Loading...

EMF23XV6T5G

Onsemi

EMF23XV6T5G by Onsemi

The Onsemi EMF23XV6T5G is a Small Signal BJT with NPN and PNP polarity, 2 elements with built-in resistor. It has a max collector-emitter voltage of 50V, max collector current of 0.1A, and transition frequency of 140MHz. Ideal for applications requiring high-frequency switching in compact electronic devices.

Median Price

$0.064

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 88,000 parts In-Stock

1+ parts

-

100+ parts

$0.066

1k+ parts

$0.055

10k+ parts

$0.049

88,000

-

$0.066

$0.055

$0.049

Verical

USA . 88,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.061

88,000

-

-

-

$0.061

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 637 parts In-Stock

1+ parts

$0.047

100+ parts

-

1k+ parts

-

10k+ parts

-

637

$0.047

-

-

-

Digiode

USA . 398 parts In-Stock

1+ parts

$0.051

100+ parts

-

1k+ parts

-

10k+ parts

-

398

$0.051

-

-

-

DigiKey Marketplace

USA . 88,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.060

10k+ parts

-

88,000

-

-

$0.060

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 206 parts In-Stock

1+ parts

$0.047

100+ parts

-

1k+ parts

-

10k+ parts

-

206

$0.047

-

-

-

Corphita

USA . 393 parts In-Stock

1+ parts

$0.049

100+ parts

-

1k+ parts

-

10k+ parts

-

393

$0.049

-

-

-

Native Components

USA . 194 parts In-Stock

1+ parts

$0.381

100+ parts

-

1k+ parts

-

10k+ parts

$0.366

194

$0.381

-

-

$0.366

Northwest PG Solutions

USA . 1,894 parts In-Stock

1+ parts

$0.419

100+ parts

-

1k+ parts

-

10k+ parts

$0.369

1,894

$0.419

-

-

$0.369

Continental Prestige Electronics

USA . 88,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.055

10k+ parts

-

88,000

-

-

$0.055

-

QUARKTWIN TECHNOLOGY LTD

USA . 29,582 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

29,582

-

-

-

-

SupplyDigital Components

Austria . 3,746 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,746

-

-

-

-

Kulean Microsystems

USA . 2,862 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,862

-

-

-

-

TANS Electronics

Latvia . 799 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

799

-

-

-

-

Problanco Electronics

Mexico . 640 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

640

-

-

-

-

UHIMA Technologies

Türkiye . 577 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

577

-

-

-

-

Overview

Unlock the power of innovation with the EMF23XV6T5G by Onsemi, a cutting-edge Small Signal Bipolar Junction Transistor that delivers superior performance and reliability. Manufactured by Onsemi, a leader in semiconductor technology, this NPN and PNP transistor boasts a compact design with built-in resistors for seamless integration into various applications. With a maximum collector-emitter voltage of 50V and a nominal transition frequency of 140 MHz, this transistor offers customers exceptional value and efficiency. Experience the difference with the EMF23XV6T5G and elevate your projects to new heights.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protects the transistor from external elements, ensuring a longer lifespan.

Polarity or Channel Type: NPN AND PNP

Offers versatility as it can be used in both NPN and PNP configurations, making it suitable for a variety of circuit designs.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

The built-in resistor simplifies circuit design and saves space, making it a convenient option for compact applications.

Surface Mount: YES

Allows for easy and efficient PCB assembly, suitable for automated manufacturing processes.

Package Shape: RECTANGULAR

Facilitates easy placement and soldering on the PCB, enhancing overall manufacturing efficiency.

Maximum Power Dissipation (Abs): 0.5 W

With a relatively high power dissipation rating, this transistor can handle moderate power levels, suitable for various applications.

Minimum DC Current Gain (hFE): 35

Ensures consistent and reliable amplification of current within the specified range, contributing to stable circuit performance.

Maximum Collector-Emitter Voltage: 50 V

Provides a safe operating margin for voltage levels, preventing damage to the transistor in case of voltage spikes.

Maximum Collector Current (IC): 0.1 A

Capable of handling moderate current levels, making it suitable for low to medium power applications.

Nominal Transition Frequency (fT): 140 MHz

Offers high frequency performance, suitable for applications requiring fast switching speeds or high-frequency signal amplification.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) EMF23XV6T5G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT-IN BIAS RESISTOR RATIO IS 1

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

35

JESD-30 Code:

R-PDSO-F6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

EMF23XV6T5G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 7