock

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$1.399

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Netroflash

USA . 50 parts In-Stock

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$1.428

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$1.357

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$1.328

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Ampacity Inc.

Singapore . 989 parts In-Stock

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$3.010

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$3.010

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Semicontronic

India . 612 parts In-Stock

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$3.010

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$2.935

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$2.920

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Perfect Parts

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TANS Electronics

Latvia . 7,407 parts In-Stock

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SupplyDigital Components

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Glotronic Ltd.

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Kulean Microsystems

USA . 1,616 parts In-Stock

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Problanco Electronics

Mexico . 1,453 parts In-Stock

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Corphita

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UHIMA Technologies

Türkiye . 55 parts In-Stock

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Overview

Enhance your power management systems with the FFPF30UP20STU by Onsemi. With a reputation for top-notch quality and reliability, Onsemi's diodes and rectifiers are trusted by professionals worldwide. The FFPF30UP20STU is designed for ultra-fast soft recovery power applications, offering a maximum output current of 30A and a maximum repetitive peak reverse voltage of 200V. This product is a game-changer in the industry, providing customers with unmatched value, efficiency, and performance. Upgrade your power systems today with the FFPF30UP20STU and experience the difference!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the diode, making it suitable for various applications.

Maximum Reverse Recovery Time: 0.05 us

The ultra fast reverse recovery time ensures efficient switching and responsiveness in power applications.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this diode can withstand heat and perform reliably in different environments.

Diode Type: RECTIFIER DIODE

As a rectifier diode, this product is specifically designed for converting alternating current to direct current efficiently.

Maximum Forward Voltage (VF): 1 V

The low forward voltage drop of 1V minimizes power loss and enhances the efficiency of the diode.

Maximum Output Current: 30 A

With a high output current capacity, this diode can handle heavy loads and provide reliable power conversion.

Technical Specifications

Diodes & Rectifiers FFPF30UP20STU attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

ULTRA FAST SOFT RECOVERY POWER

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1 V

JEDEC-95 Code:

TO-220AC

JESD-30 Code:

R-PSFM-T2

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

300 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

30 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

200 V

Maximum Reverse Recovery Time:

.05 us

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

FFPF30UP20STU Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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