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FCU850N80Z

Onsemi

FCU850N80Z by Onsemi

FCU850N80Z by Onsemi is a power FET with a min DS breakdown voltage of 800V. It is an N-channel transistor used for switching applications, with a max pulsed drain current of 18A and an avalanche energy rating of 114mJ.

Median Price

$1.398

Lifecycle Status

Suppliers In-Stock

14

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 115 parts In-Stock

1+ parts

$0.655

100+ parts

-

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$0.648

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115

$0.655

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$0.648

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Chip1Stop

Japan . 415 parts In-Stock

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$1.510

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$1.030

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415

$1.510

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$1.030

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Rochester

USA . 9,165 parts In-Stock

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$1.370

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$1.140

10k+ parts

$1.010

9,165

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$1.370

$1.140

$1.010

Verical

USA . 5,546 parts In-Stock

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$1.425

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$1.262

5,546

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$1.262

Farnell

UK . 1,000 parts In-Stock

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$0.882

1,000

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$0.882

DigiKey

USA . 600 parts In-Stock

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$1.710

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600

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$1.710

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Distributors (In-Stock)

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Digiode

USA . 2,053 parts In-Stock

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$0.332

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2,053

$0.332

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Nova Conductors

Japan . 150 parts In-Stock

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$1.119

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150

$1.119

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Vyrian

USA . 1,961 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 1,050 parts In-Stock

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1,050

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Bristol Electronics

USA . 1,050 parts In-Stock

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$1.188

1k+ parts

$1.043

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1,050

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$1.188

$1.043

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Dan-Mar Components

USA . 1,050 parts In-Stock

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1,050

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DigiKey Marketplace

USA . 1,000 parts In-Stock

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Microfarads

USA . 411 parts In-Stock

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411

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Distributors (Availability)

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Ampacity Inc.

Singapore . 2,046 parts In-Stock

1+ parts

$0.297

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2,046

$0.297

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Corphita

USA . 931 parts In-Stock

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$0.314

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931

$0.314

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Corohmni

South Africa . 60 parts In-Stock

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$0.349

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60

$0.349

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Aztec Data Supply Inc.

USA . 2,059 parts In-Stock

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$0.654

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2,059

$0.654

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Argo Parts USA

USA . 1,952 parts In-Stock

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$1.119

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1,952

$1.119

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Netroflash

USA . 100 parts In-Stock

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$1.119

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$1.063

10k+ parts

$1.041

100

$1.119

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$1.063

$1.041

Microchip USA

USA . 4,401 parts In-Stock

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$14.820

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$14.820

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Perfect Parts

USA . 65,520 parts In-Stock

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Metaverse IC Inc.

Canada . 56,986 parts In-Stock

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Kepictronics

USA . 9,700 parts In-Stock

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9,700

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Kulean Microsystems

USA . 7,663 parts In-Stock

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SupplyDigital Components

Austria . 7,131 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 6,527 parts In-Stock

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Authorized Procurement Solutions

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TANS Electronics

Latvia . 3,286 parts In-Stock

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Problanco Electronics

Mexico . 2,396 parts In-Stock

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iodParts Technologies Inc.

India . 1,050 parts In-Stock

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Continental Prestige Electronics

USA . 1,000 parts In-Stock

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$0.882

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1,000

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UHIMA Technologies

Türkiye . 322 parts In-Stock

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322

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Supply Digital

USA . 265 parts In-Stock

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265

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Overview

Looking for a reliable and high-quality power field effect transistor? Look no further than the FCU850N80Z by Onsemi. As a trusted manufacturer in the industry, Onsemi delivers products that are built to last and perform at their best. The FCU850N80Z is perfect for switching applications, offering enhanced performance and efficiency. With its built-in diode and N-channel configuration, this transistor provides seamless operation and improved functionality. Whether you need it for industrial automation, power supplies, or motor control, the FCU850N80Z offers unmatched value and benefits. Say goodbye to power fluctuations and hello to reliability with the FCU850N80Z by Onsemi.

Feature Benefit Bullets

Package Body Material:

PLASTIC/EPOXY - This durable material ensures the product's longevity and ability to withstand various conditions.

Polarity or Channel Type:

N-CHANNEL - The N-channel design allows for efficient and effective switching operations.

Configuration:

SINGLE WITH BUILT-IN DIODE - The built-in diode simplifies circuit design and enhances the product's overall functionality.

Transistor Application:

SWITCHING - Designed specifically for switching applications, ensuring reliable performance in this area.

Minimum DS Breakdown Voltage:

800 V - With a high breakdown voltage, this product can handle high voltage applications and provides added safety.

Package Shape:

RECTANGULAR - The rectangular shape allows for easy installation and placement in circuits.

Terminal Form:

THROUGH-HOLE - Allows for convenient soldering and secure connections.

Operating Mode:

ENHANCEMENT MODE - The enhancement mode ensures efficient operation in a wide range of applications.

No. of Elements:

1 - This single element design simplifies circuit design and reduces complexity.

Maximum Pulsed Drain Current (IDM):

18 A - With a high maximum pulsed drain current, this product can handle heavy loads and demanding tasks.

Avalanche Energy Rating (EAS):

114 mJ - The high avalanche energy rating provides added protection during extreme conditions.

Maximum Drain Current (Abs) (ID):

6 A - The product's ability to handle a maximum drain current of 6 A makes it suitable for various applications.

No. of Terminals:

3 - The three terminals offer flexibility in circuit connections and enable versatile usage.

Maximum Power Dissipation (Abs):

75 W - With a high power dissipation rating, this product can handle substantial power without overheating.

Package Style (Meter):

IN-LINE - The in-line package style makes the product compact and easy to integrate into different setups.

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR - Utilizing metal-oxide semiconductor technology, this product offers reliable performance and efficient energy usage.

Maximum Operating Temperature:

150 °C - The ability to operate at high temperatures makes this product suitable for demanding environments.

Transistor Element Material:

SILICON - Made with silicon, this product provides excellent conductivity and durability.

Maximum Turn On Time (ton):

72 ns - With a quick turn-on time, this product ensures fast and efficient response in switching operations.

Minimum Operating Temperature:

55 °C - The ability to operate in low temperatures makes this product suitable for a wide range of environments.

Maximum Turn Off Time (toff):

109 ns - The quick turn-off time ensures efficient switching and minimizes power loss.

Terminal Finish:

MATTE TIN - The matte tin terminal finish provides corrosion resistance and reliable electrical connections.

Maximum Drain-Source On Resistance:

0.85 ohm - With a low drain-source on resistance, this product offers efficient conduction and minimizes power losses.

Terminal Position:

SINGLE - The single terminal position simplifies circuit connections and enhances ease of use.

Technical Specifications

Power Field Effect Transistors (FET) FCU850N80Z attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Onsemi

Specs

Avalanche Energy Rating (EAS):

114 mJ

Minimum DS Breakdown Voltage:

800 V

Maximum Drain Current (Abs) (ID):

6 A

Maximum Drain Current (ID):

6 A

Maximum Drain-Source On Resistance:

.85 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-251AA

JESD-30 Code:

R-PSIP-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

18 A

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum Turn Off Time (toff):

109 ns

Maximum Turn On Time (ton):

72 ns

Trade Compliance

FCU850N80Z Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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