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EMF23XV6T5

Onsemi

EMF23XV6T5 by Onsemi

The Onsemi EMF23XV6T5 is a Small Signal BJT with NPN and PNP polarity, 2 elements with built-in resistor. It has a max collector-emitter voltage of 50V, max collector current of 0.1A, and transition frequency of 140MHz. Ideal for applications requiring low power dissipation in compact designs like consumer electronics.

Median Price

$0.061

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 96,000 parts In-Stock

1+ parts

-

100+ parts

$0.066

1k+ parts

$0.055

10k+ parts

$0.049

96,000

-

$0.066

$0.055

$0.049

Avnet

USA . 96,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.060

10k+ parts

$0.050

96,000

-

-

$0.060

$0.050

Verical

USA . 96,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.061

96,000

-

-

-

$0.061

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 201 parts In-Stock

1+ parts

$0.048

100+ parts

-

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-

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201

$0.048

-

-

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Digiode

USA . 1,496 parts In-Stock

1+ parts

$0.051

100+ parts

-

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1,496

$0.051

-

-

-

DigiKey Marketplace

USA . 96,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.060

10k+ parts

-

96,000

-

-

$0.060

-

Chip Stock

USA . 51,000 parts In-Stock

1+ parts

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51,000

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 338 parts In-Stock

1+ parts

$0.048

100+ parts

-

1k+ parts

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338

$0.048

-

-

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Corphita

USA . 2,217 parts In-Stock

1+ parts

$0.049

100+ parts

-

1k+ parts

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10k+ parts

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2,217

$0.049

-

-

-

Native Components

USA . 637 parts In-Stock

1+ parts

$0.120

100+ parts

-

1k+ parts

-

10k+ parts

$0.115

637

$0.120

-

-

$0.115

Northwest PG Solutions

USA . 546 parts In-Stock

1+ parts

$0.132

100+ parts

-

1k+ parts

-

10k+ parts

$0.116

546

$0.132

-

-

$0.116

Continental Prestige Electronics

USA . 96,000 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

$0.055

10k+ parts

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96,000

-

-

$0.055

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QUARKTWIN TECHNOLOGY LTD

USA . 24,288 parts In-Stock

1+ parts

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24,288

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SupplyDigital Components

Austria . 4,870 parts In-Stock

1+ parts

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4,870

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TANS Electronics

Latvia . 2,644 parts In-Stock

1+ parts

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2,644

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Kulean Microsystems

USA . 1,814 parts In-Stock

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1,814

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Problanco Electronics

Mexico . 1,398 parts In-Stock

1+ parts

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100+ parts

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1,398

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UHIMA Technologies

Türkiye . 300 parts In-Stock

1+ parts

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300

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Overview

Unlock the potential of your electronics with the EMF23XV6T5 by Onsemi. Designed with precision and reliability, this small signal bipolar junction transistor offers seamless performance in a variety of applications. Whether you're looking to amplify signals or control currents, this NPN and PNP transistor with built-in resistor elements is the perfect choice. With a maximum collector-emitter voltage of 50V and a nominal transition frequency of 140MHz, this product delivers value and efficiency like no other. Trust Onsemi to bring innovation and quality to your projects with the EMF23XV6T5.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for a variety of applications.

Polarity or Channel Type: NPN AND PNP

Offers versatility as it can be used with both NPN and PNP configurations.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

Contains built-in resistors which can simplify circuit design and reduce component count.

Surface Mount: YES

Allows for easy and efficient PCB assembly with surface mount technology.

Maximum Power Dissipation (Abs): 0.5 W

Can handle up to 0.5 watts of power, suitable for low power applications.

Package Shape: RECTANGULAR

Compact and space-saving design for easy integration into circuits.

Minimum DC Current Gain (hFE): 35

Ensures reliable amplification of signals with a minimum gain of 35.

Maximum Collector-Emitter Voltage: 50 V

Can withstand up to 50 volts, making it suitable for various voltage applications.

Maximum Collector Current (IC): 0.1 A

Capable of handling up to 0.1 ampere of current, suitable for low current applications.

Nominal Transition Frequency (fT): 140 MHz

Offers high frequency response for fast switching and amplification applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) EMF23XV6T5 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT-IN BIAS RESISTOR RATIO IS 1

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

35

JESD-30 Code:

R-PDSO-F6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

EMF23XV6T5 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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