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80SQ045NRL

Onsemi

80SQ045NRL by Onsemi

80SQ045NRL by Onsemi is a Schottky rectifier diode with a max forward voltage of 0.55V and output current of 8A. It operates at a max temperature of 125°C, making it suitable for high-efficiency applications. The diode has a peak reverse voltage of 45V and non-repetitive peak forward current of 140A, housed in an isolated axial package.

Median Price

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Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

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ComSIT Distribution GmbH

Germany . 11,250 parts In-Stock

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Vyrian

USA . 7,044 parts In-Stock

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VNN

France . 6,369 parts In-Stock

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Digiode

USA . 1,079 parts In-Stock

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Nova Conductors

Japan . 500 parts In-Stock

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500

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 612 parts In-Stock

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$0.010

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612

$0.010

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Semicontronic

India . 254 parts In-Stock

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$0.010

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$0.010

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$0.010

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254

$0.010

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$0.010

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Ampacity Inc.

Singapore . 236 parts In-Stock

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$0.010

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236

$0.010

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Advanced Electronics

New Zealand . 350 parts In-Stock

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$0.181

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$0.172

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$0.172

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350

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AZTECH Wire

Italy . 276 parts In-Stock

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$16.974

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Kulean Microsystems

USA . 6,609 parts In-Stock

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TANS Electronics

Latvia . 5,445 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 5,262 parts In-Stock

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Argo Parts USA

USA . 4,430 parts In-Stock

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SupplyDigital Components

Austria . 3,357 parts In-Stock

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Corphita

USA . 2,074 parts In-Stock

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Glotronic Ltd.

UK . 1,970 parts In-Stock

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Problanco Electronics

Mexico . 1,959 parts In-Stock

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Continental Prestige Electronics

USA . 1,558 parts In-Stock

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UHIMA Technologies

Türkiye . 651 parts In-Stock

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Corohmni

South Africa . 308 parts In-Stock

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Bastille Electronics

Australia . 300 parts In-Stock

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Overview

Unleash the power of efficiency with the 80SQ045NRL diode rectifier by Onsemi. Manufactured with top-quality materials and cutting-edge technology, this product offers unmatched performance and reliability. Ideal for a wide range of applications, this diode rectifier ensures optimal functionality and maximum output current of 8A. Experience seamless operation and enhanced efficiency with Onsemi's 80SQ045NRL - the perfect solution for your electronic needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Ensures durability and protection for the diode, making it suitable for various applications.

Config: SINGLE

Simplified design with single configuration for easy installation and maintenance.

Package Shape: ROUND

Compact and space-saving design for efficient use in different electronic setups.

No. of Terminals: 2

Simplified connection with only two terminals, reducing complexity in wiring.

Package Style (Meter): LONG FORM

Suitable for efficiency applications where long-term performance is crucial.

Application: EFFICIENCY

Specifically designed for efficiency applications, ensuring optimal performance.

Maximum Operating Temperature: 125 °C

Can operate efficiently under high temperature conditions, providing reliability.

Terminal Finish: TIN

Tin terminal finish offers good conductivity and corrosion resistance for long-term use.

Terminal Position: AXIAL

Axial terminal position for easy mounting and connection in various circuit setups.

Case Connection: ISOLATED

Isolated case connection for safety and protection in electrical circuits.

Peak Reflow Temperature °C: 260

High peak reflow temperature ensures secure soldering and longevity of the diode.

Diode Type: RECTIFIER DIODE

Rectifier diode suitable for converting alternating current (AC) to direct current (DC) with minimal voltage drop.

Maximum Forward Voltage (VF): 0.55 V

Low forward voltage drop ensures efficient energy conversion and minimal power loss.

Maximum Output Current: 8 A

Capable of handling high output current for various electrical applications.

Technology: SCHOTTKY

Schottky technology offers fast switching speeds and low forward voltage drop for improved efficiency.

Terminal Form: WIRE

Wire terminal form for easy connection and installation in electronic circuits.

Maximum Repetitive Peak Reverse Voltage: 45 V

Can withstand high reverse voltages, ensuring stable operation in different circuit configurations.

Maximum Non Repetitive Peak Forward Current: 140 A

Capable of handling high peak forward currents for short durations, suitable for power surge protection.

Diode Element Material: SILICON

Silicon diode element material ensures reliable performance and durability in various operating conditions.

Technical Specifications

Diodes & Rectifiers 80SQ045NRL attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE, LOW POWER LOSS

Application:

EFFICIENCY

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.55 V

JEDEC-95 Code:

DO-201AD

JESD-30 Code:

O-PALF-W2

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

140 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

125 Cel

Maximum Output Current:

8 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

LONG FORM

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

45 V

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Trade Compliance

80SQ045NRL Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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