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CAT28C256GI15

Onsemi

CAT28C256GI15 by Onsemi

CAT28C256GI15 by Onsemi is a 32Kx8 EEPROM with 100,000 write/erase cycles. Operating at 5V, it has a max access time of 150ns and supports asynchronous mode. Ideal for industrial applications requiring reliable non-volatile memory storage in a compact chip carrier package.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 784 parts In-Stock

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Vyrian

USA . 753 parts In-Stock

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Native Components

USA . 391 parts In-Stock

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$0.103

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Northwest PG Solutions

USA . 1,439 parts In-Stock

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Problanco Electronics

Mexico . 6,046 parts In-Stock

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Kulean Microsystems

USA . 5,795 parts In-Stock

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SupplyDigital Components

Austria . 4,865 parts In-Stock

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Glotronic Ltd.

UK . 3,700 parts In-Stock

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TANS Electronics

Latvia . 1,876 parts In-Stock

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Corphita

USA . 1,168 parts In-Stock

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UHIMA Technologies

Türkiye . 776 parts In-Stock

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Microchip USA

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Corohmni

South Africa . 226 parts In-Stock

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Kepictronics

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Overview

Unlock endless possibilities with the CAT28C256GI15 EEPROM by Onsemi. This high-quality memory chip offers reliable performance and durability, making it ideal for a wide range of industrial applications. With a 32KX8 organization and 100,000 write/erase cycles, this chip guarantees exceptional value and long-lasting functionality. Trust Onsemi to deliver cutting-edge technology that meets your needs seamlessly. Elevate your projects with the CAT28C256GI15 and experience the difference in performance and efficiency.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable, ideal for portable devices.

Surface Mount: YES

Surface mount feature allows for easy installation on PCBs, saving space and streamlining the manufacturing process.

Operating Mode: ASYNCHRONOUS

Asynchronous operation offers flexibility and versatility in data transfer, allowing for efficient communication with other components.

Nominal Supply Voltage / Vsup (V): 5

Operates at a standard voltage level of 5V, making it compatible with most systems and ensuring reliable performance.

No. of Terminals: 32

Having 32 terminals provides ample connectivity options and versatility in system integration.

Maximum Operating Temperature: 85 °C

Can operate at high temperatures, suitable for industrial applications where heat resistance is required.

Organization: 32KX8

Organized in a 32Kx8 configuration, offering a balance between storage capacity and data retrieval efficiency.

Minimum Operating Temperature: -40 °C

Capable of functioning in extremely low temperatures, making it suitable for a wide range of environments.

Package Style (Meter): CHIP CARRIER

The chip carrier package style offers a compact form factor, ideal for space-constrained applications.

Page Size (words): 64

With a page size of 64 words, enables efficient data transfer and storage management.

Technology: CMOS

Built on CMOS technology, providing low power consumption and high speed operation.

Endurance: 100000 Write/Erase Cycles

High endurance level ensures longevity and reliability in data storage and retrieval.

Memory Density: 262144 bit

High memory density offers ample storage capacity for data-intensive applications.

Data Polling: YES

Supports data polling feature for efficient data transfer and management.

Technical Specifications

EEPROM CAT28C256GI15 attributes and parameters. Explore more EEPROM devices from Onsemi

Specs

Maximum Access Time:

150 ns

Command User Interface:

NO

Data Polling:

YES

Endurance:

100000 Write/Erase Cycles

JESD-30 Code:

R-PQCC-J32

JESD-609 Code:

e3

Length:

13.965 mm

Memory Density:

262144 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

32

No. of Words:

32768 words

No. of Words Code:

32K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

32KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LDCC32,.5X.6

Package Shape:

Package Style (Meter):

CHIP CARRIER

Page Size (words):

64

Parallel or Serial:

PARALLEL

Power Supplies (V):

5

Programming Voltage (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

3.55 mm

Maximum Standby Current:

.00015 Amp

Sub-Category:

EEPROMs

Maximum Supply Current:

30 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN

Terminal Form:

J BEND

Terminal Pitch:

1.27 mm

Terminal Position:

QUAD

Toggle Bit:

YES

Width:

11.425 mm

Maximum Write Cycle Time (tWC):

5 ms

Trade Compliance

CAT28C256GI15 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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