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CAT6221-MFTD-GT3

Onsemi

CAT6221-MFTD-GT3 by Onsemi

CAT6221-MFTD-GT3 by Onsemi is a Fixed Positive Multiple Output LDO Regulator with 2 outputs. It offers a Max Dropout Voltage of 0.35 V, operating temperature range from -40 to 125 °C, and a package style of Small Outline, Very Thin Profile. Ideal for applications requiring precise voltage regulation in compact spaces.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 1,807 parts In-Stock

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Vyrian

USA . 192 parts In-Stock

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Native Components

USA . 524 parts In-Stock

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$1.161

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Northwest PG Solutions

USA . 1,572 parts In-Stock

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TANS Electronics

Latvia . 7,854 parts In-Stock

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Kulean Microsystems

USA . 5,661 parts In-Stock

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SupplyDigital Components

Austria . 4,463 parts In-Stock

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Problanco Electronics

Mexico . 3,076 parts In-Stock

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Corphita

USA . 2,360 parts In-Stock

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UHIMA Technologies

Türkiye . 626 parts In-Stock

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Corohmni

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Microchip USA

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Overview

Enhance the performance of your electronic devices with the CAT6221-MFTD-GT3 by Onsemi, a top-quality fixed positive multiple output LDO regulator. Crafted with precision and expertise, this product offers unparalleled reliability and efficiency in various applications. From enhancing power management to improving overall system performance, this regulator delivers exceptional value and benefits to customers seeking superior quality components. Trust Onsemi for cutting-edge technology and innovation that drives your projects to success.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material makes the package lightweight and durable, ideal for portable applications.

Maximum Dropout Voltage-2: 1.35 V

A low maximum dropout voltage ensures efficient operation and minimal power loss across the regulator.

Surface Mount: YES

The surface mount capability allows for easy and efficient PCB assembly, saving time and cost in production.

Operating Temperature (TJ-Max): 125 °C

With a high maximum operating temperature, this regulator can operate reliably in a wide range of environments.

Technology: CMOS

The CMOS technology offers low power consumption and high efficiency, making it suitable for battery-powered devices.

Nominal Output Voltage-2: 1.5 V

The stable nominal output voltage ensures consistent and reliable power supply to connected devices.

Terminal Form: GULL WING

The gull wing terminal form provides strong mechanical stability and ease of soldering during assembly.

Operating Temperature (TJ-Min): -40 °C

With a low minimum operating temperature, this regulator can withstand extreme cold conditions without sacrificing performance.

Maximum Voltage Tolerance: 2 %

The tight voltage tolerance ensures precise voltage regulation, preventing damage to sensitive components.

Terminal Pitch: 0.95 mm

The narrow terminal pitch allows for high-density mounting on PCBs, conserving space and reducing footprint.

Regulator Type: FIXED POSITIVE MULTIPLE OUTPUT LDO REGULATOR

This regulator type provides multiple stable and regulated output voltages, making it suitable for powering multiple devices in a single system.

Maximum Input Voltage Absolute: 6.5 V

The high maximum input voltage absolute allows for flexibility in power supply options, accommodating a wide range of input sources.

Technical Specifications

Fixed Regulators - Positive Multiple Output LDO CAT6221-MFTD-GT3 attributes and parameters. Explore more Fixed Regulators - Positive Multiple Output LDO devices from Onsemi

Specs

Adjustability:

FIXED

Maximum Dropout Voltage-1:

.35 V

Nominal Dropout Voltage-1:

.21 V

Maximum Dropout Voltage-2:

.35 V

Maximum Input Voltage Absolute:

Maximum Input Voltage:

5.5 V

Minimum Input Voltage:

2.3 V

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e4

Length:

2.9 mm

Maximum Line Regulation:

.019 %

Maximum Load Regulation:

.056 %

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Outputs:

2

No. of Terminals:

6

Operating Temperature (TJ-Max):

125 Cel

Operating Temperature (TJ-Min):

-40 Cel

Maximum Output Current-1:

.3 A

Maximum Output Current-2:

.3 A

Maximum Output Voltage-1:

2.856 V

Minimum Output Voltage-1:

2.744 V

Nominal Output Voltage-1:

2.8 V

Maximum Output Voltage-2:

1.53 V

Minimum Output Voltage-2:

1.47 V

Nominal Output Voltage-2:

1.5 V

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP6,.11,37

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH

Packing Method:

TR

Peak Reflow Temperature (C):

260

Qualification Status:

Not Qualified

Maximum Seated Height:

1 mm

Sub-Category:

Other Regulators

Surface Mount:

YES

Technology:

CMOS

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.95 mm

Terminal Position:

DUAL

Maximum Voltage Tolerance:

2 %

Width:

1.6 mm

Trade Compliance

CAT6221-MFTD-GT3 Regulators trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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