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BF241

Onsemi

BF241 by Onsemi

BF241 by Onsemi is a NPN BJT with 3 terminals, max power dissipation of 0.35W, and hFE of 35. Ideal for applications requiring low collector-emitter voltage (40V), such as amplifiers or signal processing circuits due to its high transition frequency of 400MHz.

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Lifecycle Status

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1k+

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Pegasus Components GmbH

Germany . 4,800 parts In-Stock

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Digiode

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Anansix

USA . 2,929 parts In-Stock

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Digital Electronic Gebert Verwaltungs UG

Germany . 1,520 parts In-Stock

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Fibra_Brandt Electronic GMBH

Germany . 1,416 parts In-Stock

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Halfin

Belgium . 1,344 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 1,172 parts In-Stock

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Corel Iberica Componentes, S.L.

Spain . 741 parts In-Stock

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LittleDiode

UK . 410 parts In-Stock

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ECAB

Sweden . 390 parts In-Stock

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ComSIT Distribution GmbH

Germany . 386 parts In-Stock

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Vyrian

USA . 289 parts In-Stock

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Huijzer Components

Netherlands . 149 parts In-Stock

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Goldney Electronics S.L.

Spain . 90 parts In-Stock

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ABC Electronics Ltd.

UK . 57 parts In-Stock

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GES GmbH

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Modulus Dynamics

Lithuania . 13,866 parts In-Stock

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$0.447

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$0.429

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$0.411

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One Stop Electronics

USA . 310 parts In-Stock

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$65.050

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Problanco Electronics

Mexico . 8,310 parts In-Stock

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UNI Independent Distributors

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Northwest PG Solutions

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TANS Electronics

Latvia . 5,101 parts In-Stock

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SupplyDigital Components

Austria . 5,048 parts In-Stock

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Corphita

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Perfect Parts

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Kulean Microsystems

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Cyclops Electronics Ltd (Excess)

UK . 1,668 parts In-Stock

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Native Components

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Assy Fe

Spain . 980 parts In-Stock

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Corohmni

South Africa . 124 parts In-Stock

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UHIMA Technologies

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Overview

Enhance your electronic projects with the Onsemi BF241 Small Signal Bipolar Junction Transistor. Manufactured by Onsemi, known for their high-quality components, this NPN transistor is perfect for amplification and switching applications. With a maximum operating temperature of 150 °C and a minimum DC current gain of 35, this transistor offers reliable performance and efficiency. Upgrade your circuits today with the value and benefits that the BF241 provides, and experience the advantages of using top-notch components from a trusted manufacturer like Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, making this product versatile.

Configuration: SINGLE

SINGLE configuration simplifies circuit design and layout, making it easier to integrate into various applications.

Package Shape: ROUND

ROUND shape allows for easy mounting and installation in circular layouts or tight spaces.

Maximum Power Dissipation (Abs): 0.35 W

High power dissipation capability ensures reliable performance under demanding conditions.

Minimum DC Current Gain (hFE): 35

Minimum DC current gain of 35 provides consistent and stable amplification in circuits.

Maximum Collector-Emitter Voltage: 40 V

High collector-emitter voltage rating allows for use in a wide range of voltage applications.

Maximum Collector Current (IC): 0.025 A

Sufficient collector current rating for low-power applications and circuits.

Nominal Transition Frequency (fT): 400 MHz

High transition frequency enables the transistor to operate efficiently in high-frequency circuits.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BF241 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

35

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BF241 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

4320-21-798-1578, 4320217981578, 5330-66-086-7210, 5330660867210

NIIN

217981578, 660867210

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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