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FDT86256

Onsemi

FDT86256 by Onsemi

FDT86256 by Onsemi is a N-CHANNEL Power FET with PLASTIC/EPOXY package. It has a Max Drain Current of 3A and Max Operating Temperature of 150°C. Ideal for SWITCHING applications, it features a SINGLE configuration with BUILT-IN DIODE and operates in ENHANCEMENT MODE.

Median Price

$0.687

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 14,125 parts In-Stock

1+ parts

-

100+ parts

$0.687

1k+ parts

$0.570

10k+ parts

$0.508

14,125

-

$0.687

$0.570

$0.508

Mouser Electronics

USA . 7,619 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.557

7,619

-

-

-

$0.557

Verical

USA . 5,445 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.713

10k+ parts

$0.635

5,445

-

-

$0.713

$0.635

Element14

Singapore . 916 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$1.150

10k+ parts

$1.120

916

-

-

$1.150

$1.120

Farnell

UK . 871 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.608

10k+ parts

-

871

-

-

$0.608

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,733 parts In-Stock

1+ parts

$0.560

100+ parts

-

1k+ parts

-

10k+ parts

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1,733

$0.560

-

-

-

Nova Conductors

Japan . 870 parts In-Stock

1+ parts

$0.644

100+ parts

-

1k+ parts

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10k+ parts

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870

$0.644

-

-

-

Chip Stock

USA . 41,000 parts In-Stock

1+ parts

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41,000

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Vyrian

USA . 8,167 parts In-Stock

1+ parts

-

100+ parts

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8,167

-

-

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PC Components Company LLC

USA . 1,687 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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1,687

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-

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Bristol Electronics

USA . 1,517 parts In-Stock

1+ parts

-

100+ parts

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1,517

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-

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-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 437 parts In-Stock

1+ parts

$0.471

100+ parts

-

1k+ parts

-

10k+ parts

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437

$0.471

-

-

-

Ampacity Inc.

Singapore . 8,208 parts In-Stock

1+ parts

$0.473

100+ parts

-

1k+ parts

-

10k+ parts

-

8,208

$0.473

-

-

-

Corphita

USA . 1,189 parts In-Stock

1+ parts

$0.531

100+ parts

-

1k+ parts

-

10k+ parts

-

1,189

$0.531

-

-

-

Aranea Global

USA . 1,000 parts In-Stock

1+ parts

$0.631

100+ parts

-

1k+ parts

$0.606

10k+ parts

-

1,000

$0.631

-

$0.606

-

Argo Parts USA

USA . 3,328 parts In-Stock

1+ parts

$0.644

100+ parts

-

1k+ parts

-

10k+ parts

$0.624

3,328

$0.644

-

-

$0.624

Component Stockers USA

USA . 5,808 parts In-Stock

1+ parts

$0.770

100+ parts

$0.760

1k+ parts

$0.570

10k+ parts

-

5,808

$0.770

$0.760

$0.570

-

Continental Prestige Electronics

USA . 3,414 parts In-Stock

1+ parts

$1.310

100+ parts

$0.801

1k+ parts

$0.497

10k+ parts

-

3,414

$1.310

$0.801

$0.497

-

Microchip USA

USA . 4,310 parts In-Stock

1+ parts

$3.903

100+ parts

-

1k+ parts

-

10k+ parts

-

4,310

$3.903

-

-

-

Perfect Parts

USA . 36,596 parts In-Stock

1+ parts

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36,596

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SupplyDigital Components

Austria . 7,918 parts In-Stock

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7,918

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Kulean Microsystems

USA . 4,188 parts In-Stock

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4,188

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Kepictronics

USA . 3,200 parts In-Stock

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3,200

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TANS Electronics

Latvia . 3,160 parts In-Stock

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3,160

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Supply Digital

USA . 2,072 parts In-Stock

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2,072

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Authorized Procurement Solutions

USA . 2,000 parts In-Stock

1+ parts

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100+ parts

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2,000

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Problanco Electronics

Mexico . 1,165 parts In-Stock

1+ parts

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100+ parts

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1,165

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-

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UHIMA Technologies

Türkiye . 765 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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10k+ parts

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765

-

-

-

-

Overview

Unlock the power of innovation with the FDT86256 by Onsemi. Crafted by a trusted manufacturer, this Power Field Effect Transistor (FET) boasts top-quality construction and cutting-edge technology. Ideal for switching applications, this N-CHANNEL transistor offers a single configuration with a built-in diode for added efficiency. With a maximum operating temperature of 150°C and a high power dissipation rating, this transistor provides reliability and performance like no other. Take your projects to new heights with the FDT86256 - where quality meets value.

Feature Benefit Bullets

Package Body Material:

PLASTIC/EPOXY - This material provides durability and thermal stability, making the product suitable for various environments.

Polarity or Channel Type:

N-CHANNEL - Allows for efficient current flow in one direction, enhancing switching performance.

Configuration:

SINGLE WITH BUILT-IN DIODE - Simplifies circuit design and saves space by integrating a diode within the transistor package.

Transistor Application:

SWITCHING - Ideal for applications requiring high-speed switching capabilities.

Surface Mount:

YES - Easy to mount on printed circuit boards, simplifying the assembly process.

Minimum DS Breakdown Voltage:

150 V - Provides a high level of voltage tolerance for reliable operation in demanding scenarios.

Package Shape:

RECTANGULAR - Offers a compact form factor that is easy to integrate into various electronic devices.

Terminal Form:

GULL WING - Facilitates easy soldering and connection to other components.

Operating Mode:

ENHANCEMENT MODE - Enhances control over the switching behavior for improved performance.

Maximum Pulsed Drain Current (IDM):

2 A - Capable of handling high current pulses, suitable for demanding applications.

Avalanche Energy Rating (EAS):

1 mJ - Provides protection against voltage spikes and transient events, ensuring device longevity.

Maximum Drain Current (Abs) (ID):

3 A - Offers high current handling capacity for reliable operation under varying loads.

No. of Terminals:

4 - Simplifies the connection process and allows for easy integration into circuit designs.

Maximum Power Dissipation (Abs):

10 W - Handles high power levels effectively, suitable for power applications.

Package Style (Meter):

SMALL OUTLINE - Compact design for space-efficient PCB layout and system integration.

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR - Provides high performance and efficiency in various applications.

Maximum Operating Temperature:

150 °C - Can withstand high temperatures, suitable for industrial and automotive applications.

Transistor Element Material:

SILICON - Offers high reliability and performance in electronic circuits.

Terminal Finish:

MATTE TIN - Ensures good electrical contact and corrosion resistance for reliable performance.

Maximum Drain Current (ID):

1.2 A - Suitable for applications requiring controlled current flow.

Maximum Drain-Source On Resistance:

0.845 ohm - Low resistance for efficient power transfer in the circuit.

Terminal Position:

DUAL - Simplifies the installation process and allows for versatile circuit configurations.

Case Connection:

DRAIN - Convenient connection point for external components in the circuit.

Maximum Time At Peak Reflow Temperature (s):

30 - Ensures proper soldering and assembly during manufacturing processes.

Peak Reflow Temperature °C:

260 - Compatible with standard reflow soldering processes for easy integration into production lines.

Technical Specifications

Power Field Effect Transistors (FET) FDT86256 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Onsemi

Specs

Avalanche Energy Rating (EAS):

1 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

150 V

Maximum Drain Current (Abs) (ID):

3 A

Maximum Drain Current (ID):

1.2 A

Maximum Drain-Source On Resistance:

.845 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

2 A

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

FDT86256 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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