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FFD08S60S-F085

Onsemi

FFD08S60S-F085 by Onsemi

FFD08S60S-F085 by Onsemi is a single diode with PLASTIC/EPOXY body, suitable for HYPERFAST SOFT RECOVERY POWER applications. It features a 0.03 us reverse recovery time, 100 uA reverse current, and 2.6 V max forward voltage. Ideal for high-speed power circuits requiring up to 8 A output current at 600 V peak reverse voltage.

Median Price

$0.586

Lifecycle Status

EOL

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 207,000 parts In-Stock

1+ parts

-

100+ parts

$0.576

1k+ parts

$0.478

10k+ parts

$0.426

207,000

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$0.576

$0.478

$0.426

Verical

USA . 207,000 parts In-Stock

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$0.597

10k+ parts

$0.532

207,000

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$0.597

$0.532

Distributors (In-Stock)

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ComSIT Distribution GmbH

Germany . 3,599 parts In-Stock

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Vyrian

USA . 2,530 parts In-Stock

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Flip Electronics

USA . 2,200 parts In-Stock

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Digiode

USA . 785 parts In-Stock

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785

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Distributors (Availability)

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Native Components

USA . 759 parts In-Stock

1+ parts

$0.087

100+ parts

-

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$0.083

759

$0.087

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$0.083

Northwest PG Solutions

USA . 1,097 parts In-Stock

1+ parts

$0.095

100+ parts

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$0.084

1,097

$0.095

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$0.084

Metaverse IC Inc.

Canada . 56,986 parts In-Stock

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Kepictronics

USA . 15,500 parts In-Stock

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15,500

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QUARKTWIN TECHNOLOGY LTD

USA . 13,051 parts In-Stock

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Kulean Microsystems

USA . 7,673 parts In-Stock

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RC Electronics

USA . 7,500 parts In-Stock

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$0.550

1k+ parts

$0.520

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$0.510

7,500

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$0.550

$0.520

$0.510

TANS Electronics

Latvia . 7,170 parts In-Stock

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Perfect Parts

USA . 7,040 parts In-Stock

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Glotronic Ltd.

UK . 3,900 parts In-Stock

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SupplyDigital Components

Austria . 2,864 parts In-Stock

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GreenTree Electronics

Israel . 2,500 parts In-Stock

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Problanco Electronics

Mexico . 2,413 parts In-Stock

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Supply Digital

USA . 2,078 parts In-Stock

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Corphita

USA . 1,065 parts In-Stock

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Authorized Procurement Solutions

USA . 1,000 parts In-Stock

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UHIMA Technologies

Türkiye . 958 parts In-Stock

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Speed Components Ltd (Excess)

Israel . 858 parts In-Stock

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Microchip USA

USA . 330 parts In-Stock

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Corohmni

South Africa . 315 parts In-Stock

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Overview

Discover the superior quality and reliability of the FFD08S60S-F085 by Onsemi, a leading manufacturer in the diodes & rectifiers category. This hyperfast soft recovery power diode offers customers exceptional value with its high efficiency and performance. Ideal for a wide range of applications, this product ensures maximum operating temperature of 150°C and impressive maximum output current of 8A. Trust Onsemi to provide you with innovative technology and top-notch products that deliver outstanding results every time.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diode, ensuring long-term reliability.

Config: SINGLE

Simplified design with a single configuration for easier integration into electronic circuits.

Surface Mount: YES

Allows for easy and secure mounting onto circuit boards, saving space and ensuring a stable connection.

Maximum Reverse Recovery Time: 0.03 us

Quick reverse recovery time improves efficiency and reduces power loss in high-speed applications.

Maximum Reverse Current: 100 uA

Low reverse current helps minimize energy wastage and improves overall performance.

Package Shape: RECTANGULAR

Rectangular shape makes it easier to place and solder onto circuit boards with precision.

No. of Terminals: 2

Simple 2-terminal design for straightforward installation and connectivity.

Package Style (Meter): SMALL OUTLINE

Compact size allows for space-saving and efficient use in electronic devices.

Application: HYPERFAST SOFT RECOVERY POWER

Specifically designed for high-speed applications requiring quick and efficient power recovery.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, suitable for a wide range of operating environments.

Minimum Operating Temperature: -65 °C

Can operate in extremely cold temperatures, offering versatility in different environmental conditions.

Terminal Finish: Matte Tin (Sn) - annealed

Matte tin finish provides good conductivity and solderability for reliable connections.

Terminal Position: SINGLE

Single terminal position simplifies installation and reduces chances of errors during assembly.

Case Connection: CATHODE

Clearly marked cathode connection for easy identification and proper circuit integration.

Maximum Time At Peak Reflow Temperature (s): 30

Withstands peak reflow temperature for a specified time, ensuring stable performance during soldering process.

Peak Reflow Temperature °C: 260

Can withstand high reflow temperatures during manufacturing processes without damage.

Reference Standard: AEC-Q101

Meets industry standards for reliability and quality, suitable for automotive applications.

Diode Type: RECTIFIER DIODE

Rectifier diode design for converting AC to DC with low forward voltage drop and high current capacity.

Maximum Forward Voltage (VF): 2.6 V

Low forward voltage minimizes power loss and heat generation, improving efficiency.

Maximum Output Current: 8 A

High output current capacity for powering a variety of electronic devices or circuits.

Technology: AVALANCHE

Avalanche technology allows for high-speed switching and reliability in power applications.

Terminal Form: GULL WING

Gull wing terminal form for easy surface mounting and enhanced mechanical strength.

Maximum Repetitive Peak Reverse Voltage: 600 V

High reverse voltage capacity for robust performance in demanding applications.

Maximum Non Repetitive Peak Forward Current: 80 A

High peak forward current capability for handling surge currents and transient events.

Diode Element Material: SILICON NITRIDE

Silicon nitride material for the diode element provides stability and efficiency in power conversion.

Technical Specifications

Diodes & Rectifiers FFD08S60S-F085 attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE, HIGH RELIABILITY

Application:

HYPERFAST SOFT RECOVERY POWER

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON NITRIDE

Diode Type:

Maximum Forward Voltage (VF):

2.6 V

JEDEC-95 Code:

TO-252

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

80 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

8 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

600 V

Maximum Reverse Current:

100 uA

Maximum Reverse Recovery Time:

.03 us

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

FFD08S60S-F085 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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