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BZX79C5V1

Onsemi

BZX79C5V1 by Onsemi

BZX79C5V1 by Onsemi is a Zener diode with a 5.1V nominal reference voltage and 5% max voltage tolerance. It operates in temperatures ranging from -65 to 200°C, with a max power dissipation of 0.5W. Ideal for applications requiring precise voltage regulation in electronic circuits.

Median Price

$0.051

Lifecycle Status

Suppliers In-Stock

52

In-Stock Inventory

1k+

Distributors (Authorized)

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Adafruit Industries

USA . 100 parts In-Stock

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$0.051

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$0.051

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Newark

USA . 9,954 parts In-Stock

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$0.155

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$0.038

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$0.029

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Mouser Electronics

USA . 14,956 parts In-Stock

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$0.210

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$0.079

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Rochester

USA . 202,958 parts In-Stock

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DigiKey

USA . 181,558 parts In-Stock

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Verical

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Master Electronics

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Farnell

UK . 24,285 parts In-Stock

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Arrow

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Element14

Singapore . 14,284 parts In-Stock

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Distrelec

Netherlands . 550 parts In-Stock

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Chip1Stop

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Digiode

USA . 10,703 parts In-Stock

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Nova Conductors

Japan . 693 parts In-Stock

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Bristol Electronics

USA . 5,000 parts In-Stock

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Component Electronics Inc.

Canada . 11,000 parts In-Stock

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TME

Poland . 3,662 parts In-Stock

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Forefront Electronics and Design

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NAC Semi

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Atlantic Semiconductor

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Rebound Electronics

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LWI Electronics Inc

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Fibra_Brandt Electronic GMBH

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Whistler Technology

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LittleDiode

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Ampacity Inc.

Singapore . 48,978 parts In-Stock

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Semicontronic

India . 48,974 parts In-Stock

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Corphita

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AZTECH Wire

Italy . 13,853 parts In-Stock

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Aranea Global

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Argo Parts USA

USA . 9,070 parts In-Stock

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Netroflash

USA . 2,100 parts In-Stock

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Advanced Electronics

New Zealand . 100 parts In-Stock

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Aztec Data Supply Inc.

USA . 9,415 parts In-Stock

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IDEA Electronic Components Group

UK . 260 parts In-Stock

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Corohmni

South Africa . 312 parts In-Stock

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MKK Technologies

India . 2,100 parts In-Stock

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DigiPath Technology Company

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Continental Prestige Electronics

USA . 83,247 parts In-Stock

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Formix International (Excess)

India . 57,602 parts In-Stock

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UK . 51,770 parts In-Stock

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Component Stockers USA

USA . 18,121 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

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Lixinc

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Perfect Parts

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Brazil . 500 parts In-Stock

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Giza Technologies, Inc.

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Overview

Discover the reliability and precision of the BZX79C5V1 Zener Diode by Onsemi. As a leading manufacturer in the industry, Onsemi ensures top-notch quality and performance in each product. Ideal for voltage regulation and protection applications, this Zener Diode offers customers unmatched value with its stable reference voltage, low dynamic impedance, and wide operating temperature range. Trust in Onsemi to deliver superior products that meet your needs and exceed your expectations. Elevate your electronics projects with the BZX79C5V1 Zener Diode today!

Feature Benefit Bullets

Package Body Material: GLASS

The glass material provides durability and stability to the diode, making it a reliable choice for various applications.

Config: SINGLE

The single configuration simplifies the circuit design and installation process, making it convenient for users.

Working Test Current: 5 mA

With a working test current of 5 mA, this diode ensures efficient performance and reliability in electronic circuits.

Package Shape: ROUND

The round shape of the package allows for easy mounting and integration into different circuit designs.

No. of Terminals: 2

With 2 terminals, this Zener diode offers straightforward connectivity and installation in circuits.

Package Style (Meter): LONG FORM

The long-form package style enhances the diode's heat dissipation ability, ensuring stable performance under various conditions.

Maximum Voltage Tolerance: 5%

The 5% voltage tolerance ensures consistent and accurate voltage regulation in circuits, making it a dependable choice.

Maximum Operating Temperature: 200 °C

With a maximum operating temperature of 200°C, this diode can withstand high temperatures, making it suitable for industrial applications.

Maximum Dynamic Impedance: 60 ohm

The low dynamic impedance of 60 ohms ensures efficient current flow and voltage regulation in electronic circuits.

Minimum Operating Temperature: -65 °C

The diode's minimum operating temperature of -65°C allows for reliable performance in low-temperature environments.

Terminal Finish: Matte Tin (Sn) - annealed

The matte tin finish provides corrosion resistance and ensures secure connections in the circuit.

Terminal Position: AXIAL

The axial terminal position simplifies the diode's installation and ensures proper alignment in the circuit.

Case Connection: ISOLATED

The isolated case connection prevents interference and ensures stable performance in the circuit.

Maximum Power Dissipation: 0.5 W

With a maximum power dissipation of 0.5 W, this diode can handle high power levels without compromising its functionality.

Diode Type: ZENER DIODE

As a Zener diode, this product is specifically designed for voltage regulation and protection in various electronic circuits.

Nominal Reference Voltage: 5.1 V

The nominal reference voltage of 5.1 V ensures accurate voltage regulation and stability in the circuit.

Technology: ZENER

Utilizing Zener technology, this diode offers precise voltage regulation and protection features for electronic circuits.

Terminal Form: WIRE

The wire terminal form provides flexibility and ease of connection in different circuit layouts.

Polarity: UNIDIRECTIONAL

The unidirectional polarity ensures consistent voltage regulation and protection in one direction.

Diode Element Material: SILICON

Made from silicon, this diode element material offers high efficiency and reliability in voltage regulation applications.

Technical Specifications

Zener Diodes BZX79C5V1 attributes and parameters. Explore more Zener Diodes devices from Onsemi

Specs

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

60 ohm

JEDEC-95 Code:

DO-35

JESD-30 Code:

O-LALF-W2

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

200 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

GLASS

Package Shape:

Package Style (Meter):

LONG FORM

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.5 W

Qualification:

Not Qualified

Nominal Reference Voltage:

5.1 V

Sub-Category:

Voltage Reference Diodes

Surface Mount:

NO

Technology:

ZENER

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Maximum Voltage Tolerance:

5 %

Working Test Current:

5 mA

Trade Compliance

BZX79C5V1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

NSN

5961-01-089-2142, 5961010892142, 5961-13-111-3386, 5961131113386, 5961-15-009-4687, 5961150094687, 5961-99-775-7844, 5961997757844, 5985-01-089-2442, 5985010892442

NIIN

010892142, 131113386, 150094687, 997757844, 010892442

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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