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BZX79C10

Onsemi

BZX79C10 by Onsemi

BZX79C10 by Onsemi is a Zener diode with a nominal reference voltage of 10V, max power dissipation of 0.5W, and working test current of 5mA. It is commonly used in applications requiring precise voltage regulation such as power supplies and voltage references due to its unidirectional polarity and low dynamic impedance.

Median Price

$0.040

Lifecycle Status

Suppliers In-Stock

51

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 22,235 parts In-Stock

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Arrow

USA . 25,955 parts In-Stock

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Distrelec

Netherlands . 1,866 parts In-Stock

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Mouser Electronics

USA . 53,690 parts In-Stock

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Rochester

USA . 700,000 parts In-Stock

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Verical

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Master Electronics

USA . 25,000 parts In-Stock

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DigiKey

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Element14

Singapore . 9,471 parts In-Stock

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Farnell

UK . 9,291 parts In-Stock

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RS (Exports)

UK . 6,500 parts In-Stock

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Chip1Stop

Japan . 2,234 parts In-Stock

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Bürklin Elektronik

Germany . 1,961 parts In-Stock

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Distributors (In-Stock)

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Digiode

USA . 3,295 parts In-Stock

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Nova Conductors

Japan . 581 parts In-Stock

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TME

Poland . 4,699 parts In-Stock

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American Microsemiconductor Inc.

USA . 19 parts In-Stock

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NAC Semi

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Corel Iberica Componentes, S.L.

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Component Sense

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PC Components Company LLC

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LIBRA Elektronik GmbH

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Bristol Electronics

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SOS electronic

Slovakia . 350 parts In-Stock

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Whistler Technology

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Semicontronic

India . 69,700 parts In-Stock

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Corphita

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Corohmni

South Africa . 238 parts In-Stock

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Aztec Data Supply Inc.

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Ampacity Inc.

Singapore . 139,496 parts In-Stock

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AZTECH Wire

Italy . 11,501 parts In-Stock

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Continental Prestige Electronics

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Argo Parts USA

USA . 8,738 parts In-Stock

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Netroflash

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IDEA Electronic Components Group

UK . 230 parts In-Stock

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MKK Technologies

India . 1,959 parts In-Stock

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DigiPath Technology Company

USA . 1,959 parts In-Stock

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Andel Nordic

Denmark . 782 parts In-Stock

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Metaverse IC Inc.

Canada . 66,818 parts In-Stock

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Perfect Parts

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QUARKTWIN TECHNOLOGY LTD

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Assy Fe

Spain . 22,398 parts In-Stock

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Authorized Procurement Solutions

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Cyclops Electronics Ltd (Excess)

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GreenTree Electronics

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Mexico . 3,762 parts In-Stock

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Parana Technologies

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Overview

Experience the superior quality and reliability of Onsemi's BZX79C10 Zener Diode. With a precision-crafted package body made of glass, this single-config diode offers unmatched performance in a wide range of applications. From voltage regulation to signal conditioning, this Zener diode guarantees optimal functionality with a maximum voltage tolerance of 5%. Trust in Onsemi's innovative technology and unwavering commitment to excellence for all your electronic design needs. Unlock new possibilities and elevate your projects with the unparalleled value and benefits that the BZX79C10 Zener Diode brings to the table.

Feature Benefit Bullets

Package Body Material: GLASS

Glass package provides excellent protection for the diode and allows for high temperature operation, making this product durable and reliable.

Working Test Current: 5 mA

A low working test current of 5 mA ensures efficient performance and reliable operation of the diode in various applications.

Maximum Voltage Tolerance: 5 %

A maximum voltage tolerance of 5% ensures precise voltage regulation and stability, making this diode suitable for critical applications.

Maximum Operating Temperature: 200 °C

With a maximum operating temperature of 200°C, this diode can withstand high temperature environments, providing reliable performance in challenging conditions.

Nominal Reference Voltage: 10 V

The 10V nominal reference voltage allows for precise voltage regulation and control, making this diode ideal for applications that require a stable voltage output.

Technical Specifications

Zener Diodes BZX79C10 attributes and parameters. Explore more Zener Diodes devices from Onsemi

Specs

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

20 ohm

JEDEC-95 Code:

DO-35

JESD-30 Code:

O-LALF-W2

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

200 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

GLASS

Package Shape:

Package Style (Meter):

LONG FORM

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.5 W

Qualification:

Not Qualified

Nominal Reference Voltage:

10 V

Sub-Category:

Voltage Reference Diodes

Surface Mount:

NO

Technology:

ZENER

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Maximum Voltage Tolerance:

5 %

Working Test Current:

5 mA

Trade Compliance

BZX79C10 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

NSN

1336-01-251-3587, 1336012513587, 5961-01-257-3587, 5961012573587, 5961-13-111-3382, 5961131113382, 5961-66-062-3415, 5961660623415, 5961-99-751-5350, 5961997515350, 5961-99-728-3845, 5961997283845, 5961-99-777-6178, 5961997776178

NIIN

012513587, 012573587, 131113382, 660623415, 997515350, 997283845, 997776178

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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