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ESD9L5.0ST5GH

Onsemi

ESD9L5.0ST5GH by Onsemi

ESD9L5.0ST5GH by Onsemi is a TRANS VOLTAGE SUPPRESSOR DIODE with 5V peak reverse voltage and 7.8V clamping voltage. It's surface mountable with TIN finish, ideal for transient suppression applications in electronics to protect against voltage spikes.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 2,263 parts In-Stock

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Digiode

USA . 745 parts In-Stock

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Distributors (Availability)

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Native Components

USA . 40 parts In-Stock

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$0.152

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$0.146

40

$0.152

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$0.146

Northwest PG Solutions

USA . 1,242 parts In-Stock

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$0.167

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$0.147

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$0.167

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$0.147

Kepictronics

USA . 38,520 parts In-Stock

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38,520

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Kulean Microsystems

USA . 5,613 parts In-Stock

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SupplyDigital Components

Austria . 4,956 parts In-Stock

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TANS Electronics

Latvia . 4,445 parts In-Stock

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Problanco Electronics

Mexico . 2,812 parts In-Stock

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Corphita

USA . 1,259 parts In-Stock

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Corohmni

South Africa . 344 parts In-Stock

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UHIMA Technologies

Türkiye . 310 parts In-Stock

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Overview

Discover the ESD9L5.0ST5GH by Onsemi, a cutting-edge transient suppression device that guarantees top-notch quality and reliability. Manufactured by Onsemi, a trusted industry leader, this diode offers unparalleled protection against voltage spikes, making it ideal for a wide range of applications. From safeguarding sensitive electronics to ensuring uninterrupted power supply, this surface-mount device is a must-have for anyone looking for peace of mind. Experience the value and benefits that only Onsemi can deliver with the ESD9L5.0ST5GH.

Feature Benefit Bullets

Surface Mount: YES

Surface mount technology allows for easy and efficient installation, making this transient suppression device convenient to use in various applications.

Terminal Finish: TIN

TIN terminal finish provides excellent solderability and corrosion resistance, ensuring reliable and long-lasting connections.

Peak Reflow Temperature °C: 260

With a peak reflow temperature of 260 °C, this transient suppression device can withstand high-temperature reflow soldering processes, making it suitable for mass production.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

The use of TRANS VOLTAGE SUPPRESSOR DIODEs ensures effective transient voltage suppression, safeguarding sensitive electronics from voltage spikes and surges.

Maximum Repetitive Peak Reverse Voltage: 5 V

The maximum repetitive peak reverse voltage of 5V indicates that this device is capable of handling transient events and protecting downstream components within a safe operating range.

Polarity: UNIDIRECTIONAL

The unidirectional polarity of this device ensures that it suppresses transient voltages in one direction, offering focused protection to specific circuit elements.

Maximum Clamping Voltage: 7.8 V

The maximum clamping voltage of 7.8V indicates the level to which the device limits the voltage during transient events, effectively protecting connected equipment from damage.

Technical Specifications

Transient Suppression Devices ESD9L5.0ST5GH attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Maximum Clamping Voltage:

7.8 V

JESD-609 Code:

e3

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Repetitive Peak Reverse Voltage:

5 V

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Terminal Finish:

TIN

Trade Compliance

ESD9L5.0ST5GH Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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