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80SQ045N

Onsemi

80SQ045N by Onsemi

The Onsemi 80SQ045N is a Schottky rectifier diode with a max forward voltage of 0.55V and output current of 8A. It operates b/w -65°C to 125°C, making it suitable for high-efficiency applications. The diode has a max repetitive peak reverse voltage of 45V and non-repetitive peak forward current of 140A, housed in a plastic/epoxy package with matte tin finish.

Median Price

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Lifecycle Status

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5

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1k+

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Vyrian

USA . 5,281 parts In-Stock

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VNN

France . 968 parts In-Stock

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Digiode

USA . 720 parts In-Stock

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Nova Conductors

Japan . 100 parts In-Stock

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Semicontronic

India . 1,399 parts In-Stock

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Ampacity Inc.

Singapore . 535 parts In-Stock

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Advanced Electronics

New Zealand . 270 parts In-Stock

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$0.107

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Aztec Data Supply Inc.

USA . 1,938 parts In-Stock

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AZTECH Wire

Italy . 756 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 11,177 parts In-Stock

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SupplyDigital Components

Austria . 6,532 parts In-Stock

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Continental Prestige Electronics

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Problanco Electronics

Mexico . 4,539 parts In-Stock

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Kulean Microsystems

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Glotronic Ltd.

UK . 2,780 parts In-Stock

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Corphita

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TANS Electronics

Latvia . 1,915 parts In-Stock

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Argo Parts USA

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UHIMA Technologies

Türkiye . 514 parts In-Stock

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Corohmni

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Bastille Electronics

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Overview

Discover the 80SQ045N by Onsemi, a high-quality Schottky rectifier diode that offers unparalleled efficiency and performance. Manufactured by Onsemi, a trusted name in the industry, this diode is perfect for a wide range of applications. With a maximum output current of 8A and a maximum repetitive peak reverse voltage of 45V, this diode ensures reliable operation in any situation. Upgrade your projects with the 80SQ045N and experience the superior quality and value that Onsemi delivers.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material provides durability and protection for the diode, allowing it to withstand different environmental conditions.

Config: SINGLE

Single configuration simplifies the setup and installation of the diode, making it easy to incorporate into various circuits.

Package Shape: ROUND

The round package shape allows for efficient placement and soldering onto circuit boards or other components.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature of 125°C, this diode can function reliably even in high-temperature environments.

Technology: SCHOTTKY

The Schottky technology utilized in this diode ensures low forward voltage drop and fast switching speed, making it ideal for applications requiring high efficiency.

Technical Specifications

Diodes & Rectifiers 80SQ045N attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE, LOW POWER LOSS

Application:

EFFICIENCY

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.55 V

JEDEC-95 Code:

DO-201AD

JESD-30 Code:

O-PALF-W2

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

140 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

8 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

LONG FORM

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

45 V

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

80SQ045N Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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