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CAT24C128HU4IGT3

Onsemi

CAT24C128HU4IGT3 by Onsemi

CAT24C128HU4IGT3 by Onsemi is an EEPROM with 16KX8 organization, 131072 bit memory density, and 1000000 Write/Erase Cycles endurance. It operates in synchronous mode at a clock frequency of 1 MHz via I2C serial bus. Ideal for industrial applications requiring reliable non-volatile memory storage.

Median Price

$0.458

Lifecycle Status

Suppliers In-Stock

14

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 715 parts In-Stock

1+ parts

$0.406

100+ parts

$0.387

1k+ parts

$0.374

10k+ parts

-

715

$0.406

$0.387

$0.374

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DigiKey

USA . 11,000 parts In-Stock

1+ parts

$0.510

100+ parts

$0.449

1k+ parts

$0.416

10k+ parts

-

11,000

$0.510

$0.449

$0.416

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Mouser Electronics

USA . 5,874 parts In-Stock

1+ parts

$0.520

100+ parts

$0.452

1k+ parts

$0.416

10k+ parts

-

5,874

$0.520

$0.452

$0.416

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Verical

USA . 715 parts In-Stock

1+ parts

-

100+ parts

$0.387

1k+ parts

$0.374

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715

-

$0.387

$0.374

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Chip1Stop

Japan . 4 parts In-Stock

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4

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Digiode

USA . 307 parts In-Stock

1+ parts

$0.507

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-

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307

$0.507

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Nova Conductors

Japan . 70 parts In-Stock

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$0.788

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70

$0.788

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Chip Stock

USA . 146,680 parts In-Stock

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146,680

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Sensible Micro Corp

USA . 69,683 parts In-Stock

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69,683

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NAC Semi

USA . 6,000 parts In-Stock

1+ parts

-

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$0.394

6,000

-

-

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$0.394

IBS Electronics

USA . 6,000 parts In-Stock

1+ parts

-

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$0.291

6,000

-

-

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$0.291

Vyrian

USA . 5,958 parts In-Stock

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5,958

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Prism Electronics

USA . 426 parts In-Stock

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426

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Semi Source

USA . 13 parts In-Stock

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13

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Distributors (Availability)

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Semicontronic

India . 6,108 parts In-Stock

1+ parts

$0.373

100+ parts

$0.364

1k+ parts

$0.362

10k+ parts

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6,108

$0.373

$0.364

$0.362

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Ampacity Inc.

Singapore . 6,078 parts In-Stock

1+ parts

$0.373

100+ parts

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6,078

$0.373

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Corphita

USA . 1,832 parts In-Stock

1+ parts

$0.481

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1,832

$0.481

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Argo Parts USA

USA . 4,913 parts In-Stock

1+ parts

$0.786

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4,913

$0.786

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Continental Prestige Electronics

USA . 1,240 parts In-Stock

1+ parts

$0.786

100+ parts

-

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$0.770

1,240

$0.786

-

-

$0.770

Netroflash

USA . 50 parts In-Stock

1+ parts

$0.788

100+ parts

-

1k+ parts

$0.749

10k+ parts

$0.733

50

$0.788

-

$0.749

$0.733

Corohmni

South Africa . 107 parts In-Stock

1+ parts

$2.687

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107

$2.687

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Aztec Data Supply Inc.

USA . 344 parts In-Stock

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$4.700

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344

$4.700

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Advanced Electronics

New Zealand . 500 parts In-Stock

1+ parts

$6.386

100+ parts

$5.811

1k+ parts

$5.237

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500

$6.386

$5.811

$5.237

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Perfect Parts

USA . 59,596 parts In-Stock

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Kepictronics

USA . 18,361 parts In-Stock

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Kulean Microsystems

USA . 8,032 parts In-Stock

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A-Z Elektronik GmbH

Germany . 7,521 parts In-Stock

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7,521

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SupplyDigital Components

Austria . 6,809 parts In-Stock

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Alle Elektronik GmbH

Germany . 5,014 parts In-Stock

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Lixinc

USA . 4,104 parts In-Stock

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GreenTree Electronics

Israel . 1,760 parts In-Stock

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1,760

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Assy Fe

Spain . 1,000 parts In-Stock

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TANS Electronics

Latvia . 664 parts In-Stock

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664

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Problanco Electronics

Mexico . 513 parts In-Stock

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513

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UHIMA Technologies

Türkiye . 249 parts In-Stock

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249

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Overview

Unlock the power of reliable data storage with the CAT24C128HU4IGT3 by Onsemi. As a leading manufacturer in the industry, Onsemi guarantees top-notch quality and performance in every product they create. The CAT24C128HU4IGT3 is an EEPROM that offers endless possibilities in applications such as automotive, industrial, and consumer electronics. With a high endurance of 1,000,000 write/erase cycles and a wide temperature range, this memory IC provides unmatched value and benefits to customers looking for dependable data storage solutions. Choose Onsemi for cutting-edge technology and superior reliability.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection to the product, making it suitable for a variety of environments.

Nominal Supply Voltage / Vsup (V): 3.3

Operating at a standard voltage of 3.3V ensures compatibility with many existing systems and reduces the need for additional power regulation.

No. of Terminals: 8

Having a smaller number of terminals simplifies the installation process and reduces the risk of connection errors.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature, this product can withstand harsh conditions and maintain performance under stress.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, contributing to the efficiency and reliability of the product.

Memory IC Type: EEPROM

Being an EEPROM allows for non-volatile data storage, enabling the product to retain information even when power is removed.

Technical Specifications

EEPROM CAT24C128HU4IGT3 attributes and parameters. Explore more EEPROM devices from Onsemi

Specs

Additional Features:

5MICROAMP STANDBY CURRENT AVAILABLE @ 125 TEMP, AND OPERATES WITH 1.8VMIN SUPPLY @ 0.1MHZ

Alternate Memory Width:

1

Maximum Clock Frequency (fCLK):

1 MHz

Minimum Data Retention Time:

100

Endurance:

1000000 Write/Erase Cycles

JESD-30 Code:

R-PDSO-N8

JESD-609 Code:

e4

Length:

3 mm

Memory Density:

131072 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Terminals:

8

No. of Words:

16384 words

No. of Words Code:

16K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

16KX8

Output Characteristics:

OPEN-DRAIN

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SOLCC8,.12,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

260

Power Supplies (V):

2/5

Programming Voltage (V):

3.3

Qualification:

Not Qualified

Maximum Seated Height:

.55 mm

Serial Bus Type:

I2C

Maximum Standby Current:

.000002 Amp

Sub-Category:

EEPROMs

Maximum Supply Current:

3 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

2.5 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

NO LEAD

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

2 mm

Maximum Write Cycle Time (tWC):

5 ms

Write Protection:

HARDWARE

Trade Compliance

CAT24C128HU4IGT3 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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