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BC847S

Onsemi

BC847S by Onsemi

BC847S by Onsemi is a NPN BJT with 2 elements, ideal for amplifier applications. Features include hFE of 110, VCE of 45V, and fT of 200MHz. Its GULL WING terminals and small outline package make it suitable for surface mount designs.

Median Price

$0.120

Lifecycle Status

Suppliers In-Stock

28

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1k+

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Mouser Electronics

USA . 8,521 parts In-Stock

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$0.073

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Rochester

USA . 76,203 parts In-Stock

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$0.130

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DigiKey

USA . 76,203 parts In-Stock

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Farnell

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Verical

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Master Electronics

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Arrow

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Chip1Stop

Japan . 3,000 parts In-Stock

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Element14

Singapore . 2,783 parts In-Stock

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Distributors (In-Stock)

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Digiode

USA . 1,390 parts In-Stock

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Nova Conductors

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TME

Poland . 5,668 parts In-Stock

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DComponents

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Area51 Electronics

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Chip Stock

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ComSIT Distribution GmbH

Germany . 87,743 parts In-Stock

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ComSIT USA

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LIBRA Elektronik GmbH

Germany . 55,244 parts In-Stock

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Vyrian

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Rutronik

Germany . 24,000 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 21,000 parts In-Stock

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Electro Sonic

Canada . 9,000 parts In-Stock

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IBS Electronics

USA . 9,000 parts In-Stock

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Ack Elektronik San.Tic.Ltd.Sti

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Velocity Electronics

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Odintec Ltd.

Israel . 200 parts In-Stock

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Sogenti Electronics

Canada . 180 parts In-Stock

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Prism Electronics

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Semicontronic

India . 30,470 parts In-Stock

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Corohmni

South Africa . 72 parts In-Stock

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Modulus Dynamics

Lithuania . 1,778 parts In-Stock

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Corphita

USA . 2,627 parts In-Stock

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Argo Parts USA

USA . 3,679 parts In-Stock

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Component Stockers USA

USA . 10,646 parts In-Stock

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Andel Nordic

Denmark . 3,303 parts In-Stock

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$0.657

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Aztec Data Supply Inc.

USA . 70 parts In-Stock

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Perfect Parts

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Continental Prestige Electronics

USA . 82,203 parts In-Stock

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Kepictronics

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QUARKTWIN TECHNOLOGY LTD

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CPlus Electronics

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Problanco Electronics

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SupplyDigital Components

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Kulean Microsystems

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Glotronic Ltd.

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Authorized Procurement Solutions

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Infinite Electronics LLP (Excess)

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Supply Digital

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TANS Electronics

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Netroflash

USA . 500 parts In-Stock

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UHIMA Technologies

Türkiye . 275 parts In-Stock

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Overview

Discover the BC847S by Onsemi, a high-quality NPN small signal BJT that offers exceptional performance and reliability. Manufactured by Onsemi, a trusted industry leader, this transistor is designed for amplifier applications with a maximum operating temperature of 150°C and a nominal transition frequency of 200 MHz. With a compact package style and Gull Wing terminal form, the BC847S is perfect for surface mount applications. Experience the benefits of this versatile component, including a minimum DC current gain of 110 and a maximum collector-emitter voltage of 45V. Upgrade your electronic projects with the BC847S and unlock endless possibilities in circuit design.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the components inside, ensuring a longer lifespan for the transistor.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits and are versatile for a variety of applications.

Maximum Power Dissipation: 0.3 W

With a high maximum power dissipation, this transistor can handle higher power levels without overheating, making it suitable for demanding applications.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature allows for reliable performance even in environments with elevated temperatures.

Maximum Collector-Emitter Voltage: 45 V

This high voltage rating allows for the transistor to be used in a wide range of circuits without the risk of damage from voltage spikes.

Nominal Transition Frequency: 200 MHz

The high nominal transition frequency indicates that this transistor can operate at high frequencies, making it suitable for applications requiring fast switching speeds.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC847S attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

45 V

Configuration:

Minimum DC Current Gain (hFE):

110

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BC847S Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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