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CAT6221-MGTD-GT3

Onsemi

CAT6221-MGTD-GT3 by Onsemi

CAT6221-MGTD-GT3 by Onsemi is a Fixed Positive Multiple Output LDO Regulator with 2 outputs. It has a Max Dropout Voltage of 0.35 V, operating temperature range from -40 to 125 °C, and a package style of Small Outline, Very Thin Profile. Ideal for applications requiring precise voltage regulation in compact spaces.

Median Price

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Lifecycle Status

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2

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1k+

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Digiode

USA . 942 parts In-Stock

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Native Components

USA . 145 parts In-Stock

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$1.635

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Northwest PG Solutions

USA . 1,173 parts In-Stock

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$1.798

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Ampacity Inc.

Singapore . 1,141 parts In-Stock

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$11.500

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Component Stockers USA

USA . 744 parts In-Stock

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$99.990

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QUARKTWIN TECHNOLOGY LTD

USA . 28,567 parts In-Stock

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Metaverse IC Inc.

Canada . 8,000 parts In-Stock

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Problanco Electronics

Mexico . 5,735 parts In-Stock

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SupplyDigital Components

Austria . 5,511 parts In-Stock

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Microchip USA

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A-Z Elektronik GmbH

Germany . 4,560 parts In-Stock

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Authorized Procurement Solutions

USA . 4,000 parts In-Stock

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Alle Elektronik GmbH

Germany . 3,040 parts In-Stock

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TANS Electronics

Latvia . 2,570 parts In-Stock

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Corphita

USA . 1,106 parts In-Stock

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UHIMA Technologies

Türkiye . 503 parts In-Stock

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Kulean Microsystems

USA . 392 parts In-Stock

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Corohmni

South Africa . 95 parts In-Stock

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Kepictronics

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Overview

Enhance your electronic projects with the CAT6221-MGTD-GT3 by Onsemi. Crafted with precision and expertise, this Fixed Regulator - Positive Multiple Output LDO offers unmatched quality and reliability. Ideal for a variety of applications, this product ensures stable voltage output and optimal performance. Experience the value and benefits of this regulator with its efficient design and advanced technology. Trust Onsemi to deliver cutting-edge solutions for your engineering needs. Upgrade your projects today with the CAT6221-MGTD-GT3.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the internal components of the regulator.

Maximum Dropout Voltage-1: 2.35 V

Allows for stable output even when the input voltage drops by up to 2.35 V.

Surface Mount: YES

Facilitates easy installation and reduces the need for additional components.

Operating Temperature (TJ-Max): 125 °C

Can operate effectively in high-temperature environments without compromising performance.

Technology: CMOS

Provides efficient power regulation with minimal power consumption.

Nominal Output Voltage-1: 2.8 V

Delivers a consistent output voltage of 2.8 V for reliable performance.

Adjustability: FIXED

Ensures a stable output voltage without the need for manual adjustments.

Maximum Output Current-1: 0.3 A

Capable of supplying a maximum current of 0.3 A for powering multiple devices simultaneously.

Technical Specifications

Fixed Regulators - Positive Multiple Output LDO CAT6221-MGTD-GT3 attributes and parameters. Explore more Fixed Regulators - Positive Multiple Output LDO devices from Onsemi

Specs

Adjustability:

FIXED

Maximum Dropout Voltage-1:

.35 V

Nominal Dropout Voltage-1:

.21 V

Maximum Dropout Voltage-2:

.35 V

Maximum Input Voltage Absolute:

Maximum Input Voltage:

5.5 V

Minimum Input Voltage:

2.3 V

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e4

Length:

2.9 mm

Maximum Line Regulation:

.0194 %

Maximum Load Regulation:

.056 %

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Outputs:

2

No. of Terminals:

6

Operating Temperature (TJ-Max):

125 Cel

Operating Temperature (TJ-Min):

-40 Cel

Maximum Output Current-1:

.3 A

Maximum Output Current-2:

.3 A

Maximum Output Voltage-1:

2.856 V

Minimum Output Voltage-1:

2.744 V

Nominal Output Voltage-1:

2.8 V

Maximum Output Voltage-2:

1.836 V

Minimum Output Voltage-2:

1.764 V

Nominal Output Voltage-2:

1.8 V

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP6,.11,37

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH

Packing Method:

TR

Peak Reflow Temperature (C):

260

Qualification Status:

Not Qualified

Maximum Seated Height:

1 mm

Sub-Category:

Other Regulators

Surface Mount:

YES

Technology:

CMOS

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.95 mm

Terminal Position:

DUAL

Maximum Voltage Tolerance:

2 %

Width:

1.6 mm

Trade Compliance

CAT6221-MGTD-GT3 Regulators trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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