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CAT34TS02HU4-GT4

Onsemi

CAT34TS02HU4-GT4 by Onsemi

CAT34TS02HU4-GT4 by Onsemi is a 12-bit temperature sensor with a supply voltage range of 2.97V to 3.63V. It features a CMOS technology, operates b/w -20 °C to 125°C, and has an output interface type of 2-wire interface. Ideal for applications requiring precise temperature monitoring in compact spaces.

Median Price

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Lifecycle Status

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Vyrian

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Digiode

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Native Components

USA . 834 parts In-Stock

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SupplyDigital Components

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Problanco Electronics

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Northwest PG Solutions

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Corphita

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Kulean Microsystems

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UHIMA Technologies

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Overview

Enhance your temperature sensing experience with the CAT34TS02HU4-GT4 by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality temperature sensors that are reliable and accurate. Ideal for a wide range of applications, this sensor provides precise temperature readings with ease. Say goodbye to guesswork and hello to efficient monitoring with this advanced sensor. Upgrade your systems today with the CAT34TS02HU4-GT4 and experience the benefits of reliable temperature control like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides durability and resistance to outside elements, making it suitable for various applications.

Maximum Supply Voltage: 3.63 V

Higher maximum supply voltage allows for flexibility in power input, ensuring stability and accuracy of temperature readings.

No. of Bits: 12

High resolution with 12 bits ensures precise temperature measurements for accurate control and monitoring.

Body Width: 2 inch

Compact body width of 2 inches allows for easy integration and installation in tight spaces.

Power Supplies (V): 3.3

Stable power supply voltage of 3.3V ensures consistent performance and reliable temperature sensing.

Sensors or Transducers Type: TEMPERATURE SENSOR, SWITCH/DIGITAL OUTPUT, SERIAL

Versatile sensor types offer multiple output options, including digital and serial communication, giving flexibility in connecting to different systems.

No. of Terminals: 8

Multiple terminals provide easy connectivity and secure attachment, enhancing the overall reliability of the sensor.

Body Height: 0.5 mm

Low body height of 0.5mm allows for sleek and compact design, suitable for space-constrained applications.

Package Shape or Style: RECTANGULAR

Rectangular package shape offers simplicity in mounting and handling, making it user-friendly.

Minimum Supply Voltage: 2.97 V

Low minimum supply voltage allows for energy efficiency and extends the operating range of the sensor.

Maximum Operating Temperature: 125 °C

High maximum operating temperature of 125 °C enables reliable performance in extreme temperature conditions.

Minimum Operating Temperature: -20 °C

Wide range of minimum operating temperature from -20 °C ensures functionality in various environments.

Terminal Finish: NICKEL PALLADIUM GOLD

Nickel Palladium Gold terminal finish provides good conductivity and corrosion resistance, enhancing the overall reliability and longevity of the sensor.

Maximum Operating Current: 0.5 mA

Low maximum operating current of 0.5mA ensures low power consumption and efficient operation of the sensor.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making the sensor suitable for battery-powered applications.

Body Length/Diameter: 3 mm

Compact body length/diameter of 3mm allows for easy integration and space-saving installation.

Termination Type: SOLDER

Solder termination provides secure and reliable connections, ensuring stable performance of the sensor.

Output Interface Type: 2-WIRE INTERFACE

2-wire interface simplifies the connection process and allows for easy integration with various systems.

Mounting Feature: SURFACE MOUNT

Surface mount feature offers easy and secure installation on circuit boards, enhancing the overall reliability of the sensor.

Technical Specifications

Temperature Sensors CAT34TS02HU4-GT4 attributes and parameters. Explore more Temperature Sensors devices from Onsemi

Specs

Body Width:

2 inch

Body Height:

.5 mm

Body Length/Diameter:

3 mm

JESD-609 Code:

e4

Mounting Feature:

No. of Bits:

12

No. of Terminals:

8

Maximum Operating Current:

.5 mA

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-20 Cel

Output Interface Type:

2-WIRE INTERFACE

Package Body Material:

PLASTIC/EPOXY

Package Equivalence Code:

SOLCC8,.12,20

Package Shape or Style:

Power Supplies (V):

3.3

Sub-Category:

Other Sensors/Transducers

Maximum Supply Voltage:

3.63 V

Minimum Supply Voltage:

2.97 V

Technology:

CMOS

Terminal Finish:

NICKEL PALLADIUM GOLD

Termination Type:

SOLDER

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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