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FDZ1323NZ

Onsemi

FDZ1323NZ by Onsemi

FDZ1323NZ by Onsemi is a N-CHANNEL FET with 2 elements and built-in diode, ideal for switching applications. It operates in enhancement mode with max power dissipation of 2W. With a max operating temperature of 150°C, it features metal-oxide semiconductor technology and has a package style of grid array.

Median Price

$1.071

Lifecycle Status

Suppliers In-Stock

16

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip1Stop

Japan . 4,948 parts In-Stock

1+ parts

$1.560

100+ parts

$0.657

1k+ parts

$0.486

10k+ parts

-

4,948

$1.560

$0.657

$0.486

-

DigiKey

USA . 12,989 parts In-Stock

1+ parts

$1.690

100+ parts

$0.712

1k+ parts

$0.511

10k+ parts

$0.469

12,989

$1.690

$0.712

$0.511

$0.469

Mouser Electronics

USA . 8,816 parts In-Stock

1+ parts

$1.690

100+ parts

$0.712

1k+ parts

$0.470

10k+ parts

$0.432

8,816

$1.690

$0.712

$0.470

$0.432

Farnell

UK . 63,184 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.582

63,184

-

-

-

$0.582

Rochester

USA . 61,184 parts In-Stock

1+ parts

-

100+ parts

$0.513

1k+ parts

$0.426

10k+ parts

$0.380

61,184

-

$0.513

$0.426

$0.380

Verical

USA . 31,255 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.533

10k+ parts

$0.475

31,255

-

-

$0.533

$0.475

Flip Electronics (Authorized)

USA . 9,534 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

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9,534

-

-

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,142 parts In-Stock

1+ parts

$0.566

100+ parts

-

1k+ parts

-

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1,142

$0.566

-

-

-

Nova Conductors

Japan . 15 parts In-Stock

1+ parts

$0.665

100+ parts

-

1k+ parts

-

10k+ parts

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15

$0.665

-

-

-

Bristol Electronics

USA . 7,674 parts In-Stock

1+ parts

$1.125

100+ parts

$0.416

1k+ parts

$0.292

10k+ parts

-

7,674

$1.125

$0.416

$0.292

-

Chip Stock

USA . 70,000 parts In-Stock

1+ parts

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70,000

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Flip Electronics

USA . 34,534 parts In-Stock

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34,534

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Vyrian

USA . 25,428 parts In-Stock

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25,428

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Component Sense

UK . 20,000 parts In-Stock

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20,000

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Dan-Mar Components

USA . 7,674 parts In-Stock

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7,674

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ACDS - Activité Composants Distribution Service

France . 4,674 parts In-Stock

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4,674

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-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 25,694 parts In-Stock

1+ parts

$0.495

100+ parts

-

1k+ parts

-

10k+ parts

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25,694

$0.495

-

-

-

Corphita

USA . 962 parts In-Stock

1+ parts

$0.536

100+ parts

-

1k+ parts

-

10k+ parts

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962

$0.536

-

-

-

Corohmni

South Africa . 466 parts In-Stock

1+ parts

$0.582

100+ parts

-

1k+ parts

-

10k+ parts

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466

$0.582

-

-

-

Component Stockers USA

USA . 40,797 parts In-Stock

1+ parts

$0.610

100+ parts

$0.570

1k+ parts

$0.520

10k+ parts

$0.520

40,797

$0.610

$0.570

$0.520

$0.520

Argo Parts USA

USA . 4,814 parts In-Stock

1+ parts

$0.665

100+ parts

-

1k+ parts

-

10k+ parts

$0.645

4,814

$0.665

-

-

$0.645

Netroflash

USA . 500 parts In-Stock

1+ parts

$0.665

100+ parts

$0.652

1k+ parts

-

10k+ parts

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500

$0.665

$0.652

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Kepictronics

USA . 195,000 parts In-Stock

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195,000

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Authorized Procurement Solutions

USA . 90,000 parts In-Stock

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90,000

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Continental Prestige Electronics

