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BZX84C12LT3G

Onsemi

BZX84C12LT3G by Onsemi

BZX84C12LT3G by Onsemi is a Zener diode with a nominal reference voltage of 12V and max power dissipation of 0.225W. It operates at a max temperature of 150 °C, has a working test current of 5mA, and features gull wing terminal form. This diode is commonly used in applications requiring precise voltage regulation in compact electronic circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 4,157 parts In-Stock

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Digiode

USA . 1,725 parts In-Stock

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Distributors (Availability)

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Native Components

USA . 642 parts In-Stock

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$0.978

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642

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Northwest PG Solutions

USA . 2,234 parts In-Stock

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$1.076

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$1.076

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AZTECH Wire

Italy . 516 parts In-Stock

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$22.070

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516

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Kulean Microsystems

USA . 6,318 parts In-Stock

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Problanco Electronics

Mexico . 4,844 parts In-Stock

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TANS Electronics

Latvia . 4,769 parts In-Stock

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SupplyDigital Components

Austria . 3,300 parts In-Stock

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Corphita

USA . 1,975 parts In-Stock

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Corohmni

South Africa . 416 parts In-Stock

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UHIMA Technologies

Türkiye . 154 parts In-Stock

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Overview

Discover the reliable and high-quality BZX84C12LT3G Zener Diode by Onsemi, a leading manufacturer in the industry. This versatile component is perfect for a wide range of applications, offering customers a valuable solution with its excellent performance and durability. Whether you're looking to regulate voltage or protect your circuits, this Zener diode delivers consistent results and peace of mind. Trust in Onsemi's expertise and choose the BZX84C12LT3G for all your electronic needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the zener diode lightweight and durable, making it suitable for a wide range of applications.

Working Test Current: 5 mA

The low working test current of 5 mA indicates that the zener diode can function efficiently in low power applications, conserving energy.

Surface Mount: YES

Being surface mountable, the zener diode can be easily installed on the surface of a PCB, saving space and simplifying the manufacturing process.

Maximum Voltage Tolerance: 5.39 %

The tight maximum voltage tolerance of 5.39% ensures reliable and consistent performance in regulating voltage within this range.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature of 150 °C, the zener diode can withstand elevated temperatures without compromising its functionality.

Maximum Dynamic Impedance: 25 ohm

The low maximum dynamic impedance of 25 ohms indicates that the zener diode offers stable and efficient voltage regulation characteristics.

Maximum Power Dissipation: 0.225 W

The zener diode can dissipate up to 0.225 watts of power, making it suitable for applications where power dissipation is a critical factor.

Nominal Reference Voltage: 12 V

The zener diode has a nominal reference voltage of 12 volts, making it ideal for applications requiring precise voltage regulation at this level.

Technical Specifications

Zener Diodes BZX84C12LT3G attributes and parameters. Explore more Zener Diodes devices from Onsemi

Specs

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

25 ohm

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.225 W

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Nominal Reference Voltage:

12 V

Sub-Category:

Voltage Reference Diodes

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Maximum Voltage Tolerance:

5.39 %

Working Test Current:

5 mA

Trade Compliance

BZX84C12LT3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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