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ADP3121JCPZ-RL

Onsemi

ADP3121JCPZ-RL by Onsemi

ADP3121JCPZ-RL by Onsemi is a MOSFET gate driver with a supply voltage range of 4.15V to 13.2V, suitable for high-side driving applications. It features a small outline package style, dual terminals, and operates b/w 0 °C to 85°C. Ideal for half-bridge based MOSFET driver interfaces in compact designs.

Median Price

$0.326

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip1Stop

Japan . 2,690 parts In-Stock

1+ parts

$1.820

100+ parts

$0.787

1k+ parts

$0.681

10k+ parts

-

2,690

$1.820

$0.787

$0.681

-

Rochester

USA . 137,367 parts In-Stock

1+ parts

-

100+ parts

$0.291

1k+ parts

$0.241

10k+ parts

$0.215

137,367

-

$0.291

$0.241

$0.215

DigiKey

USA . 137,367 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.360

10k+ parts

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137,367

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-

$0.360

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Verical

USA . 75,000 parts In-Stock

1+ parts

-

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$0.269

75,000

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-

-

$0.269

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,425 parts In-Stock

1+ parts

$0.226

100+ parts

-

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1,425

$0.226

-

-

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Bristol Electronics

USA . 6,941 parts In-Stock

1+ parts

$0.750

100+ parts

$0.278

1k+ parts

$0.195

10k+ parts

-

6,941

$0.750

$0.278

$0.195

-

Chip Stock

USA . 70,000 parts In-Stock

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70,000

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Vyrian

USA . 7,235 parts In-Stock

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7,235

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Dan-Mar Components

USA . 6,941 parts In-Stock

1+ parts

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6,941

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 96,461 parts In-Stock

1+ parts

$0.202

100+ parts

-

1k+ parts

-

10k+ parts

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96,461

$0.202

-

-

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Corphita

USA . 1,586 parts In-Stock

1+ parts

$0.214

100+ parts

-

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1,586

$0.214

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-

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Corohmni

South Africa . 402 parts In-Stock

1+ parts

$0.238

100+ parts

-

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402

$0.238

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AZTECH Wire

Italy . 415 parts In-Stock

1+ parts

$12.610

100+ parts

-

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415

$12.610

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Continental Prestige Electronics

USA . 137,367 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

$0.241

10k+ parts

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137,367

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-

$0.241

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Perfect Parts

USA . 27,078 parts In-Stock

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27,078

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TANS Electronics

Latvia . 7,851 parts In-Stock

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7,851

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Kepictronics

USA . 5,500 parts In-Stock

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5,500

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SupplyDigital Components

Austria . 5,471 parts In-Stock

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5,471

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Problanco Electronics

Mexico . 5,352 parts In-Stock

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5,352

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S.R.D Solutions

India . 5,229 parts In-Stock

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5,229

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Authorized Procurement Solutions

USA . 2,690 parts In-Stock

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2,690

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A-Z Elektronik GmbH

Germany . 2,259 parts In-Stock

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2,259

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Alle Elektronik GmbH

Germany . 1,506 parts In-Stock

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1,506

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Native Components

USA . 776 parts In-Stock

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$4.598

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776

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$4.598

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Kulean Microsystems

USA . 731 parts In-Stock

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731

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UHIMA Technologies

Türkiye . 645 parts In-Stock

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645

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Microchip USA

USA . 273 parts In-Stock

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273

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Northwest PG Solutions

USA . 238 parts In-Stock

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$4.645

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238

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$4.645

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Overview

Unlock the power of your electronic devices with the ADP3121JCPZ-RL MOSFET Gate Driver by Onsemi. Known for their superior quality and reliability, Onsemi delivers cutting-edge solutions for a wide range of applications. This small outline, heat sink package offers customers the advantage of high side driving, a wide supply voltage range, and dual terminal position for increased flexibility. Trust Onsemi to provide you with the value, benefits, and advantages you need to take your projects to the next level. Experience innovation at its best with the ADP3121JCPZ-RL.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides good thermal and electrical insulation, making it suitable for high-power applications.

Surface Mount: YES

Surface mount technology allows for easy and efficient PCB assembly, saving time and cost.

Maximum Supply Voltage: 13.2 V

Can handle high supply voltages, offering flexibility in power supply options.

Package Shape: SQUARE

Square shape allows for compact and efficient PCB layout, saving space in the overall system design.

No. of Terminals: 8

Sufficient number of terminals for connecting and controlling multiple components in a circuit.

Minimum Supply Voltage: 4.15 V

Can operate at low supply voltages, suitable for battery-powered applications.

Maximum Operating Temperature: 85 °C

Can withstand high operating temperatures, ensuring reliability in harsh environments.

Minimum Operating Temperature: 0 °C

Operates at low temperatures, making it suitable for a wide range of operating conditions.

Terminal Finish: TIN

Tin finish provides good solderability and corrosion resistance for a reliable connection.

Maximum Seated Height: 0.9 mm

Low profile design for space-constrained applications.

Width: 3 mm

Compact width for efficient PCB layout and space-saving designs.

High Side Driver: YES

Includes a high side driver for versatile switching applications.

Peak Reflow Temperature °C: 260

Can withstand high-temperature reflow soldering processes for reliable manufacturing.

Length: 3 mm

Compact length for space-saving designs.

Terminal Form: NO LEAD

Lead-free terminal form for environmentally friendly and RoHS compliant applications.

Nominal Supply Voltage: 12 V

Optimal supply voltage for efficient performance and compatibility with common power sources.

Terminal Pitch: 0.5 mm

Fine pitch terminals for precise and reliable connections in compact designs.

Interface IC Type: HALF BRIDGE BASED MOSFET DRIVER

Half bridge based MOSFET driver offers efficient switching performance for power electronics applications.

Technical Specifications

MOSFET Gate Drivers ADP3121JCPZ-RL attributes and parameters. Explore more MOSFET Gate Drivers devices from Onsemi

Specs

High Side Driver:

YES

Interface IC Type:

JESD-30 Code:

S-PDSO-N8

JESD-609 Code:

e3

Length:

3 mm

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Terminals:

8

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

0 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum Seated Height:

.9 mm

Maximum Supply Voltage:

13.2 V

Minimum Supply Voltage:

4.15 V

Nominal Supply Voltage:

12 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

TIN

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Width:

3 mm

Trade Compliance

ADP3121JCPZ-RL Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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