USA . 45,000 parts In-Stock

1+ parts

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100+ parts

$0.710

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45,000

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$0.710

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QUARKTWIN TECHNOLOGY LTD

USA . 17,570 parts In-Stock

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17,570

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Perfect Parts

USA . 17,385 parts In-Stock

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17,385

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Lixinc

USA . 13,772 parts In-Stock

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13,772

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Microchip USA

USA . 10,357 parts In-Stock

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10,357

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Problanco Electronics

Mexico . 5,619 parts In-Stock

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5,619

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TANS Electronics

Latvia . 4,651 parts In-Stock

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4,651

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SupplyDigital Components

Austria . 4,407 parts In-Stock

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4,407

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Kulean Microsystems

USA . 1,133 parts In-Stock

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1,133

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Supply Digital

USA . 1,077 parts In-Stock

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1,077

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UHIMA Technologies

Türkiye . 565 parts In-Stock

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565

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Overview

Discover the FDZ1323NZ by Onsemi, a top-notch Power Field Effect Transistor designed for switching applications. With high-quality manufacturing from Onsemi, this N-CHANNEL FET offers exceptional performance and reliability. Its common drain configuration with built-in diode ensures efficient power management. Ideal for a wide range of electronic projects, this transistor delivers maximum power dissipation of 2W and operates in enhancement mode. Elevate your designs with the FDZ1323NZ, offering unparalleled value and benefits to customers seeking superior performance in their applications.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes this product lightweight and durable, ideal for various applications.

Polarity or Channel Type: N-CHANNEL

N-channel FETs offer lower resistance and higher efficiency, making them a superior choice for power switching applications.

Configuration: COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE

This configuration allows for efficient power handling and improved reliability in circuit design.

Transistor Application: SWITCHING

Designed specifically for switching applications, this FET offers fast response times and high efficiency.

Surface Mount: YES

The surface mount feature makes it easy to install and saves valuable space on a PCB, making it suitable for compact designs.

Package Shape: RECTANGULAR

The rectangular shape of the package allows for easy integration into circuit layouts, optimizing use of available space.

Terminal Form: BALL

The ball terminal form ensures reliable connections and facilitates soldering, enhancing overall product performance.

Operating Mode: ENHANCEMENT MODE

This mode allows for better control over the FET's conductivity, ensuring precise switching capabilities.

No. of Elements: 2

With two elements, this FET offers flexibility in circuit design and allows for more complex configurations.

No. of Terminals: 6

The six terminals provide ample connection options and enable versatile use in different circuit setups.

Maximum Power Dissipation (Abs): 2 W

The high power dissipation capacity of 2W ensures efficient operation and prevents overheating in demanding applications.

Package Style (Meter): GRID ARRAY

The grid array package style simplifies installation and offers improved thermal performance for enhanced reliability.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

The metal-oxide semiconductor technology used in this FET ensures stable performance and high efficiency in various power applications.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this FET can withstand high temperatures and harsh environments.

Transistor Element Material: SILICON

Silicon transistor element material provides excellent conductivity and reliability, ensuring long-lasting performance.

Minimum Operating Temperature: -55 °C

The low minimum operating temperature of -55°C allows for use in extreme cold conditions without sacrificing performance.

Terminal Finish: TIN SILVER COPPER

The terminal finish of tin, silver, and copper ensures stable connections and prevents corrosion, extending the FET's lifespan.

Terminal Position: BOTTOM

The bottom terminal position simplifies PCB layout and assembly, making it easier to integrate into various electronic designs.

Maximum Time At Peak Reflow Temperature (s): 30

With a maximum time of 30 seconds at peak reflow temperature, this FET can withstand soldering processes without damage.

Peak Reflow Temperature °C: 260

The peak reflow temperature of 260°C ensures proper soldering and connection integrity, enhancing overall product reliability.

Maximum Feedback Capacitance (Crss): 380 pF

The maximum feedback capacitance of 380pF allows for efficient control and stability in high-frequency switching applications.

Technical Specifications

Power Field Effect Transistors (FET) FDZ1323NZ attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Onsemi

Specs

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

380 pF

JESD-30 Code:

R-PBGA-B6

JESD-609 Code:

e1

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

GRID ARRAY

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

2 W

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

FDZ1323NZ Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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