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ESD9D5.0ST5G

Onsemi

ESD9D5.0ST5G by Onsemi

ESD9D5.0ST5G by Onsemi is a bidirectional TRANS VOLTAGE SUPPRESSOR DIODE with a 5V max repetitive peak reverse voltage and 13.5V max clamping voltage. It is designed for transient suppression applications, featuring avalanche technology and matte tin terminal finish for surface mount assembly.

Median Price

$0.367

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 5,122 parts In-Stock

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$0.367

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Flip Electronics (Authorized)

USA . 7,500 parts In-Stock

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Verical

USA . 6,059 parts In-Stock

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Nova Conductors

Japan . 61 parts In-Stock

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$0.127

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61

$0.127

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Digiode

USA . 698 parts In-Stock

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$0.349

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698

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Chip Stock

USA . 15,500 parts In-Stock

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Flip Electronics

USA . 10,150 parts In-Stock

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Vyrian

USA . 5,887 parts In-Stock

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Cyclops Electronics Ltd

UK . 3,988 parts In-Stock

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Corohmni

South Africa . 340 parts In-Stock

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$0.124

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340

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Corphita

USA . 1,804 parts In-Stock

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$0.330

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Kepictronics

USA . 38,000 parts In-Stock

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Authorized Procurement Solutions

USA . 25,000 parts In-Stock

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Lixinc

USA . 18,910 parts In-Stock

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Perfect Parts

USA . 17,920 parts In-Stock

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Eastek

USA . 8,000 parts In-Stock

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GreenTree Electronics

Israel . 8,000 parts In-Stock

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Kulean Microsystems

USA . 7,390 parts In-Stock

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TANS Electronics

Latvia . 5,800 parts In-Stock

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Problanco Electronics

Mexico . 3,352 parts In-Stock

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A-Z Elektronik GmbH

Germany . 2,955 parts In-Stock

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Alle Elektronik GmbH

Germany . 1,970 parts In-Stock

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SupplyDigital Components

Austria . 1,612 parts In-Stock

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UHIMA Technologies

Türkiye . 748 parts In-Stock

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Overview

Enhance the reliability of your electronic devices with the ESD9D5.0ST5G by Onsemi. Manufactured by a trusted brand in the industry, this transient suppression device offers superior protection against voltage spikes and surges. Ideal for a wide range of applications, this surface mount diode provides peace of mind for your sensitive electronics. Experience the value and benefits of Onsemi's advanced technology, ensuring your devices stay safe and secure. Trust Onsemi to deliver quality products that exceed your expectations.

Feature Benefit Bullets

Surface Mount: YES

Surface mount design makes this product easy to install and saves space on the circuit board.

Nominal Breakdown Voltage: 5.4 V

The high breakdown voltage helps protect sensitive electronic components from voltage spikes and surges.

Terminal Finish: MATTE TIN

Matte tin finish provides good solderability and durability for long-lasting use.

Maximum Time At Peak Reflow Temperature (s): 30

With a maximum time at peak reflow temperature of 30 seconds, this product can withstand reflow soldering processes without damage.

Peak Reflow Temperature °C: 260

The high peak reflow temperature ensures that the product can withstand the heat of reflow soldering without compromising its performance.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

The trans voltage suppressor diode technology helps in quickly conducting excess voltage away from the circuit, protecting connected devices.

Technology: AVALANCHE

The avalanche technology allows for quick response to voltage spikes and surges, providing effective transient suppression.

Maximum Repetitive Peak Reverse Voltage: 5 V

With a maximum repetitive peak reverse voltage of 5V, this product is suitable for protecting low-voltage electronic devices.

Polarity: BIDIRECTIONAL

The bidirectional polarity ensures that the device can protect against voltage spikes in both directions, making it versatile for different applications.

Maximum Clamping Voltage: 13.5 V

The maximum clamping voltage of 13.5V indicates the level at which the device will conduct excess voltage away from the circuit, providing reliable protection.

Diode Element Material: SILICON

The use of silicon as the diode element material ensures high performance and durability in transient suppression applications.

Technical Specifications

Transient Suppression Devices ESD9D5.0ST5G attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Nominal Breakdown Voltage:

5.4 V

Maximum Clamping Voltage:

13.5 V

Diode Element Material:

SILICON

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Peak Reflow Temperature (C):

260

Polarity:

BIDIRECTIONAL

Maximum Repetitive Peak Reverse Voltage:

5 V

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

MATTE TIN

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

ESD9D5.0ST5G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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