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BZX84C6V2ET1

Onsemi

BZX84C6V2ET1 by Onsemi

BZX84C6V2ET1 by Onsemi is a Zener diode with a 6.2V nominal reference voltage and 150 ohm max knee impedance. It operates in temperatures ranging from -65 to 150 °C and has a max power dissipation of 0.25W. Ideal for applications requiring precise voltage regulation in compact electronic devices.

Median Price

$0.032

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 233,555 parts In-Stock

1+ parts

-

100+ parts

$0.030

1k+ parts

$0.025

10k+ parts

$0.023

233,555

-

$0.030

$0.025

$0.023

Verical

USA . 225,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

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$0.032

225,000

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-

-

$0.032

Master Electronics

USA . 9,000 parts In-Stock

1+ parts

-

100+ parts

$1.690

1k+ parts

$1.380

10k+ parts

-

9,000

-

$1.690

$1.380

-

Distributors (In-Stock)

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Digiode

USA . 195 parts In-Stock

1+ parts

$0.024

100+ parts

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195

$0.024

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Vyrian

USA . 4,686 parts In-Stock

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4,686

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Distributors (Availability)

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Corphita

USA . 894 parts In-Stock

1+ parts

$0.022

100+ parts

-

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894

$0.022

-

-

-

Advanced Electronics

New Zealand . 100 parts In-Stock

1+ parts

$0.112

100+ parts

$0.102

1k+ parts

$0.092

10k+ parts

-

100

$0.112

$0.102

$0.092

-

Corohmni

South Africa . 27 parts In-Stock

1+ parts

$0.127

100+ parts

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27

$0.127

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AZTECH Wire

Italy . 1,172 parts In-Stock

1+ parts

$11.820

100+ parts

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1,172

$11.820

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Continental Prestige Electronics

USA . 233,555 parts In-Stock

1+ parts

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$0.021

233,555

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$0.021

TANS Electronics

Latvia . 5,762 parts In-Stock

1+ parts

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5,762

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Kulean Microsystems

USA . 5,497 parts In-Stock

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5,497

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Problanco Electronics

Mexico . 4,129 parts In-Stock

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4,129

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Northwest PG Solutions

USA . 1,999 parts In-Stock

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1,999

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UHIMA Technologies

Türkiye . 527 parts In-Stock

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527

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SupplyDigital Components

Austria . 521 parts In-Stock

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521

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Native Components

USA . 482 parts In-Stock

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482

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Overview

Discover the reliable and high-quality BZX84C6V2ET1 Zener Diode by Onsemi, designed to meet your electronic component needs with precision and efficiency. Onsemi, a trusted manufacturer in the industry, ensures top-notch performance and durability in every product. This Zener Diode's applications are endless, from voltage regulation to signal conditioning. With its compact size and excellent thermal characteristics, the BZX84C6V2ET1 offers customers exceptional value, reliability, and peace of mind for all their circuit design requirements. Trust Onsemi to provide the best solutions for your electronic projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides durability and thermal resistance, making the Zener diode suitable for various operating conditions.

Working Test Current: 5 mA

The low working test current of 5 mA ensures energy efficiency and helps in reducing power consumption.

Surface Mount: YES

The surface mount capability makes it easy to integrate the Zener diode into compact electronic devices or circuit boards.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this Zener diode can withstand high-temperature environments without compromising performance.

Nominal Reference Voltage: 6.2 V

The 6.2V nominal reference voltage ensures precise voltage regulation, making it ideal for applications requiring stable voltage output.

Technical Specifications

Zener Diodes BZX84C6V2ET1 attributes and parameters. Explore more Zener Diodes devices from Onsemi

Specs

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

10 ohm

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e0

Maximum Knee Impedance:

150 ohm

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.25 W

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Nominal Reference Voltage:

6.2 V

Sub-Category:

Voltage Reference Diodes

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Maximum Voltage Tolerance:

6.45 %

Working Test Current:

5 mA

Trade Compliance

BZX84C6V2ET1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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